公开(公告)号：US20200321338A1

公开(公告)日：2020-10-08

申请号：US16905027

申请日：2020-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNGMIN KIM ,  DONGWON KIM

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786 ,  H01L29/66

Abstract: A semiconductor device includes: channel patterns disposed on a substrate; a pair of source/drain patterns disposed at first and second sides of each of the channel patterns; and a gate electrode disposed around the channel patterns, wherein the gate electrode includes a first recessed top surface between adjacent channel patterns, wherein the channel patterns are spaced apart from the substrate, and wherein the gate electrode is disposed between the substrate and the channel patterns.