PIEZOELECTRIC PRESSURE SENSOR
    21.
    发明申请
    PIEZOELECTRIC PRESSURE SENSOR 有权
    压电式压力传感器

    公开(公告)号:US20140191221A1

    公开(公告)日:2014-07-10

    申请号:US14178762

    申请日:2014-02-12

    Abstract: A pressure sensor including a lower substrate having two electrodes partially covered with a semiconductor layer and a piezoelectric layer made of a piezoelectric material, and in contact with the semiconductor layer in such a way that semiconductor material is in contact with the piezoelectric material and with the two electrodes, deposited thereon. The electrodes are intended to be connected to a voltage source or to a device for measuring the intensity of a current generated by the displacement of the electric charges in the semiconductor layer between the electrodes, said electric charges being created when a pressure is exerted on the piezoelectric layer.REPLACEMENT SHEET

    Abstract translation: 一种压力传感器,包括具有部分地被半导体层覆盖的两个电极的下基板和由压电材料制成的压电层,并且与半导体层接触,使得半导体材料与压电材料接触,并且与 两个电极沉积在其上。 电极旨在连接到电压源或用于测量由电极之间的半导体层中的电荷的位移产生的电流的强度的装置,所述电荷是当压力施加在电极上时产生的 压电层。 更换表

    Corrosion-resistant high temperature pressure transducer employing a metal diaphragm
    22.
    发明授权
    Corrosion-resistant high temperature pressure transducer employing a metal diaphragm 有权
    采用金属隔膜的耐腐蚀高温压力传感器

    公开(公告)号:US08723635B2

    公开(公告)日:2014-05-13

    申请号:US13953465

    申请日:2013-07-29

    Applicant: Nora Kurtz

    Inventor: Anthony D. Kurtz

    CPC classification number: G01L9/04 G01L9/0055 G01L9/06

    Abstract: A pressure transducer comprising a corrosion resistant metal diaphragm, having an active region, and capable of deflecting when a force is applied to the diaphragm; and a piezoresistive silicon-on-insulator sensor array disposed on a single substrate, the substrate secured to the diaphragm, the sensor array having a first outer sensor near an edge of the diaphragm at a first location and on the active region, a second outer sensor near an edge of the diaphragm at a second location and on the active region, and at least one center sensor substantially overlying a center of the diaphragm, the sensors connected in a bridge array to provide an output voltage proportional to the force applied to the diaphragm. The sensors are dielectrically isolated from the substrate.

    Abstract translation: 一种压力传感器,包括具有有源区域的耐腐蚀金属隔膜,并且当向隔膜施加力时能够偏转; 以及设置在单个衬底上的压电硅绝缘体上传感器阵列,所述衬底固定到所述隔膜上,所述传感器阵列在第一位置处和所述有源区域上具有靠近所述隔膜的边缘的第一外部传感器,所述第二外部传感器阵列 在第二位置和有源区域附近的隔膜的边缘附近的传感器以及基本上覆盖隔膜的中心的至少一个中心传感器,所述传感器以桥式阵列连接以提供与施加到所述隔膜的力成比例的输出电压 隔膜 传感器与基板介电隔离。

    SEMICONDUCTOR PHYSICAL QUANTITY SENSOR AND METHOD FOR MANUFACTURING THE SAME
    23.
    发明申请
    SEMICONDUCTOR PHYSICAL QUANTITY SENSOR AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体物理量传感器及其制造方法

    公开(公告)号:US20140042497A1

    公开(公告)日:2014-02-13

    申请号:US13957738

    申请日:2013-08-02

    Abstract: A semiconductor physical quantity sensor includes (i) a semiconductor substrate having a first conductive type, (ii) a diaphragm portion disposed in the semiconductor substrate, (iii) a sensing portion disposed in the diaphragm portion, (iv) a well layer having a second conductive type, and (v) a back flow prevention element. The well layer is disposed in a surface portion of the semiconductor substrate, and corresponds to the diaphragm portion. The back flow prevention element is provided by a MOSFET, a JFET, a MESFET, or a HEMT. The back flow prevention element includes two second conductive diffused portions and a gate electrode. The back flow prevention element is arranged on a first electrical wiring, which provides a passage for applying a predetermined voltage to the well layer from an external circuit. The back flow prevention element turns on based on a voltage applied to the gate electrode.

    Abstract translation: 半导体物理量传感器包括(i)具有第一导电类型的半导体衬底,(ii)设置在半导体衬底中的隔膜部分,(iii)设置在隔膜部分中的感测部分,(iv)具有 第二导电类型,和(v)防逆流元件。 阱层设置在半导体衬底的表面部分中,并且对应于膜片部分。 背面防流体元件由MOSFET,JFET,MESFET或HEMT提供。 防回流元件包括两个第二导电扩散部分和栅电极。 后防流体元件布置在第一电线上,其提供从外部电路向阱层施加预定电压的通道。 背流防止元件基于施加到栅电极的电压而导通。

    Large-Area Extensible Pressure Sensor for Textiles Surfaces
    24.
    发明申请
    Large-Area Extensible Pressure Sensor for Textiles Surfaces 有权
    用于纺织品表面的大面积可扩展压力传感器

    公开(公告)号:US20140007704A1

    公开(公告)日:2014-01-09

    申请号:US13934301

    申请日:2013-07-03

    CPC classification number: G01L1/18 G01L1/20 G01L9/0052 G01L9/06

    Abstract: The invention relates to a large-area extensible pressure sensor for textile surfaces, of the type comprising a support on which a conductive ink is printed which can transmit a printed electrical signal by any known printing technique. More specifically, the pressure sensor is characterised in that said support is flexible, extensible and elastic, and a plurality of main tracks of extensible and elastic conductive ink or paste are printed on said support; on said plurality of main tracks a plurality of piezoresistive paste or ink depositions acting as pressure sensing points are printed, and each of these depositions are linked to a secondary extensible and elastic conductive ink or paste track, which is also printed on said support, resulting in all tracks, primary or secondary, being connected to a control system without crossing each other.

    Abstract translation: 本发明涉及一种用于织物表面的大面积可伸展压力传感器,其类型包括其上印刷导电油墨的支撑件,其可以通过任何已知的印刷技术传输印刷的电信号。 更具体地,压力传感器的特征在于,所述支撑件是柔性的,可延展的和弹性的,并且在所述支撑件上印刷多个可扩展和弹性导电油墨或糊状物的主轨道; 在所述多个主轨道上印刷多个压敏粘合剂或作为压力感测点的油墨沉积,并且这些沉积物中的每一个连接到也被印刷在所述载体上的第二可伸展和弹性的导电油墨或糊料轨道,导致 在所有轨道中,主要或次要的,连接到控制系统而不相互交叉。

    APPLICATIONS FOR NANOPILLAR STRUCTURES
    25.
    发明申请
    APPLICATIONS FOR NANOPILLAR STRUCTURES 有权
    应用于纳米结构

    公开(公告)号:US20140001432A1

    公开(公告)日:2014-01-02

    申请号:US13539070

    申请日:2012-06-29

    Abstract: A disclosed method of fabricating a hybrid nanopillar device includes forming a mask on a substrate and a layer of nanoclusters on the hard mask. The hard mask is then etched to transfer a pattern formed by the first layer of nanoclusters into a first region of the hard mask. A second nanocluster layer is formed on the substrate. A second region of the hard mask overlying a second region of the substrate is etched to create a second pattern in the hard mask. The substrate is then etched through the hard mask to form a first set of nanopillars in the first region of the substrate and a second set of nanopillars in the second region of the substrate. By varying the nanocluster deposition steps between the first and second layers of nanoclusters, the first and second sets of nanopillars will exhibit different characteristics.

    Abstract translation: 公开的制造混合纳米柱装置的方法包括在基底上形成掩模和硬掩模上的纳米团簇层。 然后蚀刻硬掩模以将由第一层纳米团簇形成的图案转移到硬掩模的第一区域中。 在基板上形成第二纳米团簇层。 蚀刻覆盖衬底的第二区域的硬掩模的第二区域,以在硬掩模中产生第二图案。 然后将衬底通过硬掩模蚀刻以在衬底的第一区域中形成第一组纳米柱,并在衬底的第二区域中形成第二组纳米柱。 通过改变第一和第二层纳米团簇之间的纳米团簇沉积步骤,第一组和第二组纳米颗粒将呈现不同的特征。

    Signal transmission system
    27.
    发明授权

    公开(公告)号:US08584527B2

    公开(公告)日:2013-11-19

    申请号:US13252840

    申请日:2011-10-04

    Inventor: Wolf S. Landmann

    CPC classification number: G01V3/18 G01L9/00 G01L9/02 G01L9/06 G01L9/065

    Abstract: A single wire interface for a transducer transmits the transducer output as a frequency modulated signal over one single wire during one interval. During a second interval a reference signal is transmitted as a frequency modulated signal. Both the transducer output and the reference signal output are processed by the same circuitry during the respective intervals to provide both frequency modulated signals. The frequencies of the two signals are measured and then the ratio of the two periods which is the reciprocal of the two frequencies is calculated. This ratio is the direct measure of the output of the transducer and when provided eliminates sources of errors.

    Multi range pressure sensor apparatus and method utilizing a single sense die and multiple signal paths
    28.
    发明授权
    Multi range pressure sensor apparatus and method utilizing a single sense die and multiple signal paths 有权
    多范围压力传感器装置和方法利用单个感测管芯和多个信号路径

    公开(公告)号:US08490496B2

    公开(公告)日:2013-07-23

    申请号:US13069127

    申请日:2011-03-22

    Applicant: Ian Bentley

    Inventor: Ian Bentley

    CPC classification number: G01L9/06 G01L19/02

    Abstract: A multi-range pressure sensor apparatus and method that provide multiple signal paths for detecting a broad range of pressures with a high accuracy. A pressure transducer can be configured to include the use of a pressure sense die with piezoresistive elements integrated into the sensor die and in a Wheatstone bridge configuration. A sensed output signal from the sense die can be transferred to one or more amplifier circuits. A programmable compensation circuit can be utilized to multiplex different amplified output signals from each of the amplifier circuits and to provide a digital output. A memory associated with the programmable compensation circuit provides separate compensations, which are stored for each of the different signal paths and removes errors due to amplifier gain and offset.

    Abstract translation: 一种多范围压力传感器装置和方法,其提供用于以高精度检测宽范围的压力的多个信号路径。 压力传感器可以被配置为包括使用集成到传感器管芯中的压阻元件和惠斯通电桥配置的压力感测管芯。 来自感测管芯的感测输出信号可以被传送到一个或多个放大器电路。 可编程补偿电路可用于对来自每个放大器电路的不同放大输出信号进行复用,并提供数字输出。 与可编程补偿电路相关联的存储器提供单独的补偿,其针对每个不同的信号路径存储,并且消除由于放大器增益和偏移引起的误差。

    PRESSURE SENSOR HAVING A PIEZORESISTIVE SENSOR CHIP ELEMENT
    29.
    发明申请
    PRESSURE SENSOR HAVING A PIEZORESISTIVE SENSOR CHIP ELEMENT 有权
    具有传感器芯片元件的压力传感器

    公开(公告)号:US20130167650A1

    公开(公告)日:2013-07-04

    申请号:US13819450

    申请日:2011-08-29

    Abstract: A piezoresistive sensor chip element of a pressure sensor has lower face with an outer edge, an adhesion area and a non-adhesion area. The chip has a closed chip cavity for measuring the pressure of a medium flowing around the chip. The upper face of a substrate is fastened only at the adhesion area of the chip. The non-adhesion area extends at least over a circular area arranged centrally on the lower face and covers a third of the lower face's total area and extends over at least one connection area from the circular area to the edge of the lower face. The pressure in the pressure medium can spread through the connection area into a space under the non-adhesion area on the element lower face. The substrate has a recess located centrally under the sensor chip element.

    Abstract translation: 压力传感器的压阻传感器芯片元件具有具有外边缘,粘附区域和非粘附区域的下表面。 该芯片具有封闭的芯片空腔,用于测量流过芯片的介质的压力。 基板的上表面仅紧固在芯片的粘附区域。 非粘附区域至少在布置在下表面中心的圆形区域上延伸并且覆盖下表面总面积的三分之一并且在从圆形区域到下表面的边缘的至少一个连接区域上延伸。 压力介质中的压力可通过连接区域扩散到元件下表面上的非粘附区域下方的空间。 衬底具有位于传感器芯片元件下方中心的凹部。

    TORQUE INSENSITIVE HEADER ASSEMBLY
    30.
    发明申请
    TORQUE INSENSITIVE HEADER ASSEMBLY 有权
    扭矩敏感头组件

    公开(公告)号:US20120318068A1

    公开(公告)日:2012-12-20

    申请号:US13595057

    申请日:2012-08-27

    CPC classification number: G01L7/08 G01L9/0051 G01L9/0055 G01L9/06

    Abstract: There is disclosed a high pressure sensing header which is relatively insensitive to mounting torque. The header comprises an outer torque isolating shell which surrounds an inner “H” section header. The inner “H” section header has a thick diaphragm and is surrounded by the torque isolating shell which is secured to the “H” section header at a peripheral flange of the “H” section header. In this manner when the header is installed, the installation force is absorbed by the outer shell and there is no installation force or torque exhibited by the inner “H” section which will respond only to stress due to pressure. The torque isolating shell also contains a top surface which has a counterbore that accommodates a crush ring. When the unit is installed, the crush ring is crushed against an installation wall to enable the inner header to receive pressure without experiencing significant installation force.

    Abstract translation: 公开了一种对安装扭矩相对不敏感的高压感测头。 头部包括围绕内部H部分头部的外部扭矩隔离壳体。 内部H部分头部具有厚的隔膜,并被扭矩隔离壳围绕,该扭矩隔离壳体在H部分头部的周边凸缘处固定到H部分头部。 以这种方式,当安装头部时,安装力被外壳吸收,并且没有由内部H部分表现出的安装力或扭矩,其仅响应于由于压力引起的应力。 扭矩隔离壳体还包括具有容纳压溃环的沉孔的顶表面。 当装置安装时,挤压环被压在安装壁上,以使内部集管接收压力,而不会受到显着的安装力。

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