公开(公告)号：US08697507B2

公开(公告)日：2014-04-15

申请号：US13004750

申请日：2011-01-11

申请人： Jae Kyoung Mun ,  Hong Gu Ji ,  Ho Kyun Ahn ,  Hae Cheon Kim

发明人： Jae Kyoung Mun ,  Hong Gu Ji ,  Ho Kyun Ahn ,  Hae Cheon Kim

IPC分类号： H01L21/338

CPC分类号： H01L29/7785 ,  H01L29/42316

摘要： Provided are a transistor of a semiconductor device and a method of fabricating the same. The transistor of a semiconductor device includes an epitaxial substrate having a buffer layer, a first silicon (Si) planar doped layer, a first conductive layer, a second Si planar doped layer having a different dopant concentration from the first Si planar doped layer, and a second conductive layer, which are sequentially formed on a semi-insulating substrate; a source electrode and a drain electrode formed on both sides of the second conductive layer to penetrate the first Si planar doped layer to a predetermined depth to form an ohmic contact; and a gate electrode formed on the second conductive layer between the source electrode and the drain electrode to form a contact with the second conductive layer, wherein the gate electrode, the source electrode and the drain electrode are electrically insulated by an insulating layer, and a predetermined part of an upper part of the gate electrode is formed to overlap at least one of the source electrode and the drain electrode. Therefore, a maximum voltage that can be applied to the switching device is increased due to increases of a gate turn-on voltage and a breakdown voltage, and decrease of a parallel conduction component. As a result of this improved power handling capability, high-power and low-distortion characteristics and high isolation can be expected from the switching device.

摘要翻译： 提供半导体器件的晶体管及其制造方法。 半导体器件的晶体管包括具有缓冲层，第一硅（Si）平面掺杂层，第一导电层，具有与第一Si平面掺杂层不同的掺杂剂浓度的第二Si平面掺杂层的外延衬底，以及 第二导电层，其依次形成在半绝缘基板上; 源电极和漏电极，形成在第二导电层的两侧，以将第一Si平面掺杂层穿透到预定深度以形成欧姆接触; 以及形成在所述源电极和所述漏电极之间的所述第二导电层上的栅电极，以与所述第二导电层形成接触，其中所述栅电极，所述源电极和所述漏极由绝缘层电绝缘， 栅电极的上部的预定部分形成为与源电极和漏电极中的至少一个重叠。 因此，由于栅极导通电压和击穿电压的增加以及并联导通分量的降低，可以施加到开关器件的最大电压增加。 由于这种改进的功率处理能力，可以期望从开关器件获得高功率和低失真特性以及高隔离度。

公开(公告)号：US08518794B2

公开(公告)日：2013-08-27

申请号：US12874102

申请日：2010-09-01

申请人： Hokyun Ahn ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Woojin Chang ,  Hae Cheon Kim

发明人： Hokyun Ahn ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Woojin Chang ,  Hae Cheon Kim

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/8128 ,  H01L29/42316 ,  H01L29/66863

摘要： Provided is a semiconductor device. The semiconductor device includes: a substrate; an active layer on the substrate; a capping layer on the active layer; source/drain electrodes on the capping layer; a gate electrode on the active layer; and a first void region on a first sidewall of the gate electrode and a second void region on a second sidewall facing the first sidewall.

摘要翻译： 提供一种半导体器件。 半导体器件包括：衬底; 衬底上的有源层; 活性层上的覆盖层; 覆盖层上的源/漏电极; 有源层上的栅电极; 以及栅电极的第一侧壁上的第一空隙区域和面向第一侧壁的第二侧壁上的第二空隙区域。

公开(公告)号：US08421538B2

公开(公告)日：2013-04-16

申请号：US13185913

申请日：2011-07-19

申请人： Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

发明人： Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

IPC分类号： H03F3/04

CPC分类号： H03F3/08 ,  H03F1/34 ,  H03F3/3432 ,  H03F2200/121 ,  H03F2200/141 ,  H03F2200/18

摘要： Provided is a feedback amplifier including: an amplification circuit unit to generate an output voltage by amplifying an input voltage inputted through an input terminal; an output circuit unit to output the generated output voltage through an output terminal; a feedback circuit unit to control the gain of the amplification circuit unit by determining a total feedback resistance value using an external control signal and controlling an input current while the total feedback resistance value is determined; and a bias circuit unit to apply a bias voltage to the feedback circuit unit.

摘要翻译： 提供一种反馈放大器，包括：放大电路单元，通过放大通过输入端子输入的输入电压来产生输出电压; 输出电路单元，用于通过输出端子输出产生的输出电压; 反馈电路单元，其通过使用外部控制信号确定总反馈电阻值来控制放大电路单元的增益，并且在确定总反馈电阻值的同时控制输入电流; 以及偏置电路单元，用于向反馈电路单元施加偏置电压。

公开(公告)号：US08304859B2

公开(公告)日：2012-11-06

申请号：US12847174

申请日：2010-07-30

申请人： Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

发明人： Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

IPC分类号： H01L21/02 ,  H01L27/14

CPC分类号： H01L25/167 ,  G02B6/124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/1305 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided is an optical interconnection device. The optical interconnection device include: a first semiconductor chip disposed on a germanium-on-insulator (GOI) substrate; a light emitter on the GOI substrate, the light emitter receiving an electrical signal from the first semiconductor chip and outputting a light signal; a light detector on the GOI substrate, the light detector sensing the light signal and converting the sensed light signal into an electrical signal; and a second semiconductor chip on the GOI substrate, the second semiconductor chip receiving the electrical signal from the light detector.

摘要翻译： 提供了一种光互连装置。 光学互连装置包括：布置在绝缘体上（锗）绝缘体（GOI）基板上的第一半导体芯片; 在GOI基板上的光发射器，光发射器接收来自第一半导体芯片的电信号并输出​​光信号; 在GOI基板上的光检测器，光检测器感测光信号并将感测到的光信号转换成电信号; 以及在GOI基板上的第二半导体芯片，第二半导体芯片从光检测器接收电信号。

公开(公告)号：US20110057237A1

公开(公告)日：2011-03-10

申请号：US12874102

申请日：2010-09-01

申请人： Hokyun AHN ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Woojin Chang ,  Hae Cheon Kim

发明人： Hokyun AHN ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Woojin Chang ,  Hae Cheon Kim

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/8128 ,  H01L29/42316 ,  H01L29/66863

摘要： Provided is a semiconductor device. The semiconductor device includes: a substrate; an active layer on the substrate; a capping layer on the active layer; source/drain electrodes on the capping layer; a gate electrode on the active layer; and a first void region on a first sidewall of the gate electrode and a second void region on a second sidewall facing the first sidewall.

摘要翻译： 提供一种半导体器件。 半导体器件包括：衬底; 衬底上的有源层; 活性层上的覆盖层; 覆盖层上的源/漏电极; 有源层上的栅电极; 以及栅电极的第一侧壁上的第一空隙区域和面向第一侧壁的第二侧壁上的第二空隙区域。

公开(公告)号：US20120105158A1

公开(公告)日：2012-05-03

申请号：US13185913

申请日：2011-07-19

申请人： Sang-Heung LEE ,  Hae Cheon Kim ,  Eun Soo Nam

发明人： Sang-Heung LEE ,  Hae Cheon Kim ,  Eun Soo Nam

IPC分类号： H03F3/04

CPC分类号： H03F3/08 ,  H03F1/34 ,  H03F3/3432 ,  H03F2200/121 ,  H03F2200/141 ,  H03F2200/18

摘要： Provided is a feedback amplifier including: an amplification circuit unit to generate an output voltage by amplifying an input voltage inputted through an input terminal; an output circuit unit to output the generated output voltage through an output terminal; a feedback circuit unit to control the gain of the amplification circuit unit by determining a total feedback resistance value using an external control signal and controlling an input current while the total feedback resistance value is determined; and a bias circuit unit to apply a bias voltage to the feedback circuit unit.

摘要翻译： 提供一种反馈放大器，包括：放大电路单元，通过放大通过输入端子输入的输入电压来产生输出电压; 输出电路单元，用于通过输出端子输出产生的输出电压; 反馈电路单元，其通过使用外部控制信号确定总反馈电阻值来控制放大电路单元的增益，并且在确定总反馈电阻值的同时控制输入电流; 以及偏置电路单元，用于向反馈电路单元施加偏置电压。

公开(公告)号：US20110037078A1

公开(公告)日：2011-02-17

申请号：US12847174

申请日：2010-07-30

申请人： Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

发明人： Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

IPC分类号： H01L31/12

CPC分类号： H01L25/167 ,  G02B6/124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/1305 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided is an optical interconnection device. The optical interconnection device include: a first semiconductor chip disposed on a germanium-on-insulator (GOI) substrate; a light emitter on the GOI substrate, the light emitter receiving an electrical signal from the first semiconductor chip and outputting a light signal; a light detector on the GOI substrate, the light detector sensing the light signal and converting the sensed light signal into an electrical signal; and a second semiconductor chip on the GOI substrate, the second semiconductor chip receiving the electrical signal from the light detector.

摘要翻译： 提供了一种光互连装置。 光学互连装置包括：布置在绝缘体上（锗）绝缘体（GOI）基板上的第一半导体芯片; 在GOI基板上的光发射器，光发射器接收来自第一半导体芯片的电信号并输出​​光信号; 在GOI基板上的光检测器，光检测器感测光信号并将感测到的光信号转换成电信号; 以及在GOI基板上的第二半导体芯片，第二半导体芯片从光检测器接收电信号。

公开(公告)号：US08338241B2

公开(公告)日：2012-12-25

申请号：US13283626

申请日：2011-10-28

申请人： Hyung Sup Yoon ,  Byoung-Gue Min ,  Hokyun Ahn ,  Sang-Heung Lee ,  Hae Cheon Kim

发明人： Hyung Sup Yoon ,  Byoung-Gue Min ,  Hokyun Ahn ,  Sang-Heung Lee ,  Hae Cheon Kim

IPC分类号： H01L21/338

CPC分类号： H01L29/7783 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/42316 ,  H01L29/66462

摘要： Provided are a method of manufacturing a normally-off mode high frequency device structure and a method of simultaneously manufacturing a normally-on mode high frequency device structure and a normally-off mode high frequency device structure on a single substrate.

摘要翻译： 提供一种制造常闭型高频器件结构的方法以及在单个衬底上同时制造常开模式高频器件结构和常关型高频器件结构的方法。

公开(公告)号：US20120142148A1

公开(公告)日：2012-06-07

申请号：US13283626

申请日：2011-10-28

申请人： Hyung Sup YOON ,  Byoung-Gue Min ,  Hokyun Ahn ,  Sang-Heung Lee ,  Hae Cheon Kim

发明人： Hyung Sup YOON ,  Byoung-Gue Min ,  Hokyun Ahn ,  Sang-Heung Lee ,  Hae Cheon Kim

IPC分类号： H01L21/335

CPC分类号： H01L29/7783 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/42316 ,  H01L29/66462

摘要： Provided are a method of manufacturing a normally-off mode high frequency device structure and a method of simultaneously manufacturing a normally-on mode high frequency device structure and a normally-off mode high frequency device structure on a single substrate.

摘要翻译： 提供一种制造常闭型高频器件结构的方法以及在单个衬底上同时制造常开模式高频器件结构和常关型高频器件结构的方法。

公开(公告)号：US20080136552A1

公开(公告)日：2008-06-12

申请号：US11875604

申请日：2007-10-19

申请人： Dong Young Kim ,  Jae Kyoung Mun ,  Dong Suk Jun ,  Hae Cheon Kim

发明人： Dong Young Kim ,  Jae Kyoung Mun ,  Dong Suk Jun ,  Hae Cheon Kim

IPC分类号： H03H7/38

CPC分类号： H01P5/08 ,  H01L2924/19107

摘要： Provided is a microwave module having a converter for improving transmission characteristics in a millimeter-wave band. When a microstrip transmission line and a conductor-backed coplanar waveguide (CBCPW) transmission line are connected by wire bonding, a change in impedance caused by wire bonding and an abrupt change in electric field components between the two transmission lines are reduced by the converter. Therefore, insertion loss and return loss are reduced, and transmission characteristics in a millimeter-wave band are improved.

摘要翻译： 提供了一种具有用于改善毫米波段中的传输特性的转换器的微波模块。 当微带传输线和导体背面共面波导（CBCPW）传输线通过引线接合连接时，通过引线键合引起的阻抗变化和两条传输线之间的电场分量的突然变化被转换器减少。 因此，降低了插入损耗和回波损耗，提高了毫米波段的传输特性。