公开(公告)号：US09287113B2

公开(公告)日：2016-03-15

申请号：US14074617

申请日：2013-11-07

Applicant: Novellus Systems, Inc.

Inventor： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  H01L21/66 ,  C23C16/455

CPC classification number: H01L22/26 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L22/12 ,  H01L22/20

Abstract: Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

Abstract translation: 本文提供了在敏感基板上形成薄膜同时防止对敏感基板的损伤的方法和装置。 在某些实施方案中，方法包括在敏感基材上形成双层膜，其均保护下面的基材免受损坏并具有所需的电性能。 还提供了用于评估和优化膜的方法和装置，包括评估由特定沉积工艺产生的衬底损伤的量的方法和确定保护层的最小厚度的方法。 本文所述的方法和装置可以用于在多种敏感材料如硅，钴，锗 - 锑 - 碲，硅 - 锗，氮化硅，碳化硅，钨，钛，钽，铬，镍， 钯，钌或氧化硅。

公开(公告)号：US20150206719A1

公开(公告)日：2015-07-23

申请号：US14607997

申请日：2015-01-28

Applicant: Novellus Systems, Inc.

Inventor： Shankar Swaminathan ,  Jon Henri ,  Dennis Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi Kattige ,  Bart van Schravendijk ,  Andrew J. McKerrow

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/44 ,  C23C16/52

CPC classification number: H01L21/02123 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32412 ,  H01J2237/3321 ,  H01J2237/3365 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/76831 ,  H01L21/76898

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

Abstract translation: 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于在吸附和反应循环之间将杂质物质间歇地递送到膜。

公开(公告)号：US09076646B2

公开(公告)日：2015-07-07

申请号：US14144107

申请日：2013-12-30

Applicant: Lam Research Corporation

Inventor： James S. Sims ,  Jon Henri ,  Kathryn M. Kelchner ,  Sathish Babu S. V. Janjam ,  Shane Tang

IPC: H01L21/02 ,  C23C16/515 ,  C23C16/04 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/67 ,  H01L21/762 ,  H01L21/768 ,  H01L21/311

CPC classification number: H01L21/0217 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/515 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76829

Abstract: The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during the plasma exposure/conversion operation, the embodiments herein utilize a pulsed plasma during this operation to achieve a film with high quality sidewalls. Because conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls, this increased sidewall quality in the disclosed methods corresponds to a film that is overall more uniform in quality compared to that achieved with conventional continuous wave plasma techniques.

Abstract translation: 本文的实施例集中于使用脉冲等离子体的等离子体增强原子层沉积（PEALD）工艺。 虽然常规PEALD工艺在等离子体曝光/转换操作期间使用连续波等离子体，但是本文的实施例在此操作期间利用脉冲等离子体来实现具有高质量侧壁的膜。 因为传统的PEALD技术导致在特征的底部和顶部具有高质量的膜，而在侧壁上具有低质量，因此在所公开的方法中增加的侧壁质量对应于整体上在质量上更均匀的膜， 常规连续波等离子体技术。

公开(公告)号：US20150147483A1

公开(公告)日：2015-05-28

申请号：US14090750

申请日：2013-11-26

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa

IPC: C23C16/34 ,  C23C16/452 ,  C23C16/56 ,  C23C16/40

CPC classification number: C23C16/345 ,  C23C16/4554

Abstract: A method for forming a film on a patterned surface of a substrate by atomic layer deposition (ALD) processing includes: adsorbing onto a patterned surface a first precursor containing silicon or metal in its molecule; adsorbing onto the first-precursor-adsorbed surface a second precursor containing no silicon or metal in its molecule; exposing the second-precursor-adsorbed surface to an excited reactant to oxidize, nitride, or carbonize the precursors adsorbed on the surface of the substrate; and repeating the above cycle to form a film on the patterned surface of the substrate.

Abstract translation: 通过原子层沉积（ALD）处理在基板的图案化表面上形成膜的方法包括：在图案化表面上吸附分子中含有硅或金属的第一前体; 在其分子中吸附到第一前体吸附表面上的不含硅或金属的第二前体; 将第二前体吸附的表面暴露于被激发的反应物以氧化，氮化或碳化吸附在基底表面上的前体; 并重复上述循环以在衬底的图案化表面上形成膜。

公开(公告)号：US09012334B2

公开(公告)日：2015-04-21

申请号：US13396311

申请日：2012-02-14

Applicant: Sean M. Seutter ,  Michael X. Yang ,  Ming Xi

Inventor： Sean M. Seutter ,  Michael X. Yang ,  Ming Xi

IPC: H01L21/469 ,  C23C16/455 ,  C23C16/34 ,  C23C16/56 ,  H01L21/285 ,  H01L21/768

CPC classification number: C23C16/45553 ,  C23C16/34 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76844 ,  H01L21/76862

Abstract: A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer.

Abstract translation: 公开了一种在衬底上形成材料的方法。 在一个实施例中，该方法包括在设置在等离子体处理室中的衬底上形成氮化钽层，通过将衬底顺序地暴露于钽前体和氮前体，然后通过暴露衬底来降低氮化钽层的氮浓度 等离子体退火工艺。 随后在氮化钽层上沉积含金属的层。

公开(公告)号：US08882916B2

公开(公告)日：2014-11-11

申请号：US13070844

申请日：2011-03-24

Applicant: Takeshi Kumagai ,  Hitoshi Kato

Inventor： Takeshi Kumagai ,  Hitoshi Kato

IPC: C23C16/00 ,  C23C16/455

CPC classification number: C23C16/4554 ,  C23C16/401 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/4584

Abstract: In an disclosed film deposition method, after a film deposition-alteration step is carried out that includes a film deposition process where a Si containing gas is adsorbed on a wafer W and the adsorbed Si containing gas on the wafer is oxidized by supplying an O3 gas to the upper surface of the wafer, thereby producing a silicon oxide layer(s) by rotating a turntable on which the wafer is placed, and an alteration process where the silicon oxide layers) is altered by plasma, an alteration step where the silicon oxide layer(s) is altered by plasma while the Si containing gas is not supplied.

Abstract translation: 在所公开的膜沉积方法中，在进行膜沉积改变步骤之后，其中包括在晶片W上吸附含Si气体的膜沉积工艺，并且通过提供O 3气体来氧化晶片上吸附的含Si气体 到晶片的上表面，从而通过旋转其上放置晶片的转台和氧化硅层的改变工艺）通过等离子体改变来制造氧化硅层，其中氧化硅 在不提供含Si气体的情况下，层被等离子体改变。

公开(公告)号：US20140220260A1

公开(公告)日：2014-08-07

申请号：US14171928

申请日：2014-02-04

Applicant: Tokyo Electron Limited

Inventor： Jun Yamawaku ,  Chishio Koshimizu ,  Mitsuhiro Tachibana ,  Hitoshi Kato ,  Takeshi Kobayashi ,  Shigehiro Miura ,  Takafumi Kimura

IPC: C23C16/50

CPC classification number: C23C16/45519 ,  C23C16/4554 ,  C23C16/45551 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32733

Abstract: A substrate processing apparatus for performing a plasma process inside a vacuum chamber includes a turntable including substrate mounting portions for the substrates formed along a peripheral direction of the vacuum chamber to orbitally revolve these; a plasma generating gas supplying portion supplying a plasma generating gas into a plasma generating area; an energy supplying portion supplying energy to the plasma generating gas to change the plasma generating gas to plasma; a bias electrode provided on a lower side of the turntable to face the plasma generating area and leads ions in the plasma onto surfaces of the wafers; and an evacuation port evacuating the vacuum chamber, wherein the bias electrode extends from a rotational center of the turntable to an outer edge side, and a width of the bias electrode in a rotational direction is smaller than a distance between adjacent substrate mounting portions.

Abstract translation: 用于在真空室内进行等离子体处理的基板处理装置包括转盘，其包括基板安装部，用于沿着真空室的周向形成的基板，以对其进行轨道旋转; 等离子体产生气体供应部分，其将等离子体产生气体供应到等离子体产生区域中; 向所述等离子体发生气体供给能量以将所述等离子体产生气体变更为等离子体的能量供给部; 偏置电极，设置在转台的下侧以面对等离子体产生区域，并将等离子体中的离子引导到晶片的表面上; 以及将真空室抽出的排气口，其中偏置电极从转台的旋转中心延伸到外缘侧，偏置电极的旋转方向的宽度小于相邻的基板安装部之间的距离。

公开(公告)号：US20140209026A1

公开(公告)日：2014-07-31

申请号：US14243493

申请日：2014-04-02

Applicant: Novellus Systems, Inc.

Inventor： Adrien LaVoie ,  Mark J. Saly ,  Daniel Moser ,  Rajesh Odedra ,  Ravi Konjolia

IPC: C23C16/52

CPC classification number: C23C16/52 ,  C23C16/045 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31116 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76898

Abstract: An apparatus deposits a film on a substrate including a reaction chamber arranged on a substrate support. An inlet port delivers gas phase reactants to the reaction chamber. A plasma generator provides plasma to the reaction chamber. A controller is configured to flow a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, tris(dimethylamido)silylazide, and bis(tert-butylhydrazido)diethyl silane. The silicon-containing reactant is introduced in vapor phase into the reaction chamber. The controller flows a second reactant in vapor phase into the reaction chamber.

Abstract translation: 一种装置在包括布置在基板支撑件上的反应室的基板上沉积膜。 入口将气相反应物输送到反应室。 等离子体发生器将等离子体提供给反应室。 控制器被配置为使含硅反应物从由二叔丁基重氮基硅烷，三（二甲基氨基）甲硅烷基叠氮化物和双（叔丁基肼基）二乙基硅烷组成的前体基团流动。 将含硅反应物以气相导入反应室。 控制器将气相中的第二反应物流入反应室。

公开(公告)号：US20140084355A1

公开(公告)日：2014-03-27

申请号：US14099107

申请日：2013-12-06

Applicant: Micron Technology, Inc.

Inventor： Kie Y. Ahn ,  Leonard Forbes

IPC: H01L29/51 ,  H01L29/788

CPC classification number: H01L21/02192 ,  C23C16/40 ,  C23C16/45529 ,  C23C16/4554 ,  C23C16/45553 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/3142 ,  H01L21/31604 ,  H01L28/40 ,  H01L29/513 ,  H01L29/517 ,  H01L29/788 ,  H01L29/792

Abstract: Apparatus having a dielectric containing scandium and gadolinium can provide a reliable structure with a high dielectric constant (high k). In an embodiment, a monolayer or partial monolayer sequence process, such as for example atomic layer deposition (ALD), can be used to form a dielectric containing gadolinium oxide and scandium oxide. In an embodiment, a dielectric structure can be formed by depositing gadolinium oxide by atomic layer deposition onto a substrate surface using precursor chemicals, followed by depositing scandium oxide onto the substrate using precursor chemicals, and repeating to form a thin laminate structure. A dielectric containing scandium and gadolinium may be used as gate insulator of a MOSFET, a capacitor dielectric in a DRAM, as tunnel gate insulators in flash memories, as a NROM dielectric, or as a dielectric in other electronic devices, because the high dielectric constant (high k) of the film provides the functionality of a much thinner silicon dioxide film.

Abstract translation: 具有包含钪和钆的电介质的装置可以提供具有高介电常数（高k）的可靠结构。 在一个实施方案中，可以使用单层或部分单层序列方法，例如原子层沉积（ALD）来形成含氧化钆和氧化钪的电介质。 在一个实施例中，可以通过使用前体化学品将原子层沉积氧化钆沉积到衬底表面上，然后使用前体化学品将氧化钪沉积到衬底上并重复形成薄的层压结构来形成电介质结构。 含有钪和钆的电介质可用作MOSFET的栅极绝缘体，DRAM中的电容器电介质，作为NROM电介质的闪存中的隧道栅极绝缘体，或其它电子器件中的电介质，因为高介电常数 （高k）的膜提供了更薄的二氧化硅膜的功能。

公开(公告)号：US08646407B2

公开(公告)日：2014-02-11

申请号：US13530941

申请日：2012-06-22

Applicant: Hiroyuki Matsuura

Inventor： Hiroyuki Matsuura

IPC: C23C16/00 ,  C23C16/52 ,  C23C16/50 ,  C23C16/34 ,  C23C16/455

CPC classification number: C23C16/45525 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/4554 ,  C23C16/45546 ,  C23C16/507 ,  H01J37/32862

Abstract: A method is provided for using a film formation apparatus including a process container having an inner surface, which contains as a main component a material selected from the group consisting of quartz and silicon carbide. The method includes performing a film formation process to form a silicon nitride film on a product target substrate inside the process container, and then, unloading the product target substrate from the process container. Thereafter, the method includes supplying an oxidizing gas into the process container with no product target substrate accommodated therein, thereby performing an oxidation process to change by-product films deposited on the inner surface of the process container into a composition richer in oxygen than nitrogen, at a part of the by-product films from a surface thereof to a predetermined depth.

Abstract translation: 提供了一种使用成膜装置的方法，该成膜装置包括具有内表面的处理容器，该内表面含有选自石英和碳化硅的材料作为主要成分。 该方法包括进行成膜工艺以在处理容器内部的产品目标基材上形成氮化硅膜，然后从处理容器卸载产品目标衬底。 此后，该方法包括将氧化气体供应到处理容器中，其中没有容纳产品目标衬底，从而进行氧化处理以将沉积在处理容器内表面上的副产物膜变成比氮气更富氧的组合物， 在副产物膜的一部分从其表面到预定深度。