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公开(公告)号:US20230005843A1
公开(公告)日:2023-01-05
申请号:US17695478
申请日:2022-03-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junghoon Kang
IPC: H01L23/538 , H01L23/31 , H01L23/00 , H01L21/48
Abstract: A method includes attaching a first anisotropic conductive film including first conductive particles to a front surface of a substrate structure; compressing a first redistribution structure on the front surface of the substrate structure such that a first redistribution conductor of the first redistribution structure that is exposed is electrically connected by the first conductive particles to a connection terminal or a vertical connection conductor that is exposed from the substrate structure, attaching a second anisotropic conductive film including second conductive particles to a rear surface of the substrate structure; and compressing a second redistribution structure on the rear surface of the substrate structure such that a second redistribution conductor of the second redistribution structure that is exposed is electrically connected by the second conductive particles to the vertical connection conductor.
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22.
公开(公告)号:US11348807B2
公开(公告)日:2022-05-31
申请号:US16925982
申请日:2020-07-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junghoon Kang
IPC: H01L21/48 , H01L23/538 , H01L25/18 , H01L25/00 , H01L21/683 , H01L23/498
Abstract: A semiconductor package includes an interposer having a separation layer on a rear surface of which a plurality of first recesses is arranged. A plurality of wiring structures is stacked on the separation layer alternately with a plurality of insulation interlayers. A plurality of semiconductor devices is arranged, side by side, on the interposer side and connected to a plurality of the wiring structures. A plurality of contact terminals on the rear surface of the separation layer is connected to the plurality of the wiring structures through the separation layer. A flatness deterioration of the interposer is minimized and the contact surface between the interposer and under fill resin is enlarged.
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23.
公开(公告)号:US20210210360A1
公开(公告)日:2021-07-08
申请号:US16925982
申请日:2020-07-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junghoon Kang
IPC: H01L21/48 , H01L23/538 , H01L21/683 , H01L25/18 , H01L25/00
Abstract: A semiconductor package includes an interposer having a separation layer on a rear surface of which a plurality of first recesses is arranged. A plurality of wiring structures is stacked on the separation layer alternately with a plurality of insulation interlayers. A plurality of semiconductor devices is arranged, side by side, on the interposer side and connected to a plurality of the wiring structures. A plurality of contact terminals on the rear surface of the separation layer is connected to the plurality of the wiring structures through the separation layer. A flatness deterioration of the interposer is minimized and the contact surface between the interposer and under fill resin is enlarged.
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