公开(公告)号：US20210202399A1

公开(公告)日：2021-07-01

申请号：US16945595

申请日：2020-07-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Cheng-Wei CHANG ,  Chia-Hung CHU ,  Kao-Feng LIN ,  Hsu-Kai CHANG ,  Shuen-Shin LIANG ,  Sung-Li WANG ,  Yi-Ying LIU ,  Po-Nan YEH ,  Yu Shih WANG ,  U-Ting CHIU ,  Chun-Neng LIN ,  Ming-Hsi YEH

IPC: H01L23/532 ,  H01L23/522 ,  H01L21/768

Abstract: A semiconductor device includes a gate electrode, a source/drain structure, a lower contact contacting either of the gate electrode or the source/drain structure, and an upper contact disposed in an opening formed in an interlayer dielectric (ILD) layer and in direct contact with the lower contact. The upper contact is in direct contact with the ILD layer without an interposing conductive barrier layer, and the upper contact includes ruthenium.