公开(公告)号：US20200264515A1

公开(公告)日：2020-08-20

申请号：US16866188

申请日：2020-05-04

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hung-Wen CHO ,  Fu-Jye LIANG ,  Chun-Kuang CHEN ,  Chih-Tsung SHIH ,  Li-Jui CHEN ,  Po-Chung CHENG ,  Chin-Hsiang LIN

IPC: G03F7/20

Abstract: A method of controlling reticle masking blade positioning to minimize the impact on critical dimension uniformity includes determining a target location of a reticle masking blade relative to a reflective reticle and positioning the reticle masking blade at the target location. A position of the reticle masking blade is monitored during an imaging operation. The position of the reticle masking blade is compared with the target location and the position of the reticle masking blade is adjusted if the position of the reticle masking blade is outside a tolerance of the target location.

公开(公告)号：US20200133141A1

公开(公告)日：2020-04-30

申请号：US16663214

申请日：2019-10-24

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Tsung SHIH ,  Tsung-Chih CHIEN ,  Tsung Chuan LEE

IPC: G03F7/20

Abstract: A method includes reducing refractive index of an environment at or adjacent an extreme ultraviolet (EUV) mask to below 1.0. The EUV mask is in an EUV lithography system that forms a projection beam of EUV radiation using EUV radiation emitted from a radiation source. The method further includes exposing the EUV mask to the projection beam of EUV radiation.