公开(公告)号：US20130207168A1

公开(公告)日：2013-08-15

申请号：US13768037

申请日：2013-02-15

Applicant: Texas Instruments Incorporated

Inventor： Henry Litzmann EDWARDS ,  Dimitar Trifonov TRIFONOV

IPC: H01L31/0236

CPC classification number: H01L31/02366 ,  H01L31/02161 ,  H01L31/02327 ,  H01L31/103

Abstract: A semiconductor device contains a photodiode formed in a substrate of the semiconductor device. At a top surface of the substrate, over the photodiode, a surface grating of periodic field oxide in a periodic configuration and/or gate structures in a periodic configuration is formed. The field oxide may be formed using an STI process or a LOCOS process. A semiconductor device with a surface grating including both field oxide and gate structures has the gate structures over the semiconductor substrate, between the field oxide. The surface grating has a pitch length up to 3 microns. The surface grating covers at least half of the photodiode.

Abstract translation: 半导体器件包含形成在半导体器件的衬底中的光电二极管。 在衬底的顶表面上，在光电二极管上，形成周期性构造的周期性场氧化物的表面光栅和/或周期性构造的/或栅极结构。 场氧化物可以使用STI工艺或LOCOS工艺形成。 具有包括场氧化物和栅极结构的表面光栅的半导体器件在半导体衬底之间具有位于场氧化物之间的栅极结构。 表面光栅具有高达3微米的间距长度。 表面光栅覆盖光电二极管的至少一半。