公开(公告)号：US4346988A

公开(公告)日：1982-08-31

申请号：US091777

申请日：1979-11-06

申请人： Hiroyuki Kimura ,  Shuichi Tamura ,  Hideo Yokota

发明人： Hiroyuki Kimura ,  Shuichi Tamura ,  Hideo Yokota

IPC分类号： G01C3/06 ,  G01C3/00 ,  G01S17/46 ,  G02B7/32 ,  G01C5/00 ,  H01L9/00

CPC分类号： G01S17/48

摘要： A distance measuring device having a light projector and a light receptor, at least one of which is caused to move so that when the intersection of their optical paths is disposed at an object, its coincidence is detected by the signal generated in the light receptor for measuring the distance from the device to the object based on the triangulation. In order to obtain a clear peak signal, according to the invention, for the light source, use is made of a light energy distribution characteristic which is higher at the marginal zone than at the central zone.

摘要翻译： 一种具有光投射器和光接收器的距离测量装置，其中至少一个被移动，使得当它们的光路的交点设置在物体上时，其重合通过在光接收器中产生的信号来检测， 基于三角测量来测量从设备到物体的距离。 为了获得清晰的峰值信号，根据本发明，对于光源，使用在边缘区域比在中心区域更高的光能分布特性。

公开(公告)号：US4074143A

公开(公告)日：1978-02-14

申请号：US666981

申请日：1976-03-15

申请人： George H. S. Rokos

发明人： George H. S. Rokos

IPC分类号： H01L31/12 ,  H01L31/14 ,  H01L33/00 ,  H03K3/42 ,  H03K17/785 ,  G01J1/32 ,  H01L9/00

CPC分类号： H01L31/14 ,  H01L33/00 ,  H03K17/785 ,  H03K3/42 ,  Y10S136/291

摘要： An optoelectronic device comprising a light-sensitive device which produces or modifies an electric current in dependence upon the intensity of light incident thereon, and a light-emitting device arranged to emit light in response to said electric current and so disposed that part of said emitted light is incident upon the light-sensitive device to provide positive feedback.

摘要翻译： 一种光电器件，包括根据入射到其上的光的强度产生或修改电流的光敏器件;以及发光器件，被布置为响应于所述电流而发光，并且被布置成使得所述发射 光入射到感光装置上，以提供正面反馈。

公开(公告)号：US3881179A

公开(公告)日：1975-04-29

申请号：US28313172

申请日：1972-08-23

申请人： MOTOROLA INC

发明人： HOWARD JR WILLIAM G

IPC分类号： H01L21/00 ,  H01L21/74 ,  H01L29/866 ,  H01L9/00

CPC分类号： H01L29/866 ,  H01L21/00 ,  H01L21/74

摘要： The zener diode structure is fabricated by standard monolithic processes and provides a constant reference voltage for driving a high impedance load. The diode includes an anode element provided by P-type diffusion into an epitaxial layer. Electrical connections between the anode and the surface terminals of the device are provided by ''''base'''' diffusion. A cathode element is formed by an ''''emitter'''' diffusion which extends from the surface of the epitaxial layer, into the base diffusion, and borders the anode to form an anode-to-cathode junction. Since the base diffusion has a higher resistivity than the anode-to-cathode junction, buried breakdown occurs at the anode-to-cathode junction. The drive current for the zener is conducted by a path between a first anode terminal, which is connected to the base diffusion, and the cathode terminal. The constant reference voltage is developed between a second anode terminal, which is also connected to the base diffusion, and the cathode terminal.

摘要翻译： 齐纳二极管结构通过标准单片工艺制造，并为驱动高阻抗负载提供恒定的参考电压。 二极管包括通过P型扩散提供给外延层的阳极元件。 阳极和器件的表面端子之间的电连接由“基极”扩散提供。 阴极元件由从外延层的表面延伸到基底扩散中的“发射极”扩散形成，并与阳极接合以形成阳极至阴极结。 由于基极扩散具有比阳极至阴极结更高的电阻率，所以在阳极至阴极结处发生掩埋击穿。 用于齐纳二极管的驱动电流由连接到基极扩散部的第一阳极端子与阴极端子之间的路径进行。 恒定参考电压在也连接到基极扩散的第二阳极端子和阴极端子之间产生。

公开(公告)号：US3852795A

公开(公告)日：1974-12-03

申请号：US32078473

申请日：1973-01-03

申请人： IBM

发明人： AMES I

IPC分类号： H01L39/02 ,  H01L39/22 ,  H01L9/00 ,  H01L3/00

CPC分类号： H01L39/223 ,  H01L39/025 ,  Y10S505/874

摘要： A Josephson tunnelling circuit is fabricated by forming layers of insulation and superconducting metallization on a substrate. The layers form Josephson tunnelling junctions, superconducting lines, superconducting contacts and other elements which may be needed. Josephson tunnelling junctions are formed by three layers, a thin tunnelling oxide between two superconducting layers. Superconducting contacts are formed between either of the two superconducting layers and an overlying third superconducting layer. The latter layer includes a metal, preferably indium, which has a free energy of oxide formation which is at least as high - or higher - than the alloys forming the first and second layers.

摘要翻译： 通过在衬底上形成绝缘和超导金属化层来制造约瑟夫森隧道电路。 这些层形成约瑟夫森隧道结，超导线，超导触点和可能需要的其他元件。 约瑟夫森隧道结由三层形成，即两层超导层之间的薄隧穿氧化层。 在两个超导层中的任一个和上覆的第三超导层之间形成超导触点。 后一层包括金属，优选铟，其具有与形成第一和第二层的合金至少高或更高的氧化物形成的自由能。

公开(公告)号：US3767981A

公开(公告)日：1973-10-23

申请号：US3767981D

申请日：1971-06-04

申请人： SIGNETICS CORP

发明人： POLATA B

IPC分类号： H01L21/00 ,  H01L23/485 ,  H01L29/00 ,  H01L29/06 ,  H01L29/40 ,  H01L9/00

CPC分类号： H01L29/404 ,  H01L21/00 ,  H01L23/485 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： High voltage planar diode structure having a semiconductor body with a planar surface. The body has a region of a first conductivity type extending to the surface and a second region in the body of opposite conductivity type and also extending to the surface and being defined by a dish-shaped P-N junction within said first region and extending to the surface. A layer of insulating material is provided on the surface and has an opening therein exposing the surface in an area overlying the second region. The insulating layer is graduated in thickness so that it becomes progressively thicker in a direction away from the opening in the insulating layer. Metallic means is disposed on the insulating layer and makes contact to said second region through the opening in the insulating layer and forms a field plate which generally overlies the depletion layer which is formed during operation of the diode.

摘要翻译： 具有具有平坦表面的半导体主体的高压平面二极管结构。 主体具有延伸到表面的第一导电类型的区域和在相反导电类型的主体中的第二区域，并且还延伸到表面并且由所述第一区域内的盘形PN结限定并延伸到表面 。 一层绝缘材料设置在表面上，并具有一开口，在该第二区域的上方覆盖该表面。 绝缘层的厚度分级，使得其在远离绝缘层的开口的方向上逐渐变厚。 金属装置设置在绝缘层上，并通过绝缘层中的开口与所述第二区域接触，并形成通常覆盖在二极管工作期间形成的耗尽层的场板。

公开(公告)号：US3766449A

公开(公告)日：1973-10-16

申请号：US3766449D

申请日：1972-03-27

申请人： FERRANTI LTD

发明人： BRUCHEZ J

IPC分类号： H01L27/07 ,  H01L29/08 ,  H01L9/00

CPC分类号： H01L27/0772 ,  H01L29/0813

摘要： A transistor having a high inverse gain value, and especially a multi-emitter transistor, is provided both with an additional feedback emitter directly connected to the base and positioned adjacent to the base contact, together with a base resistor portion between the region of the base having the base contact and the additional emitter and the region of the base in which each other emitter is formed.

摘要翻译： 具有高反向增益值的晶体管，特别是多发射极晶体管，具有直接连接到基极并邻近基极接触定位的附加反馈发射器，以及位于基极区域之间的基极电阻部分 具有基极接触和附加发射极以及形成每个其它发射极的基极区域。

公开(公告)号：US3684902A

公开(公告)日：1972-08-15

申请号：US3684902D

申请日：1966-06-07

申请人： WESTINGHOUSE ELECTRIC CORP

发明人： GIULIANO MICHAEL N ,  GOINS ELWOOD W

IPC分类号： H01L27/06 ,  H01L9/00

CPC分类号： H01L27/0688

摘要： A switching device is provided in a semiconductor structure including a first region with three regions in rectifying contact therewith and, additionally, an ohmic contact thereon. Two of the rectifying contacts are symmetrically disposed with respect to the third and to the ohmic contact on the first region to provide the equivalent of two matched transistors having common emitter and base regions. The ohmic contact on the first region may, for example, be located between or extend around the two symmetrically disposed rectifying contacts, or have an ''''E'''' or ''''H'''' shape, or it may extend around the third rectifying contact. When a switching signal is applied across the ohmic contact on the first region and the third rectifying contact a low impedance path is provided between the other two rectifying contacts.

摘要翻译： 开关器件设置在半导体结构中，该半导体结构包括具有三个与其整流接触的区域的第一区域，以及在其上的欧姆接触。 两个整流触点相对于第三区和第二区上的欧姆接触对称设置，以提供具有共同发射极和基极区的两个匹配晶体管的等效电路。 第一区域上的欧姆接触可以例如位于两个对称设置的整流触点之间或者围绕两个对称设置的整流触点延伸，或者具有“E”或“H”形状，或者可以围绕第三整流触点延伸。 当开关信号施加在第一区域上的欧姆接触和第三整流接触件之间时，在另外的两个整流触点之间提供低阻抗路径。

公开(公告)号：US3679947A

公开(公告)日：1972-07-25

申请号：US3679947D

申请日：1971-02-10

申请人： ANVAR

发明人： CHAKRAVERTY BENOY KUMAR ,  PLENIER ALAIN

IPC分类号： G11C13/04 ,  G11C16/02 ,  H01L21/00 ,  H01L23/29 ,  H01L29/00 ,  H01L45/00 ,  H01L9/00

CPC分类号： G11C13/0007 ,  G11C13/048 ,  G11C2213/34 ,  H01L21/00 ,  H01L23/291 ,  H01L29/00 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1286 ,  H01L45/14 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1633 ,  H01L2224/4918

摘要： A metal-insulator semiconductor structure for use in particular as a switching element with thermally reversible memory and comprising a semiconductor substrate, a film of amorphous insulator material on the said substrate and a metallic film which is deposited at least partially on the said insulator film, characterized in that the said amorphous insulator film exhibits a resistivity which is lower than the intrinsic resistivity of the said amorphous insulator material and which is comprised between 107 and 1011 Omega -cm at ambient temperature, the decrease in the said resistivity being due to the diffusion of ions into the said amorphous insulator film, the said structure being in a conducting or insulating stage within a predetermined temperature range, in an insulating state above the said range and in a conducting state below the said range.

摘要翻译： 一种特别用作具有热可逆存储器的开关元件的金属绝缘体半导体结构，包括半导体衬底，所述衬底上的非晶绝缘体材料的膜和至少部分地沉积在所述绝缘膜上的金属膜， 其特征在于，所述非晶绝缘体膜在环境温度下具有低于所述非晶绝缘体材料的固有电阻率的电阻率，并且其在环境温度下包含在107和1011ΩEGA-cm之间，所述电阻率的降低是由于扩散 的离子进入所述非晶绝缘膜，所述结构处于预定温度范围内的导电或绝缘阶段，处于高于所述范围的绝缘状态，低于所述范围的导通状态。

公开(公告)号：US3670214A

公开(公告)日：1972-06-13

申请号：US3670214D

申请日：1970-01-26

申请人： PHILIPS CORP

发明人： HAGEN SIEGFRIED HENDRIK

IPC分类号： A01F12/30 ,  H01L9/00 ,  H01L9/06

CPC分类号： A01F12/305 ,  Y10T428/29

摘要： Voltage-dependent resistor comprising a foil of insulating material in which semiconductor grains are embedded, which project from the foil on both sides and are in contact with electrode layers applied to both sides of the foil, the grains having a diameter of not more than 150 Mu and consist of a IIIV compound, preferably GaP having an energy gap of at least 1.1 eV.

摘要翻译： 电压依赖电阻器包括绝缘材料箔，其中嵌入半导体颗粒，其从箔两侧突出并且与施加到箔的两侧的电极层接触，所述晶粒的直径不大于150 并且由III-V族化合物组成，优选具有至少1.1eV的能隙的GaP。

公开(公告)号：US3649890A

公开(公告)日：1972-03-14

申请号：US3649890D

申请日：1969-12-31

申请人： MICROWAVE ASS

发明人： HOWELL CHARLES M ,  ANAND YOGINDER

IPC分类号： H01L29/00 ,  H01L29/47 ,  H01L9/00

CPC分类号： H01L29/00 ,  H01L29/47

摘要： A semiconductor rectifier device particularly suited for mixing and/or detecting electric wave signals in the microwave frequency range and having a high resistance to RF burnout is disclosed. A semiconductive region having an impurity concentration greater than a prescribed amount is located in a semiconductor body of opposite polarity to the region. A metal in face to face contact with the region and the semiconductor body forms an N-type and a P-type Schottky-barrier junction. A PN junction is also defined at the interface of the semiconductive region and semiconductor body such that under the influence of a low signal level no injection occurs at the PN junction but under the influence of a high signal level large injection occurs at the PN junction causing a large change in the impedance and capacitance of the device. As a result the semiconductor device, previously matched to the line at low RF signal level becomes mismatched and highly reflective of RF energy at high RF signal level, thus preventing burnout. (For the purposes of this disclosure low signal level is defined as 1-2 mW. typically of electromagnetic energy but no greater than 50 mW. per diode, whereas high signal level is any electromagnetic energy over 50 mW.

摘要翻译： 公开了一种特别适用于在微波频率范围内混合和/或检测电波信号并具有高耐RF损耗的半导体整流装置。