公开(公告)号：US5631867A

公开(公告)日：1997-05-20

申请号：US456328

申请日：1995-06-01

申请人： Hiroshi Akamatsu ,  Yukinobu Adachi ,  Susumu Tanida ,  Tooru Ichimura

发明人： Hiroshi Akamatsu ,  Yukinobu Adachi ,  Susumu Tanida ,  Tooru Ichimura

IPC分类号： G11C11/407 ,  C04B28/34 ,  G11C5/14 ,  G11C7/00

CPC分类号： G11C5/147 ,  G11C5/145

摘要： An external power source voltage Vcc rises until it exceeds the threshold voltage Vth of an NMOS transistor diode-connected between the external power source (voltage Vcc) and an internal boosted power source (voltage Vpp), whereupon the NMOS transistor is turned on, supplying the internal boosted power source with a voltage (Vcc-Vth) until the power source voltage Vcc reaches its final value. And when the internal reset signal ZPOR expires, the internal boosted power source generating circuit is started to operate so that the internal boost source voltage Vpp is boosted to an intended level Vpp. As a result, when the power is turned on, early stabilization of the boosted power source voltage is realized in a semiconductor storage device.

摘要翻译： 外部电源电压Vcc上升直到其超过连接在外部电源（电压Vcc）和内部升压电源（电压Vpp）之间的NMOS晶体管二极管的阈值电压Vth，于是NMOS晶体管导通， 具有电压（Vcc-Vth）的内部升压电源，直到电源电压Vcc达到其最终值。 并且当内部复位信号ZPOR期满时，内部升压电源发生电路开始工作，使得内部升压电源电压Vpp升压到预期电平Vpp。 结果，当电源接通时，在半导体存储装置中实现升压电源电压的早期稳定。