公开(公告)号：US07691226B2

公开(公告)日：2010-04-06

申请号：US11387813

申请日：2006-03-24

申请人： Kazuki Denpoh

发明人： Kazuki Denpoh

IPC分类号： H01L21/00 ,  C23C14/00 ,  C23C16/00

CPC分类号： H05H1/0081 ,  H01J37/32935

摘要： An electron temperature measurement method that enables an electron temperature as a plasma parameter to be measured precisely.A plasma is produced in a chamber 11 such that a wafer W is subjected to reactive ion etching therein. An ion energy distribution in the chamber 11 is measured. An ion energy distribution in the chamber 11 is simulated based on a set electron temperature. The measured ion energy distribution and the simulated ion energy distribution are compared. The electron temperature of the plasma is estimated based on results of the comparison mentioned above.

摘要翻译： 能够精确测量电子温度作为等离子体参数的电子温度测定方法。 在室11中产生等离子体，使得晶片W在其中进行反应离子蚀刻。 测量室11中的离子能量分布。 基于设定的电子温度来模拟室11中的离子能量分布。 比较测量的离子能量分布和模拟离子能量分布。 基于上述比较的结果估计等离子体的电子温度。

公开(公告)号：US5718763A

公开(公告)日：1998-02-17

申请号：US416369

申请日：1995-04-04

申请人： Kiyohisa Tateyama ,  Kimio Motoda ,  Tatsuya Iwasaki ,  Takenobu Matsuo ,  Kazuki Denpoh ,  Eiji Yamaguchi

发明人： Kiyohisa Tateyama ,  Kimio Motoda ,  Tatsuya Iwasaki ,  Takenobu Matsuo ,  Kazuki Denpoh ,  Eiji Yamaguchi

IPC分类号： B05C11/08 ,  G03F7/16 ,  H01L21/00 ,  H01L21/687 ,  D05C5/00

CPC分类号： H01L21/67173 ,  B05C11/08 ,  G03F7/162 ,  G03F7/168 ,  H01L21/6715 ,  H01L21/68707 ,  Y10S134/902

摘要： A apparatus of resist-processing a rectangular substrate including a resist coating step of supplying resist solution to the substrate, while rotating it, to form resist film at least on one surface of it and a resist removing step of jetting removing liquid, which can solve resist, to both surfaces of it at its side peripheral portions to remove the resist film from them.

摘要翻译： 一种对矩形基板进行抗蚀处理的装置，包括在将抗蚀剂溶液旋转的同时将抗蚀剂溶液供给到基板的抗蚀剂涂布步骤，至少在其一个表面上形成抗蚀剂膜，以及除去液体的抗蚀剂去除步骤，其可以解决 在其侧边缘处抵抗其两个表面以从它们去除抗蚀剂膜。

公开(公告)号：US20100321029A1

公开(公告)日：2010-12-23

申请号：US12867120

申请日：2009-01-30

申请人： Toru Ito ,  Masato Kawakami ,  Sumie Nagaseki ,  Kazuki Denpoh

发明人： Toru Ito ,  Masato Kawakami ,  Sumie Nagaseki ,  Kazuki Denpoh

IPC分类号： G01N27/62

CPC分类号： H01J37/3244 ,  H01J37/32449 ,  H01J37/32935

摘要： Provided is a technique capable of ascertaining the process condition of the boundary between electrically positive and negative plasma regions. In a vacuum chamber, one of the parameters of process conditions is stepwisely changed to generate a plasma under at least three process conditions. The parameters include a flow rate ratio between an electrically negative gas and an electrically positive gas, a pressure in the vacuum chamber and the magnitude of an energy supplied to the gases. Next, a voltage is applied to a Langmuir probe positioned in that plasma, and a current-voltage curve indicating the relationship between the applied voltage and the electric current to flow through the probe is acquired for each of the process conditions. On the basis of the current-voltage curve group acquired, the process conditions are determined for the boundary between the electrically positive and negative plasma regions.

摘要翻译： 提供了一种能够确定电正极和负电等离子体区域之间的边界的工艺条件的技术。 在真空室中，逐步改变工艺条件的参数之一，以在至少三个工艺条件下产生等离子体。 参数包括电负气体和电正气体之间的流量比，真空室中的压力和供应给气体的能量的大小。 接下来，对位于该等离子体中的Langmuir探针施加电压，并且针对每个处理条件获取指示施加的电压和流过探针的电流之间的关系的电流 - 电压曲线。 基于所获得的电流 - 电压曲线组，确定电气正电压和负电压区域之间的边界的工艺条件。

公开(公告)号：US20070187363A1

公开(公告)日：2007-08-16

申请号：US11673948

申请日：2007-02-12

申请人： Hiromi OKA ,  Akitaka Shimizu ,  Shosuke Endoh ,  Kazuki Denpoh

发明人： Hiromi OKA ,  Akitaka Shimizu ,  Shosuke Endoh ,  Kazuki Denpoh

IPC分类号： G01L21/30 ,  H01L21/306 ,  C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32449 ,  H01J37/3244

摘要： A substrate processing apparatus that enables a state of plasma over a substrate to be maintained in a desired state easily. A plasma processing apparatus 10 that has therein a camber 11, a stage 12, and a processing gas introducing nozzle 38 carries out etching on a wafer W. The chamber 11 houses the wafer W. The stage 12 is disposed in the chamber 11 and the wafer W is mounted thereon. The processing gas introducing nozzle 38 is a projecting body that projects out into the chamber 11, and has therein a plurality of processing gas introducing holes 56 that open out in different directions to one another.

摘要翻译： 使基板上的等离子体状态能够容易地维持在期望状态的基板处理装置。 其中具有外倾角11，台12和处理气体引入喷嘴38的等离子体处理装置10对晶片W进行蚀刻。腔室11容纳晶片W.台12设置在腔室11中， 晶片W安装在其上。 处理气体引入喷嘴38是突出到室11中的突出体，并且在其中具有在彼此不同的方向上开放的多个处理气体导入孔56。

公开(公告)号：US20060214593A1

公开(公告)日：2006-09-28

申请号：US11387813

申请日：2006-03-24

申请人： Kazuki Denpoh

发明人： Kazuki Denpoh

IPC分类号： H01J7/24

CPC分类号： H05H1/0081 ,  H01J37/32935

摘要： An electron temperature measurement method that enables an electron temperature as a plasma parameter to be measured precisely. A plasma is produced in a chamber 11 such that a wafer W is subjected to reactive ion etching therein. An ion energy distribution in the chamber 11 is measured. An ion energy distribution in the chamber 11 is simulated based on a set electron temperature. The measured ion energy distribution and the simulated ion energy distribution are compared. The electron temperature of the plasma is estimated based on results of the comparison mentioned above.

摘要翻译： 能够精确测量电子温度作为等离子体参数的电子温度测定方法。 在室11中产生等离子体，使得晶片W在其中进行反应离子蚀刻。 测量室11中的离子能量分布。 基于设定的电子温度来模拟室11中的离子能量分布。 比较测量的离子能量分布和模拟离子能量分布。 基于上述比较的结果估计等离子体的电子温度。

公开(公告)号：US20050274321A1

公开(公告)日：2005-12-15

申请号：US11147434

申请日：2005-06-08

申请人： Tomoaki Ukei ,  Kimihiro Higuchi ,  Tatsuo Matsudo ,  Kazuki Denpoh

发明人： Tomoaki Ukei ,  Kimihiro Higuchi ,  Tatsuo Matsudo ,  Kazuki Denpoh

IPC分类号： C23C16/00 ,  C23C16/458 ,  C23C16/52 ,  H01L21/00

CPC分类号： C23C16/52 ,  C23C16/4585 ,  C23C16/463 ,  H01L21/67248

摘要： A plasma processing apparatus for converting a processing gas into a plasma by a high frequency power in a processing chamber and performing a plasma processing on a substrate mounted on a mounting table includes a ring portion disposed to surround the substrate on the mounting table, and a temperature control unit for establishing a temperature difference between the ring portion and the substrate, such that the ring portion is at least 50° C. higher than the substrate. Further, the processing gas generates chlorine radicals, and the temperature control unit is at least one of a heating unit for heating the ring portion and a cooling unit for cooling the mounting table.

摘要翻译： 一种等离子体处理装置，用于通过处理室中的高频功率将处理气体转换成等离子体，并且对安装在安装台上的基板进行等离子体处理包括设置成围绕安装台上的基板的环形部分，以及 温度控制单元，用于建立环部和基板之间的温度差，使得环部比基板高至少50℃。 此外，处理气体产生氯自由基，温度控制单元是用于加热环形部分的加热单元和用于冷却安装台的冷却单元中的至少一个。

公开(公告)号：US06828243B2

公开(公告)日：2004-12-07

申请号：US10294838

申请日：2002-11-15

申请人： Kazuki Denpoh

发明人： Kazuki Denpoh

IPC分类号： H01L21302

CPC分类号： H01L21/67069 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32642

摘要： A compensation ring 31 disposed to surround a periphery of a wafer W on a susceptor 30 is concentrically divided into an inside first compensation ring member 32 and an outside second compensation ring member 33. A width of a first compensation ring member 32 is made such thin as one to three times mean free path of treatment gas molecules, thereby suppressing heat transfer between a susceptor 30 and a second compensation ring member 33. A base of a second compensation ring member, through a layer of conductive silicone rubber 34, is made to come into an intimate contact with an upper surface of a susceptor 30, thus helping to cool.

摘要翻译： 设置在围绕基座30上的晶片W周围的补偿环31同心地分成内侧第一补偿环构件32和外侧第二补偿环构件33.第一补偿环构件32的宽度被制成如此薄 作为处理气体分子的平均自由程的一到三次，从而抑制基座30和第二补偿环构件33之间的热传递。通过导电硅橡胶层34的第二补偿环构件的基底被制成 与基座30的上表面紧密接触，从而有助于冷却。

公开(公告)号：US5853803A

公开(公告)日：1998-12-29

申请号：US964608

申请日：1997-11-05

申请人： Kiyohisa Tateyama ,  Kimio Motoda ,  Tatsuya Iwasaki ,  Takenobu Matsuo ,  Kazuki Denpoh ,  Eiji Yamaguchi

发明人： Kiyohisa Tateyama ,  Kimio Motoda ,  Tatsuya Iwasaki ,  Takenobu Matsuo ,  Kazuki Denpoh ,  Eiji Yamaguchi

IPC分类号： B05C11/08 ,  G03F7/16 ,  H01L21/00 ,  H01L21/687 ,  B05D3/12

CPC分类号： H01L21/67173 ,  B05C11/08 ,  G03F7/162 ,  G03F7/168 ,  H01L21/6715 ,  H01L21/68707 ,  Y10S134/902

摘要： A method of resist-processing a rectangular substrate including a resist coating step of supplying resist solution to the substrate, while rotating it, to form resist film at least on one surface of it and a resist removing step of jetting removing liquid, which can solve resist, to both surfaces of it at its side peripheral portions to remove the resist film from them.

摘要翻译： 一种抗蚀剂处理方法，包括抗蚀剂涂布步骤，该方法包括在将抗蚀剂溶液旋转的同时向其提供抗蚀剂溶液，以至少在其一个表面上形成抗蚀剂膜，以及除去液体的抗蚀剂去除步骤，其可以解决 在其侧边缘处抵抗其两个表面以从它们去除抗蚀剂膜。