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公开(公告)号:US20130012014A1
公开(公告)日:2013-01-10
申请号:US13178276
申请日:2011-07-07
申请人: Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu
发明人: Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu
IPC分类号: H01L21/28
CPC分类号: H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0345 , H01L2224/036 , H01L2224/03632 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05564 , H01L2224/05572 , H01L2224/05647 , H01L2224/11424 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/13007 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2924/00014 , H01L2924/01029 , H01L2924/12042 , H01L2924/04941 , H01L2924/04953 , H01L2924/014 , H01L2924/01047 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要: A method includes forming an under-bump metallurgy (UBM) layer overlying a substrate, and forming a mask overlying the UBM layer. The mask covers a first portion of the UBM layer, and a second portion of the UBM layer is exposed through an opening in the mask. A metal bump is formed in the opening and on the second portion of the UBM layer. The mask is then removed. A laser removal is performed to remove a part of the first portion of the UBM layer and to form an UBM.
摘要翻译: 一种方法包括形成覆盖衬底的凸起下金属(UBM)层,以及形成覆盖UBM层的掩模。 掩模覆盖UBM层的第一部分,并且UBM层的第二部分通过掩模中的开口暴露。 在UBM层的开口和第二部分上形成金属凸块。 然后取下面具。 执行激光去除以去除UBM层的第一部分的一部分并形成UBM。