公开(公告)号：US11302736B2

公开(公告)日：2022-04-12

申请号：US16940458

申请日：2020-07-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiichi Yoneda ,  Yusuke Negoro

IPC: H01L29/10 ,  H01L27/146 ,  H01L23/00

Abstract: An imaging device includes a first semiconductor substrate and a second semiconductor substrate. The first semiconductor substrate includes a photoelectric conversion device and a first transistor. The second semiconductor substrate includes a second transistor, a third transistor, and a fourth transistor. One electrode of the photoelectric conversion device is electrically connected to one of a source and a drain of the first transistor. The other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor and a gate of the third transistor. One of a source and a drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor. The photoelectric conversion device and at least parts of the second transistor, the third transistor, and the fourth transistor overlap with each other.