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公开(公告)号:US20230067920A1
公开(公告)日:2023-03-02
申请号:US17741833
申请日:2022-05-11
Applicant: Samsung Display Co., Ltd.
Inventor: HANBIT KIM , TAEWOOK KANG , DOO-NA KIM , SANGSUB KIM , YUNJUNG OH , DOKYEONG LEE , JAEHWAN CHU
IPC: G09G3/3241 , G09G3/3291
Abstract: A pixel includes an organic light-emitting diode, a driving transistor, a first dual gate transistor, a first capacitor, and a compensation transistor. The organic light-emitting diode includes first and second terminals. The driving transistor generates the driving current and includes a first terminal to which a first power supply voltage is applied, a second terminal connected to the first terminal of the organic light-emitting diode, and a gate terminal. The first dual gate transistor is connected between the gate terminal of the driving transistor and the second terminal of the driving transistor and includes first and second sub-transistors. The first capacitor includes a first electrode to which the first power supply voltage is applied, and a second electrode connected to a first node that connects the first and second sub-transistors to each other. The compensation transistor includes a terminal connected between the second electrode and the first node.
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公开(公告)号:US20220392986A1
公开(公告)日:2022-12-08
申请号:US17750565
申请日:2022-05-23
Applicant: Samsung Display Co., LTD.
Inventor: KEUNWOO KIM , TAEWOOK KANG , SANGGUN CHOI , SHIN IL CHOI
IPC: H01L27/32
Abstract: A display device includes in order along a thickness direction of the display device an active pattern including a first region, a second region spaced apart from the first region in a first direction, and a third region between the first region and the second region, a first capacitor electrode which overlaps the third region of the active pattern to define portions of a driving transistor, and a second capacitor electrode which overlaps the first capacitor electrode and defines a groove corresponding to a portion of the first capacitor electrode.
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公开(公告)号:US20220149143A1
公开(公告)日:2022-05-12
申请号:US17363496
申请日:2021-06-30
Applicant: Samsung Display Co., Ltd.
Inventor: DONGMIN LEE , TAEWOOK KANG , HYUNAH SUNG , SUKYOUNG YANG , DOKEUN SONG , HYUNEOK SHIN
Abstract: A display device includes a base substrate, a buffer layer disposed on the base substrate, an active layer disposed on the buffer layer, a first gate insulation layer disposed on the active layer, a first conductive layer disposed on the first gate insulation layer and which is a single-layer including an aluminum alloy, a second gate insulation layer disposed on the first conductive layer, a second conductive layer disposed on the second gate insulation layer and which is a single-layer including an aluminum alloy, an insulation interlayer disposed on the second conductive layer, and a third conductive layer disposed on the insulation interlayer, directly contacting the first conductive layer through a first gate contact hole defined in the insulation interlayer and the second gate insulation layer, and directly contacting the second conductive layer through a second gate contact hole defined in the insulation interlayer.
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公开(公告)号:US20210343821A1
公开(公告)日:2021-11-04
申请号:US17158362
申请日:2021-01-26
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: JAEHWAN CHU , KEUNWOO KIM , TAEWOOK KANG , DOONA KIM , SANGSUB KIM , BUMMO SUNG , DOKYEONG LEE , YONGSU LEE
IPC: H01L27/32 , G09G3/3233
Abstract: An organic light-emitting display apparatus includes an organic light-emitting diode, a driving transistor configured to control an amount of electric current flowing to the organic light-emitting diode from a power line, a compensation transistor configured to diode-connect the driving transistor in response to a voltage applied to first and second compensation gate electrodes of the compensation transistor, and a gate insulating layer between the compensation gate electrodes and a compensation active region of a compensation transistor. A layer structure of the gate insulating layer between the first compensation gate electrode and the compensation active region is different from a layer structure of the gate insulating layer between the second compensation gate electrode and the compensation active region.
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