公开(公告)号：US08963175B2

公开(公告)日：2015-02-24

申请号：US12266300

申请日：2008-11-06

申请人： Grigory Onushkin ,  Jin Hyun Lee ,  Myong Soo Cho ,  Pun Jae Choi

发明人： Grigory Onushkin ,  Jin Hyun Lee ,  Myong Soo Cho ,  Pun Jae Choi

IPC分类号： H01L33/36 ,  H01L27/15 ,  H01L33/38 ,  H01L33/08 ,  H01L33/20

CPC分类号： H01L27/156 ,  H01L33/08 ,  H01L33/20 ,  H01L33/385

摘要： Provided are a light emitting device and a method of manufacturing the same. The light emitting device includes each of first and second semiconductor stacked structures including first and second conductive type semiconductor layers and an active layer, first and second contacts on tops and bottoms of the first and second semiconductor stacked structures to be connected to the first and second conductive type semiconductor layers, a substrate structure including first and second sides, a first insulation layer on an area where no second contact is formed among a surface of the first and second semiconductor stacked layers, first and second conductive layers connected to the second contacts of the first and second semiconductor stacked structures, first and second wiring layers on the first side of the substrate structure, and first and second external connection terminals connected to the first and second contacts of the first semiconductor stacked structure.

摘要翻译： 提供一种发光器件及其制造方法。 发光器件包括第一和第二半导体层叠结构中的每一个，包括第一和第二导电类型半导体层和有源层，第一和第二半导体堆叠结构的顶部和底部上的第一和第二触点将被连接到第一和第二 导电型半导体层，包括第一和第二侧的衬底结构，在第一和第二半导体层叠层的表面之间不形成第二接触的区域上的第一绝缘层，与第二和第二侧连接的第一和第二导电层 第一和第二半导体层叠结构，在基板结构的第一侧上的第一和第二布线层，以及连接到第一半导体堆叠结构的第一和第二触点的第一和第二外部连接端子。

公开(公告)号：US07704771B2

公开(公告)日：2010-04-27

申请号：US12071544

申请日：2008-02-22

申请人： Grigory Onushkin ,  Jin Hyun Lee ,  Myong Soo Cho ,  Pun Jae Choi

发明人： Grigory Onushkin ,  Jin Hyun Lee ,  Myong Soo Cho ,  Pun Jae Choi

IPC分类号： H01L21/00

CPC分类号： H01L27/156 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light emitting device including: at least one light emitting stack including first and second conductivity type semiconductor layers and an active layer disposed there between, the light emitting stack having first and second surfaces and side surfaces interposed between the first and second surfaces; first and second contacts formed on the first and second surface of the light emitting stack, respectively; a first insulating layer formed on the second surface and the side surfaces of the light emitting stack; a conductive layer connected to the second contact and extended along one of the side surfaces of the light emitting stack to have an extension portion adjacent to the first surface; and a substrate structure formed to surround the side surfaces and the second surface of the light emitting stack.

摘要翻译： 一种发光器件，包括：包括第一和第二导电类型半导体层的至少一个发光堆叠和设置在其间的有源层，所述发光叠层具有插入在所述第一表面和所述第二表面之间的第一表面和第二表面以及侧表面; 分别形成在发光堆叠的第一和第二表面上的第一和第二触点; 形成在所述发光叠层的所述第二表面和所述侧表面上的第一绝缘层; 导电层，其连接到所述第二接触件并沿所述发光叠层的一个侧表面延伸，以具有与所述第一表面相邻的延伸部分; 以及形成为围绕发光叠层的侧表面和第二表面的衬底结构。

公开(公告)号：US07514720B2

公开(公告)日：2009-04-07

申请号：US11442961

申请日：2006-05-31

申请人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Myong Soo Cho

发明人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Myong Soo Cho

IPC分类号： H01L29/201

CPC分类号： H01L25/0756 ,  H01L27/15 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.

摘要翻译： 本发明涉及使用晶片接合或金属接合的单片白光发光器件。 在本发明中，提供导电基座。 第一发光体通过金属层粘合在导电基座上。 在第一光发射器中，从底部到顶部依次层叠p型氮化物半导体层，第一有源层，n型氮化物半导体层和导电性基板。 此外，在导电基板的局部区域上形成第二发光体。 在第二发光体中，从底部到顶部依次层叠p型AlGaInP系半导体层，有源层及n型AlGaInP系半导体层。 另外，在导体基座基板的下侧形成有p电极，在n型AlGaInP系半导体层的上表面形成n电极。

公开(公告)号：US07935974B2

公开(公告)日：2011-05-03

申请号：US12399619

申请日：2009-03-06

申请人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Myong Soo Cho

发明人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Myong Soo Cho

IPC分类号： H01L33/00

CPC分类号： H01L25/0756 ,  H01L27/15 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.

摘要翻译： 本发明涉及使用晶片接合或金属接合的单片白光发光器件。 在本发明中，提供导电基座。 第一发光体通过金属层粘合在导电基座上。 在第一光发射器中，从底部到顶部依次层叠p型氮化物半导体层，第一有源层，n型氮化物半导体层和导电性基板。 此外，在导电基板的局部区域上形成第二发光体。 在第二发光体中，从底部到顶部依次层叠p型AlGaInP系半导体层，有源层及n型AlGaInP系半导体层。 另外，在导体基座基板的下侧形成有p电极，在n型AlGaInP系半导体层的上表面形成n电极。