摘要:
A developing cartridge is placed on a supporting member such that a lengthwise direction of the developing cartridge is inclined with respect to the vertical and horizontal directions, collecting toner remaining in the developing cartridge at the lowest part in the developing cartridge. Then, a suction tube is inserted into a toner chamber of the developing cartridge and sucks up toner remaining in the developing cartridge.
摘要:
A receiving device includes a receiver; a frequency converter; an A/D converter; and a digital signal processor, wherein the A/D converter includes a variable gain amplifier adjusting a signal level of the analog signal from the frequency converter; an A/D converting portion converting an analog signal from the variable gain amplifier into an m-bit digital signal and an n-bit digital signal and outputting the m-bit digital signal and the n-bit digital signal, the n-bit digital signal serving as an output signal to the digital signal processor; and a gain controller calculating a coarse adjustment gain of the variable gain amplifier on the basis of a power of the m-bit digital signal to control the gain of the variable gain amplifier and calculating a fine adjustment gain on the basis of a power of the n-bit digital signal to control the gain of the variable gain amplifier.
摘要翻译:接收装置包括接收机; 变频器; A / D转换器; 以及数字信号处理器,其中所述A / D转换器包括调节来自所述变频器的模拟信号的信号电平的可变增益放大器; A / D转换部分将来自可变增益放大器的模拟信号转换为m位数字信号和n位数字信号,并输出m位数字信号和n位数字信号,n位数字信号 信号作为数字信号处理器的输出信号; 以及增益控制器,其基于所述m位数字信号的功率,计算所述可变增益放大器的粗调增益,以控制所述可变增益放大器的增益,并且基于所述可变增益放大器的功率计算微调整增益 n位数字信号来控制可变增益放大器的增益。
摘要:
A semiconductor laser device (1) includes: a substrate (3) having a principal plane (3a); a photonic crystal layer (7) having an epitaxial layer (2a) of gallium nitride formed on substrate (3) in a direction in which principal plane (3a) extends and a low refractive index material (2b) having a refractive index lower than that of epitaxial layer (2a); an n-type clad layer (4) formed on substrate (3); a p-type clad layer (6) formed on substrate (3); an active layer (5) that is interposed between n-type clad layer (4) and p-type clad layer (6) and emits light when a carrier is injected thereinto; and a GaN layer (12) that covers a region directly on photonic crystal layer (7). Thus, the semiconductor laser device can be manufactured without fusion.
摘要:
A developer cartridge includes a casing, an agitator, and a developing roller. The casing has a first inner space serving as a developer accommodating chamber that accommodates developer and a second inner space serving as a developing chamber in communication with the developer accommodating chamber. The agitator is disposed in the developer accommodating chamber and has a shaft portion that is rotatably supported in the casing. The agitator is rotatable about the shaft portion. The developing roller is disposed in the developing chamber and is rotatably supported in the casing. The casing is formed with a developer opening located at a position closer to the developing chamber than the shaft portion is.
摘要:
Herein disclosed is a shaft sealing apparatus which comprises a vacuum casing formed with a vacuum chamber, a driving shaft having an outer cylindrical surface and movably extending in the vacuum chamber of the vacuum casing, and a sealing ring in the form of an annular ring shape and including a sealing lip held in contact with the outer cylindrical surface of the driving shaft, an annular spring member operative to impart a force to the sealing lip to ensure that the sealing lip is held in tight contact with the outer cylindrical surface of the driving shaft, and a peripheral portion radially outwardly extending from the sealing lip, in which the outer cylindrical surface of the driving shaft is smaller in surface roughness Ra than 0.1 (μm).