Abstract:
A pressure sensor including a lower substrate having two electrodes partially covered with a semiconductor layer and a piezoelectric layer made of a piezoelectric material, and in contact with the semiconductor layer in such a way that semiconductor material is in contact with the piezoelectric material and with the two electrodes, deposited thereon. The electrodes are intended to be connected to a voltage source or to a device for measuring the intensity of a current generated by the displacement of the electric charges in the semiconductor layer between the electrodes, said electric charges being created when a pressure is exerted on the piezoelectric layer.REPLACEMENT SHEET
Abstract:
A pressure transducer comprising a corrosion resistant metal diaphragm, having an active region, and capable of deflecting when a force is applied to the diaphragm; and a piezoresistive silicon-on-insulator sensor array disposed on a single substrate, the substrate secured to the diaphragm, the sensor array having a first outer sensor near an edge of the diaphragm at a first location and on the active region, a second outer sensor near an edge of the diaphragm at a second location and on the active region, and at least one center sensor substantially overlying a center of the diaphragm, the sensors connected in a bridge array to provide an output voltage proportional to the force applied to the diaphragm. The sensors are dielectrically isolated from the substrate.
Abstract:
A semiconductor physical quantity sensor includes (i) a semiconductor substrate having a first conductive type, (ii) a diaphragm portion disposed in the semiconductor substrate, (iii) a sensing portion disposed in the diaphragm portion, (iv) a well layer having a second conductive type, and (v) a back flow prevention element. The well layer is disposed in a surface portion of the semiconductor substrate, and corresponds to the diaphragm portion. The back flow prevention element is provided by a MOSFET, a JFET, a MESFET, or a HEMT. The back flow prevention element includes two second conductive diffused portions and a gate electrode. The back flow prevention element is arranged on a first electrical wiring, which provides a passage for applying a predetermined voltage to the well layer from an external circuit. The back flow prevention element turns on based on a voltage applied to the gate electrode.
Abstract:
The invention relates to a large-area extensible pressure sensor for textile surfaces, of the type comprising a support on which a conductive ink is printed which can transmit a printed electrical signal by any known printing technique. More specifically, the pressure sensor is characterised in that said support is flexible, extensible and elastic, and a plurality of main tracks of extensible and elastic conductive ink or paste are printed on said support; on said plurality of main tracks a plurality of piezoresistive paste or ink depositions acting as pressure sensing points are printed, and each of these depositions are linked to a secondary extensible and elastic conductive ink or paste track, which is also printed on said support, resulting in all tracks, primary or secondary, being connected to a control system without crossing each other.
Abstract:
A disclosed method of fabricating a hybrid nanopillar device includes forming a mask on a substrate and a layer of nanoclusters on the hard mask. The hard mask is then etched to transfer a pattern formed by the first layer of nanoclusters into a first region of the hard mask. A second nanocluster layer is formed on the substrate. A second region of the hard mask overlying a second region of the substrate is etched to create a second pattern in the hard mask. The substrate is then etched through the hard mask to form a first set of nanopillars in the first region of the substrate and a second set of nanopillars in the second region of the substrate. By varying the nanocluster deposition steps between the first and second layers of nanoclusters, the first and second sets of nanopillars will exhibit different characteristics.
Abstract:
There is provided a differential pressure sensor capable of measuring a pressure fluctuation with a simple structure. The differential pressure sensor includes a main body formed with an air chamber, and an opening that causes an interior of the air chamber to be in communication with an exterior, and a detector provided at the opening. The detector includes a cantilever provided in a manner tiltable so as to block off the opening, and the cantilever is formed with a Piezo resistor layer.
Abstract:
A single wire interface for a transducer transmits the transducer output as a frequency modulated signal over one single wire during one interval. During a second interval a reference signal is transmitted as a frequency modulated signal. Both the transducer output and the reference signal output are processed by the same circuitry during the respective intervals to provide both frequency modulated signals. The frequencies of the two signals are measured and then the ratio of the two periods which is the reciprocal of the two frequencies is calculated. This ratio is the direct measure of the output of the transducer and when provided eliminates sources of errors.
Abstract:
A multi-range pressure sensor apparatus and method that provide multiple signal paths for detecting a broad range of pressures with a high accuracy. A pressure transducer can be configured to include the use of a pressure sense die with piezoresistive elements integrated into the sensor die and in a Wheatstone bridge configuration. A sensed output signal from the sense die can be transferred to one or more amplifier circuits. A programmable compensation circuit can be utilized to multiplex different amplified output signals from each of the amplifier circuits and to provide a digital output. A memory associated with the programmable compensation circuit provides separate compensations, which are stored for each of the different signal paths and removes errors due to amplifier gain and offset.
Abstract:
A piezoresistive sensor chip element of a pressure sensor has lower face with an outer edge, an adhesion area and a non-adhesion area. The chip has a closed chip cavity for measuring the pressure of a medium flowing around the chip. The upper face of a substrate is fastened only at the adhesion area of the chip. The non-adhesion area extends at least over a circular area arranged centrally on the lower face and covers a third of the lower face's total area and extends over at least one connection area from the circular area to the edge of the lower face. The pressure in the pressure medium can spread through the connection area into a space under the non-adhesion area on the element lower face. The substrate has a recess located centrally under the sensor chip element.
Abstract:
There is disclosed a high pressure sensing header which is relatively insensitive to mounting torque. The header comprises an outer torque isolating shell which surrounds an inner “H” section header. The inner “H” section header has a thick diaphragm and is surrounded by the torque isolating shell which is secured to the “H” section header at a peripheral flange of the “H” section header. In this manner when the header is installed, the installation force is absorbed by the outer shell and there is no installation force or torque exhibited by the inner “H” section which will respond only to stress due to pressure. The torque isolating shell also contains a top surface which has a counterbore that accommodates a crush ring. When the unit is installed, the crush ring is crushed against an installation wall to enable the inner header to receive pressure without experiencing significant installation force.