摘要:
A semiconductor device includes a semiconductor substrate on which a circuit element forming region and a plurality of connection pads are formed, a first columnar electrode which is formed on a first connection pad so as to be electrically connected to the first connection pad, a first conductive layer which is formed on a second connection pad so as to be electrically connected to the second connection pad, an encapsulating film which is formed at least around the first columnar electrode, on the semiconductor substrate and on the first conductive layer, and a second conductive layer which is formed on the encapsulating film so as to face the first conductive layer. A passive element is formed from the first and second conductive layers.
摘要:
A semiconductor device of a CSP structure is obtained by forming projection electrodes on a plurality of circuit element forming areas of a semiconductor wafer substrate, and then dividing the wafer into chips. Wiring patterns connected to connection pads for signal transmission are provided on the upper surface of an insulating film formed on the circuit element forming areas, and a conductive layer connected to a connection pad connected to a ground potential is provided on the resultant structure except for on the wiring patterns and on areas near the wiring patterns. Further, a thin film circuit element may be provided at the same layer as the conductive layer or below the conductive layer.
摘要:
Disclosed is a diode device in which two electrodes of regions forming both terminals are provided on the same face, thereby enabling the device to be connected to a circuit substrate by face-down bonding. Since a region is located within the semiconductor base, an electrode cannot be connected at the top face thereof; to overcome this, a groove is provided extending in a perpendicular direction from the top face of the semiconductor base to the region, and an electrode is provided in the groove. Then, the electrode in the groove is exposed at the top face, enabling the electrodes of both regions to be connected at the top face.
摘要:
A miniature variable-beam microwave antenna (1) comprises antenna conductors (100a, 100b), an EBG conductor (120), a variable reactance element (130), and an adjusting part (150). The EBG conductor (120) is connected to a grounded part (160) through the variable reactance element (130). The adjusting part (150) changes the apparent reactance of the EBG conductor (120) by changing the capacity of the variable reactance element (130). As the apparent reactance of the EBG conductor (120) changes, the directivity of the miniature variable-beam microwave antenna (1) also changes.
摘要:
Disclosed are a multilayer styrenic resin sheet including 10 to 50 laminated layers which are each made of a styrenic resin composition that includes 29 to 65 mass % of a styrene/conjugated diene copolymer (A), 51 to 15 mass % of a polystyrene resin (B) and 20 to 9 mass % of an impact-resistant polystyrene resin (C) and which each have an average thickness of 2 to 50 μm; and a packaging material (such as carrier tape or tray) for electronic components which is formed from the multilayer styrenic resin sheet. The melt tension of the styrenic resin composition at 220° C. is preferably 10 to 30 mN, and the content of the conjugated diene is preferably 10 to 25 mass % relative to 100 mass % of the copolymer (A).
摘要:
In a power-loss reducing system, a transmitting unit causes a radar to transmit a measurement radio wave, and a power monitoring unit monitors power of the measurement radio wave transmitted from the radar through a cover while changing a positional relationship between the cover and the radar. An extracting unit extracts a value of the changed positional relationship between the cover and the radar based on a result of the monitoring of the power such that the extracted value of the positional relationship allows reduction of power loss of a radar wave transmitted, through the cover, from the radar located based on the extracted value of the positional relationship.
摘要:
A chip-type electronic component includes a substrate, a common potential layer formed on an upper side of the substrate, an insulating film formed on the common potential layer, and provided to expose at least part of the common potential layer. At least one common potential electrode is provided on the exposed part of the common potential layer, and a plurality of conductors provided on the insulating film, each of the conductors forming a part of a thin-film circuit element. At least one columnar electrode is electrically connected to at least one of the conductors, and a sealing film is formed around the columnar electrode.
摘要:
A high frequency module for converting a high frequency wave in a free space to a high frequency wave in a planar waveguide includes two metal plates, a dielectric substrate and a planar waveguide disposed on the dielectric substrate. The dielectric substrate between the two metal plates has the planar waveguide disposed thereon, and the planar waveguide protrudes either in a through hole bored in one of the two metal plates, or in a hollow space defined by the other of the two metal plates on the dielectric substrate.
摘要:
In a semiconductor device, re-wiring is provided on a circuit element formation region of a semiconductor substrate. A columnar electrode for connection with a circuit board is provided on the rewiring. A first insulating film is provided over the semiconductor substrate excluding a connection pad, and a ground potential layer connected to a ground potential is provided on an upper surface of the first insulating film. A re-wiring is provided over the ground potential layer with a second insulating film interposed. The ground potential layer serves as a barrier layer for preventing crosstalk between the re-wiring and circuit element formation region. A thin-film circuit element is provided on the second insulating film, and a second ground potential layer is provided as a second barrier layer over the thin-film circuit element with an insulating film interposed. Re-wiring is provided over the second ground potential layer.
摘要:
A thin film passive element includes at least one of a capacitance element having a plurality of conductive layers and a dielectric material layer and an inductance element formed of a patterned conductive layer is stacked on a circuit element-forming region of a semiconductor substrate provided with a plurality of connection pads and is connected to the circuit element of the circuit element-forming region.