Josephson device, method of forming Josephson device and superconductor circuit
    24.
    发明授权
    Josephson device, method of forming Josephson device and superconductor circuit 有权
    约瑟夫逊装置,形成约瑟夫逊装置和超导体电路的方法

    公开(公告)号:US08032196B2

    公开(公告)日:2011-10-04

    申请号:US11895256

    申请日:2007-08-23

    摘要: A Josephson device includes a first superconducting electrode layer, a barrier layer and a second superconducting electrode layer that are successively stacked. The first and second superconducting electrode layers are made of an oxide superconductor material having (RE)1(AE)2Cu3Oy as a main component, where an element RE is at least one element selected from a group consisting of Y, La, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, and an element AE is at least one element selected from a group consisting of Ba, Sr and Ca. The barrier layer is made of a material that includes the element RE, the element AE, Cu and oxygen, where in cations within the material forming the barrier layer, a Cu content is in a range of 35 At. % to 55 At. % and an RE content is in a range of 12 At. % to 30 At. %, and the barrier layer has a composition different from compositions of the first and second superconducting electrode layers.

    摘要翻译: 约瑟夫逊装置包括依次堆叠的第一超导电极层,阻挡层和第二超导电极层。 第一和第二超导电极层由具有(RE)1(AE)2Cu 3 O y作为主要成分的氧化物超导体材料制成,其中元素RE为选自Y,La,Pr,Nd中的至少一种元素 ,Sm,Eu,Gd,Dy,Ho,Er,Tm,Yb和Lu,元素AE为选自Ba,Sr和Ca中的至少一种元素。 阻挡层由包括元素RE,元素AE,Cu和氧的材料制成,其中在形成阻挡层的材料内的阳离子中Cu含量在35Aa的范围内。 %至55 At。 %,RE含量在12 At范围内。 %至30 At。 %,并且阻挡层具有与第一和第二超导电极层的组成不同的组成。