公开(公告)号：US07692707B2

公开(公告)日：2010-04-06

申请号：US11632964

申请日：2005-07-20

申请人： Yasushi Kondo ,  Hiromasa Maruno

发明人： Yasushi Kondo ,  Hiromasa Maruno

IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N5/217

CPC分类号： H04N5/3725 ,  H01L27/14806 ,  H01L27/14837 ,  H01L27/1485

摘要： In a solid-state image sensor according to this invention, an image signal temperature variation suppressing unit changes a voltage value of a driver voltage applied to multiplying registers in response to variations in sensor temperature of a CCD image sensor. Thus, a charge multiplication gain of a charge multiplying unit is electrically controlled to suppress variations in signal strength of image signals due to the variations in the sensor temperature of the CCD image sensor. As a result, without relying on thermal control with which it is very difficult to realize high precision control, variations in the signal strength of the image signals due to the variations in the sensor temperature of the CCD image sensor are suppressed easily by controlling the charge multiplication gain of the charge multiplying unit based on the electric control, with which it is very easy to realize high precision control, performed by the image signal temperature variation suppressing unit in response to the variations in the sensor temperature of the CCD image sensor.

摘要翻译： 在根据本发明的固态图像传感器中，图像信号温度变化抑制单元响应于CCD图像传感器的传感器温度的变化而改变施加到乘法寄存器的驱动器电压的电压值。 因此，电荷乘法单元的电荷倍增增益被电控制，以抑制由于CCD图像传感器的传感器温度的变化引起的图像信号的信号强度的变化。 结果，不依赖于难于实现高精度控制的热控制，由于CCD图像传感器的传感器温度的变化导致的图像信号的信号强度的变化容易地通过控制电荷 根据CCD图像传感器的传感器温度的变化，基于由图像信号温度变化抑制单元执行的电气控制的非常容易实现高精度控制的电荷乘法单元的乘法增益。

公开(公告)号：US07550393B2

公开(公告)日：2009-06-23

申请号：US11046957

申请日：2005-01-31

申请人： Hee-Geun Jeong

发明人： Hee-Geun Jeong

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L27/14818 ,  H01L27/14837 ,  H04N5/3595

摘要： A solid-state imaging device includes a light sensor formed in a semiconductor substrate. In addition, the solid-state imaging device includes a light block layer with an opening formed through the light block layer over at least a portion of the light sensor. Furthermore, at least one sidewall of the light block layer facing the opening is concave shaped for reducing smear phenomenon.

摘要翻译： 固态成像装置包括形成在半导体衬底中的光传感器。 此外，固态成像装置包括在光传感器的至少一部分上具有通过光阻挡层形成的开口的光阻挡层。 此外，面向开口的光阻挡层的至少一个侧壁是凹形的，用于减少拖尾现象。

公开(公告)号：US07521335B2

公开(公告)日：2009-04-21

申请号：US11245251

申请日：2005-10-06

申请人： Hideo Yamanaka

发明人： Hideo Yamanaka

IPC分类号： H01L21/30

CPC分类号： H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14692 ,  H01L27/14837 ,  H01L27/14843 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/16225 ,  H01L2224/45144 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/05099

摘要： A method for producing an ultra-thin semiconductor chip and an ultra-thin back-illuminated solid-state image pickup device utilizing a semiconductor layer formed on a support substrate via an insulating layer to improve separation performance of a semiconductor layer from a support substrate and thereby improve the productivity and quality. The method uses two porous peeling layers on opposite sides of a substrate to produce an ultra-thin substrate.

摘要翻译： 一种用于制造超薄半导体芯片的方法和利用经由绝缘层形成在支撑基板上的半导体层的超薄背照式固态图像拾取装置，以改善半导体层与支撑基板的分离性能，以及 从而提高生产力和质量。 该方法在衬底的相对侧上使用两个多孔剥离层以产生超薄衬底。

公开(公告)号：US20080303933A1

公开(公告)日：2008-12-11

申请号：US11632964

申请日：2005-07-20

申请人： Yasushi Kondo ,  Hiromasa Maruno

发明人： Yasushi Kondo ,  Hiromasa Maruno

IPC分类号： H04N5/335

CPC分类号： H04N5/3725 ,  H01L27/14806 ,  H01L27/14837 ,  H01L27/1485

摘要： In a solid-state image sensor according to this invention, an image signal temperature variation suppressing unit changes a voltage value of a driver voltage applied to multiplying registers in response to varations in sensor temperature of a CCD image sensor. Thus, a charge multiplication gain of a charge multiplying unit is electrically controlled to supress varations in signal strength of image signals due to the variations in the sensor temperature of the CCD image sensor. As a result, without relying on thermal control with which it is very diffcult to realize high precision control, varations in the signal stregth of the image signals due to the varations in the sensor temperature of the CCD image sensor are suppressed easily by controlling the charge multiplication gain of the charge multiplying unit based on the electric control, with which it is very easy to realize high precision control, performed by the image signal temperature variation suppressing unit in response to the variations in the sensor temperature of the CCD image sensor.

摘要翻译： 在根据本发明的固态图像传感器中，图像信号温度变化抑制单元响应于CCD图像传感器的传感器温度的变化而改变施加到乘法寄存器的驱动器电压的电压值。 因此，由于CCD图像传感器的传感器温度的变化，电荷乘法单元的电荷倍增增益被电控制以抑制图像信号的信号强度的变化。 结果，不依赖于非常难以实现高精度控制的热控制，由于CCD图像传感器的传感器温度的变化导致的图像信号的信号的变化由容易地抑制， 根据CCD图像传感器的传感器温度的变化，基于由图像信号温度变化抑制单元执行的电气控制的非常容易实现高精度控制的电荷乘法单元的乘法增益。

公开(公告)号：US20080266437A1

公开(公告)日：2008-10-30

申请号：US12168191

申请日：2008-07-07

申请人： Joseph R. Summa ,  Herbert J. Erhardt

发明人： Joseph R. Summa ,  Herbert J. Erhardt

IPC分类号： H04N3/14

CPC分类号： H01L27/14625 ,  H01L27/14837 ,  H04N9/045

摘要： An image sensor includes at least first and second photo-sensitive regions; a color filter array having at least two different colors that selectively absorb specific bands of wavelengths, and the two colors respectively span portions of predetermined photo-sensitive regions; and wherein the two photo sensitive regions are doped so that electrons that are released at two different depths in the substrate are collected in two separate regions of the photo sensitive regions so that, when wavelengths of light pass through the color filter array, light is absorbed by the photo sensitive regions which photo sensitive regions consequently releases electrons at two different depths of the photo sensitive regions and are stored in first and second separate regions; at least two charge-coupled devices adjacent the first photo sensitive regions; and a first transfer gate associated with the first photo sensitive region that selectively passes charge at first and second levels which, when at the first level, causes the charge stored in the first region to be passed to one of its associated charge-coupled devices, and when the transfer gate is at the second level, charge stored in the second region is passed to one of the associated charge-coupled devices.

公开(公告)号：US20080265288A1

公开(公告)日：2008-10-30

申请号：US12168186

申请日：2008-07-07

申请人： Joseph R. Summa ,  Herbert J. Erhardt

发明人： Joseph R. Summa ,  Herbert J. Erhardt

IPC分类号： H01L27/148

CPC分类号： H01L27/14625 ,  H01L27/14837 ,  H04N9/045

摘要： An image sensor includes at least first and second photo-sensitive regions; a color filter array having at least two different colors that selectively absorb specific bands of wavelengths, and the two colors respectively span portions of predetermined photo-sensitive regions; and wherein the two photo sensitive regions are doped so that electrons that are released at two different depths in the substrate are collected in two separate regions of the photo sensitive regions so that, when wavelengths of light pass through the color filter array, light is absorbed by the photo sensitive regions which photo sensitive regions consequently releases electrons at two different depths of the photo sensitive regions and are stored in first and second separate regions; at least two charge-coupled devices adjacent the first photo sensitive regions; and a first transfer gate associated with the first photo sensitive region that selectively passes charge at first and second levels which, when at the first level, causes the charge stored in the first region to be passed to one of its associated charge-coupled devices, and when the transfer gate is at the second level, charge stored in the second region is passed to one of the associated charge-coupled devices.

摘要翻译： 图像传感器至少包括第一和第二光敏区域; 具有选择性地吸收特定波段的至少两种不同颜色的滤色器阵列，并且两种颜色分别跨越预定光敏区域的部分; 并且其中两个光敏区域被掺杂，使得在衬底中在两个不同深度释放的电子被收集在光敏区域的两个分开的区域中，使得当光的波长通过滤色器阵列时，光被吸收 通过光敏区域，这些光敏区域因此在光敏区域的两个不同深度处释放电子并且被存储在第一和第二分离区域中; 至少两个与第一光敏区相邻的电荷耦合器件; 以及与第一光敏区相关联的第一传输门，其选择性地在第一和第二电平通过电荷，当处于第一电平时，使第一区域中存储的电荷通过其相关联的电荷耦合器件中的一个， 并且当传输门处于第二电平时，存储在第二区域中的电荷被传递到相关联的电荷耦合器件中的一个。

公开(公告)号：US20080117322A1

公开(公告)日：2008-05-22

申请号：US11941124

申请日：2007-11-16

申请人： Nobuyuki TOKUOKA

发明人： Nobuyuki TOKUOKA

IPC分类号： H04N5/335

CPC分类号： H04N5/335 ,  H01L27/14837

摘要： Disclosed are an image pickup device and an imaging apparatus using the image pickup device. The image pickup device a photodiode for converting incident light to electric charge and generate a signal charge corresponding to an intensity of the incident light, a CCD cell for accumulatively storing respective signal charges generated from the photodiode, and transferring the signal charges to outside. In the image pickup device, a light-receptor board formed with the photodiode and a CCD-cell board formed with the CCD cell are arranged separately from each other and electrically connected to each other.

摘要翻译： 公开了一种图像拾取装置和使用图像拾取装置的成像装置。 图像拾取装置用于将入射光转换为电荷并产生与入射光强度相对应的信号电荷的光电二极管，用于累积存储从光电二极管产生的各信号电荷的CCD单元，并将信号电荷传送到外部。 在图像拾取装置中，形成有光电二极管的光接收器板和形成有CCD单元的CCD单元板彼此分离地彼此电连接。

公开(公告)号：US20070165128A1

公开(公告)日：2007-07-19

申请号：US11621276

申请日：2007-01-09

申请人： Yoshiaki KATO

发明人： Yoshiaki KATO

IPC分类号： H04N5/335

CPC分类号： H01L27/14887 ,  H01L27/14837 ,  H01L27/14843 ,  H04N5/3592 ,  H04N5/3728

摘要： To provide a solid-state imaging apparatus which is capable of preventing electric charge from being injected from a semiconductor substrate while electric charge is being accumulated into photodiodes. The solid-state imaging apparatus includes a solid-state imaging device and a driving pulse control unit. The solid-state imaging device includes: a semiconductor substrate, photodiodes which are two-dimensionally formed on the semiconductor substrate, and vertical Charge-coupled devices (CCDs) having at least one arranged read-out gate and non-read-out gate for each of the photodiodes, the read-out gate being for reading out accumulated electric charge from the associated photodiode, and the non-read-out gate being not for reading out accumulated electric charge from the associated photodiode. The driving pulse control unit applies driving pulses sequentially to the respective read-out gates in order to change the read-out gates from stand-by LOW-voltage states to MIDDLE-voltage states, and apply a driving pulse for maintaining a LOW-voltage state of at least one of non-read-out gates adjacent to a last read-out gate in the order of the change among the non-read-out gates, during the change starting with a first read-out gate and ending with the last read-out gate.

摘要翻译： 提供一种固态成像装置，其能够在电荷积聚到光电二极管中时防止从半导体衬底注入电荷。 固态成像装置包括固态成像装置和驱动脉冲控制单元。 固态成像装置包括：半导体衬底，二维地形成在半导体衬底上的光电二极管以及具有至少一个布置的读出栅极和非读出栅极的垂直电荷耦合器件（CCD） 每个光电二极管，读出门用于从相关联的光电二极管读出累积的电荷，并且非读出门不用于从相关联的光电二极管读出累积的电荷。 驱动脉冲控制单元将驱动脉冲顺序地施加到各个读出门，以便将读出门从待机低电压状态改变为中等电压状态，并施加用于维持低电压的驱动脉冲 在从第一读出门开始的改变期间，以非读出门的改变的顺序，与最后的读出门相邻的非读出门中的至少一个的状态， 最后一个读出门。

公开(公告)号：US20070015301A1

公开(公告)日：2007-01-18

申请号：US11182310

申请日：2005-07-14

申请人： David Wen ,  Xinqiao Liu ,  Ahn Vu ,  Steven Onishi

发明人： David Wen ,  Xinqiao Liu ,  Ahn Vu ,  Steven Onishi

IPC分类号： H01L21/00

CPC分类号： H01L27/14812 ,  H01L27/14837 ,  H01L31/03529

摘要： A light sensor having a light conversion element between first and second electrodes is disclosed. The light conversion element includes a body of semiconductor material having first and second surfaces. The body of semiconductor material is of a first conductivity type and has doping elements in a concentration gradient that creates a first electrostatic field having a magnitude that varies monotonically from the first surface to the second surface. A bias circuit applies a variable potential between the first and second electrodes to create a second electrostatic field having a direction opposite to that of the first electrostatic field and a magnitude determined by the potential. One of the electrodes is transparent to light in a predetermined band of wavelengths. The body of semiconductor material can include an epitaxial body having a monotonically increasing concentration of a doping element as a function of the distance from one the surfaces.

摘要翻译： 公开了一种在第一和第二电极之间具有光转换元件的光传感器。 光转换元件包括具有第一和第二表面的半导体材料体。 半导体材料的主体是第一导电类型，并且具有浓度梯度的掺杂元素，其产生具有从第一表面到第二表面单调变化的幅度的第一静电场。 偏置电路在第一和第二电极之间施加可变电位以产生具有与第一静电场的方向相反的方向的第二静电场和由电位确定的幅度。 其中一个电极对于预定波段的光是透明的。 半导体材料的主体可以包括外延体，其具有作为距离一个表面的距离的函数的单调递增的掺杂元素的浓度。

公开(公告)号：US06480226B1

公开(公告)日：2002-11-12

申请号：US08423903

申请日：1995-04-18

申请人： Koji Takahashi ,  Kenji Kyuma

发明人： Koji Takahashi ,  Kenji Kyuma

IPC分类号： H04N314

CPC分类号： H04N5/2353 ,  H01L27/14818 ,  H01L27/14837 ,  H01L27/14843 ,  H01L27/1485 ,  H04N5/235 ,  H04N5/243

摘要： An image pickup apparatus which can produce an image provided with exposure suitable for both a backlighted object and its background without requiring a mechanical member, such as an iris or the like. The image pickup apparatus has a photoelectric conversion section for photoelectrically converting a light image so as to accumulate light information and to output the light information every unit light accumulation period which forms one picture. A digital camera signal processing circuit processes an output from the photoelectric conversion section to output a video signal. A timing signal generator outputs a plurality of timing signals for setting light information accumulation time every unit light accumulation period which is set in the photoelectric conversion section. An image analyzing circuit selects one of the timing signals output from the timing signal generator correspondingly with higher luminance and lower luminance regions based on luminance information from the digital camera signal processing circuit and inputs the selected timing signal into the photoelectric conversion section.

摘要翻译： 一种能够产生具有适合于背光物体及其背景的曝光的图像的图像拾取装置，而不需要诸如虹膜等的机械构件。 图像拾取装置具有光电转换部分，用于对光图像进行光电转换以累积光信息，并且在形成一个图像的每单位光累积期间输出光信息。 数字照相机信号处理电路处理来自光电转换部分的输出以输出视频信号。 定时信号发生器输出用于设置光信息累积时间的多个定时信号，每个单位光累积周期设置在光电转换部分中。 基于来自数字照相机信号处理电路的亮度信息，图像分析电路根据高亮度和较低亮度区域对应地从定时信号发生器输出的定时信号中的一个输入，并将所选定时信号输入到光电转换部分。