Photo-sensor and method for operating the same
    28.
    发明授权
    Photo-sensor and method for operating the same 失效
    光电传感器及其操作方法

    公开(公告)号:US5196702A

    公开(公告)日:1993-03-23

    申请号:US824857

    申请日:1991-12-11

    IPC分类号: H04N5/32

    CPC分类号: H04N5/32

    摘要: An optically reading type photo-sensor for reading out an information signal of a signal light with a signal reading light includes a first photoconductor (101) and a second photoconductor (102) interposed between two electrodes (104 and 105); an intermediate region (103) disposed between those two photoconductors for storing and recombining carriers; and an optical source (107) for emitting a signal reading light for uninformalizing the potential in said second photoconductor (102), whereby a successive signal reading can be accomplished without any special preparations for the incidence of the signal light. The photo-sensor can be applied to a variety of imaging devices.

    摘要翻译: PCT No.PCT / JP88 / 01073 Sec。 371日期1989年8月21日 102(e)日期1989年8月21日PCT提交1988年10月21日PCT公布。 出版物WO89 / 04063 用于读出具有信号读取光的信号光的信息信号的光学读取型光电传感器包括插入在两个电极(104和105)之间的第一感光体(101)和第二感光体(102) ); 设置在这两个光电导体之间的用于存储和重组载体的中间区域(103) 以及用于发射用于对所述第二光电导体(102)中的电位进行非正规化的信号读取光的光源(107),由此可以在不对信号光的入射进行任何特别准备的情况下实现连续的信号读取。 光电传感器可以应用于各种成像设备。

    Photoconductive films
    29.
    发明授权
    Photoconductive films 失效
    光导膜

    公开(公告)号:US4040985A

    公开(公告)日:1977-08-09

    申请号:US674086

    申请日:1976-04-06

    CPC分类号: H01J29/456 Y10T428/31678

    摘要: A photoconductive film comprises a first region containing Se in which Te and an element capable of forming deep levels in Se are added at concentrations lower than 10 atomic % inclusive on average, respectively, a second region disposed on the first region and containing Se in which Te is added with a continuous distribution of concentration having a peak value greater than 15 atomic % inclusive, a third region disposed on the second region and containing Se in which an element capable of forming deep levels in Se is added with a continuous distribution of concentration having a peak value greater than 15 atomic % inclusive, and a fourth region disposed on the third region and containing Se in which Te and an element capable of forming deep levels in Se are added at concentrations lower than 10 atomic % inclusive on average, respectively.

    摘要翻译: 光电导膜包括含有Se的第一区域,其中Te和能够形成Se的深度水平的元素分别平均加入低于10原子%的平均值,第二区域设置在第一区域上并包含Se,其中 加入具有峰值大于15原子%的浓度的连续分布的浓度,第三区域设置在第二区域上,并且包含Se,其中能够形成Se中的深层次的元素具有连续的浓度分布 具有大于15原子%的峰值的第一区域,以及设置在第三区域上并且含有Se的Se的第四区域,其中Te和Se中能够形成深度水平的元素分别以低于10原子% 。

    Method of manufacturing target of image pickup tube
    30.
    发明授权
    Method of manufacturing target of image pickup tube 失效
    摄像管目标的制造方法

    公开(公告)号:US4331506A

    公开(公告)日:1982-05-25

    申请号:US212213

    申请日:1980-12-02

    IPC分类号: H01J9/233 H01J31/46 H01J31/26

    CPC分类号: H01J31/46 H01J9/233

    摘要: A method of manufacturing a target of an image pickup tube comprising the steps of: forming a plurality of groups of transparent conductive signal electrodes on a transparent insulating base plate; forming a first layer on at least a portion constituting an image area of the image pickup tube, said first layer being substantially insoluble in etching liquid used for etching an insulating layer to constitute an intermediate layer insulator in a double layered interconnection structure; forming, after formation of said first layer, an insulating layer to constitute said intermediate-layer insulator; removing a predetermined portion of said insulating layer, removing said first layer together with said insulating layer located thereon; forming bus bars; and forming a photoconductive layer on said plurality of groups of the transparent conductive signal electrodes.This invention provides an excellent method for mass production.

    摘要翻译: 一种制造图像拾取管的目标的方法,包括以下步骤:在透明绝缘基板上形成多组透明导电信号电极; 在构成图像拾取管的图像区域的至少一部分上形成第一层,所述第一层基本上不溶于用于蚀刻绝缘层的蚀刻液,以构成双层互连结构中的中间层绝缘体; 在形成所述第一层之后形成构成所述中间层绝缘体的绝缘层; 去除所述绝缘层的预定部分,与位于其上的所述绝缘层一起去除所述第一层; 形成母线; 以及在所述多个透明导电信号电极组上形成光电导层。 本发明提供了一种很好的批量生产方法。