Ion beam deposition apparatus
    21.
    发明授权
    Ion beam deposition apparatus 失效
    离子束沉积装置

    公开(公告)号:US4559901A

    公开(公告)日:1985-12-24

    申请号:US696518

    申请日:1985-01-30

    CPC分类号: C23C14/221 H01J37/3178

    摘要: An ion beam deposition apparatus capable of uniformly distributing an ionized vaporized material on a desired area of a substrate is disclosed. The apparatus includes an accelerating electrode and a deflecting electrode each arranged between an ionization region and a substrate.

    摘要翻译: 公开了一种离子束沉积装置,其能够将电离的汽化材料均匀分布在基板的所需区域上。 该装置包括加速电极和偏转电极,各自设置在电离区域和基板之间。

    Multi-beam, multi-aperture ion sources of the beam-plasma type
    25.
    发明授权
    Multi-beam, multi-aperture ion sources of the beam-plasma type 失效
    射束等离子体型的多光束,多孔径离子源

    公开(公告)号:US4087720A

    公开(公告)日:1978-05-02

    申请号:US729825

    申请日:1976-10-05

    申请人: Toshinori Takagi

    发明人: Toshinori Takagi

    CPC分类号: H01J27/20 H01J27/18

    摘要: A multi-beam, multi-aperture ion source of the beam-plasma type comprises three major regions: the first region where there is created a plurality of electron beams useful for the extraction and focusing of ions; the second region where a gaseous discharge is effected with the aid of the electron beams emerging from the first region, and high frequency oscillation or microwave oscillation is provided by utilization of instability due to electron beam-plasma interactions to thereby create high density ions by that heating energy; and the third region where the electron beams from the second region are collected through the use of a collector, and construction and applied voltage is adjusted to facilitate the high frequency oscillation. The numerous ions created within the second region are trapped into the form of finely focused beams by the well of negative potential which is defined by the plurality of the electron beams emerging from the first region. The resulting ion beams are extracted and combined in a direction opposite to the direction of the electron beams, thereby producing a single well-focused ion beam.

    摘要翻译: 束 - 等离子体型的多光束,多孔径离子源包括三个主要区域:其中产生用于离子的提取和聚焦的多个电子束的第一区域; 借助于从第一区域出射的电子束来实现气体放电的第二区域,以及由于电子束 - 等离子体相互作用而引起的不稳定性,从而产生高频振荡或微波振荡,由此产生高密度离子 加热能量; 并且通过使用集电体来收集来自第二区域的电子束的第三区域,并且调整结构和施加电压以促进高频振荡。 在第二区域内产生的许多离子被由由第一区域出射的多个电子束限定的负电位的阱捕获成精细聚焦的光束的形式。 所得到的离子束在与电子束方向相反的方向上被提取和组合,从而产生单一的良好聚焦的离子束。

    Thin-film deposition
    29.
    发明授权
    Thin-film deposition 失效
    薄膜沉积

    公开(公告)号:US4374162A

    公开(公告)日:1983-02-15

    申请号:US140596

    申请日:1980-04-15

    申请人: Toshinori Takagi

    发明人: Toshinori Takagi

    IPC分类号: C23C14/24 C23C14/32 C23C13/00

    CPC分类号: C23C14/243 C23C14/32

    摘要: A material is introduced into and heated within a crucible of the sealed type for vaporization purposes and the crucible includes an ejection nozzle. The vapor of the material is then ejected through the nozzle into a vacuum region to strike onto a substrate, the pressure of the vacuum region being selected to be at least 1/100 times as low as the vapor pressure within the crucible and of approximately 10.sup.-2 Torr or less. Change in ejection velocity provide control of fine structures of films when being deposited on the substrate.

    摘要翻译: 将材料引入并加热到用于蒸发目的的密封型坩埚中,坩埚包括喷嘴。 然后将材料的蒸气通过喷嘴喷射到真空区域中以撞击到基底上,真空区域的压力被选择为坩埚内的蒸汽压力的至少1/100倍,并且大约为10 -2乇以下。 喷射速度的改变提供了当沉积在基底上时薄膜的精细结构的控制。