公开(公告)号：US20190164883A1

公开(公告)日：2019-05-30

申请号：US16264622

申请日：2019-01-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Meng-Hung SHEN ,  Chih-Liang CHEN ,  Charles Chew-Yuen YOUNG ,  Jiann-Tyng TZENG ,  Kam-Tou SIO ,  Wei-Cheng LIN

IPC: H01L23/528 ,  H01L49/02 ,  H01L29/423 ,  H01L21/768 ,  H01L23/522 ,  H01L29/66 ,  H01L21/762

Abstract: A semiconductor structure is disclosed that includes a first conductive line, a first conductive segment, a second conductive segment, and a gate. The first conductive segment is electrically coupled to the first conductive line through a conductive via. The second conductive segment is configured to electrically couple the first conductive segment with a third conductive segment disposed over an active area. The gate is disposed under the second conductive segment and disposed between first conductive segment and the third conductive segment. The first conductive line and the second conductive segment are disposed at two sides of the conductive via respectively.