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公开(公告)号：US4015146A
公开(公告)日：1977-03-29
申请号：US641385
申请日：1975-12-16
申请人： Mitsuo Aihara , Shigeho Takada , Hisaharu Ogawa
发明人： Mitsuo Aihara , Shigeho Takada , Hisaharu Ogawa
IPC分类号： H03B7/06 , H03H5/12 , H03H11/52 , H03K17/687 , H03K3/53
摘要： This negative resistance network includes a first predetermined channel insulated gate enhancement type field effect transistor having a drain-source path connected to positive and negative input terminals on which a predetermined input voltage is impressed. The gate potential of the first field effect transistor is controlled by a second insulated gate enhancement type field effect transistor having an opposite channel type to the first field effect transistor, a gate connected to the drain thereof which is connected to the predetermined one of the positive and negative input terminals and a source connected to one pole of a dc power supply having a predetermined voltage, and by a third insulated gate enhancement type field effect transistor having the same channel type as the first field effect transistor, a drain and a gate connected to the drain of the second field effect transistor as well as to the gate of the first field effect transistor and a source connected to the source thereof which is connected to the other input terminal as well as to the other pole of the dc power supply, whereby the first field effect transistor shows a negative resistance characteristic attaining a relatively low current consumption over a relatively wide level range of the input voltage.
摘要翻译： 该负电阻网络包括第一预定沟道绝缘栅增强型场效应晶体管，漏极源极连接到在其上施加预定输入电压的正输入端和负输入端。 第一场效应晶体管的栅极电位由与第一场效应晶体管相反的沟道类型的第二绝缘栅增强型场效应晶体管控制，连接到其漏极的栅极连接到正的 负极输入端子和连接到具有预定电压的直流电源的一极的源极，以及具有与第一场效应晶体管相同的沟道类型的第三绝缘栅极增强型场效应晶体管，漏极和栅极连接 到第二场效应晶体管的漏极以及连接到其源极的第一场效应晶体管的栅极和连接到另一个输入端子以及直流电源的另一个极的源极， 由此第一场效应晶体管显示相对较宽的电阻消耗相对较低的负电阻特性 输入电压的电平范围。
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公开(公告)号：US3965441A
公开(公告)日：1976-06-22
申请号：US588760
申请日：1975-06-20
申请人： Neal L. Roy , David O. Hansen
发明人： Neal L. Roy , David O. Hansen
摘要： In a parallel resonant circuit having an inductor connected in parallel with a capacitor, a sensing resistor is connected in series with the inductor to sense the current in the resonant circuit. The voltage drop across the sensing resistor is applied to an operational amplifier and the amplified output voltage is fed back to the circuit loop out of phase with the sensed voltage drop so as to reduce the effective circuit resistance and thereby increase the circuit Q.
摘要翻译： 在具有与电容器并联的电感器的并联谐振电路中，感测电阻器与电感器串联连接以感测谐振电路中的电流。 感测电阻上的电压降被施加到运算放大器，并且放大的输出电压被反馈到与所感测的电压降异相的电路环路，以便减小有效的电路电阻，从而增加电路Q。
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公开(公告)号：US3789322A
公开(公告)日：1974-01-29
申请号：US3789322D
申请日：1972-11-24
申请人： UNITED AIRCRAFT CORP
发明人： REYNOLDS A
CPC分类号： H03B9/141
摘要： A coupling loop having a varactor in series therewith extends into a microwave cavity, which in one embodiment includes a coaxially aligned transferred electron device (TED) oscillator, with aperture output coupling into a waveguide. Bias for the varactor is applied by coaxial waveguide circuitry, the outer conductor of which is integral with the coupling loop, the circuitry including a low pass filter and a microwave energy absorbing means. Means are provided to ensure that the cavity wall adjacent the varactor is a microwave short circuit. Ancillary structures includes a tellurium copper heat sink, including a collet type heat sink mount for the TED, invar tuning screws in the cavity and waveguide which are formed of aluminum walls, and other structural details.
摘要翻译： 具有与其串联的变容二极管的耦合回路延伸到微波空腔中，微波腔在一个实施例中包括同轴对准的转移电子器件（TED）振荡器，孔径输出耦合到波导中。 用于变容二极管的偏置由同轴波导电路施加，同轴波导电路的外部导体与耦合回路成一体，该电路包括低通滤波器和微波能量吸收装置。 提供装置以确保与变容二极管相邻的腔壁是微波短路。 辅助结构包括碲铜散热器，包括用于TED的夹头式散热器安装座，由铝壁形成的空腔和波导中的invar调谐螺钉以及其他结构细节。
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公开(公告)号：US3708760A
公开(公告)日：1973-01-02
申请号：US3708760D
申请日：1970-12-24
申请人： FARKAS Z
发明人： FARKAS Z
CPC分类号： H03B7/06
摘要： A sinusoidal oscillator having a resonant path, a direct current voltage source, and two or more two-terminal, active devices, such as pnpn diodes, that break down and conduct when a characteristic voltage is reached. Such devices, when oscillating is established, conduct on alternate half-cycles. When a device breaks down, it becomes a low resistance and an oscillation will be established for a half a period. During this time, the voltage across the other device is less than its breakdown voltage. At the end of the half-period, the first device becomes back-biased and conduction through it ceases. Then, the second device breaks down and conducts for a half-cycle. The two devices continue thereafter to conduct on alternate half-periods so that substantially continuous, sinusoidal oscillations are established, and are sustained by the direct current source.
摘要翻译： 具有谐振路径的正弦振荡器，直流电压源以及当达到特征电压时分解和导通的两个或更多个两端的有源器件，例如pnpn二极管。 这种器件在建立振荡时，可以进行半个周期的交替。 当设备发生故障时，它会变成低电阻，并在半个时间段内建立振荡。 在此期间，另一个器件上的电压小于其击穿电压。 在半年结束时，第一个装置变得反向偏置，通过它的传导停止。 然后，第二个装置分解并进行半个循环。 两个装置之后继续进行交替的半周期，从而建立基本连续的正弦振荡，并由直流电源维持。
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公开(公告)号：US3651426A
公开(公告)日：1972-03-21
申请号：US3651426D
申请日：1970-06-24
发明人： BOATNER LYNN A , SEWELL KENNETH G
CPC分类号： H03C7/00 , H01L47/023 , H03B9/12 , H03C3/36 , H03M1/60
摘要： Disclosed is a Gunn-effect device comprising, for example, a crystal of n-type gallium arsenide having alloyed contacts (e.g., indium and gold) which is switched from one frequency of oscillation to another by controlling the incident light while maintaining an appropriate temperature and bias voltage. It is believed that trap zones which are localized within the crystal by virtue of introducing acceptor impurities account for a frequency of oscillation different from the usual transit-time frequency. The Gunn domains and the incident light are made to dynamically perturb the trap system so as to achieve a nonequilibrium condition.
摘要翻译： 公开了一种耿氏效应器件，其包括例如具有合金触点（例如，铟和金）的n型砷化镓的晶体，其通过控制入射光而从一个振荡频率切换到另一个频率，同时保持适当的温度 和偏置电压。 据信通过引入受体杂质而定位在晶体内的陷阱区域占据了与通常时间频率不同的振荡频率。 使得Gunn域和入射光动态扰动陷阱系统，以达到非平衡条件。
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公开(公告)号：US3628187A
公开(公告)日：1971-12-14
申请号：US3628187D
申请日：1969-12-10
IPC分类号： H01L29/872 , H01L21/00 , H01L29/47 , H01L29/861 , H01L29/864 , H03B9/12 , H03B7/06
CPC分类号： H03B9/12 , H01L21/00 , H01L29/861
摘要： A negative resistance avalanche diode comprises only a bulk semiconductor wafer contained between opposite Schottky barrier contacts.
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公开(公告)号：US3593196A
公开(公告)日：1971-07-13
申请号：US3593196D
申请日：1969-02-19
申请人： OMNI SPECTRA INC
发明人： HADDAD GEORGE I
摘要： An avalanche diode, of the IMPATT diode type, which may be used as an oscillator, amplifier, or frequency converter and having a construction utilizing both N P and NP junctions whereby improved power output and other operating characteristics can be attained.
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公开(公告)号：US3593172A
公开(公告)日：1971-07-13
申请号：US3593172D
申请日：1969-08-21
申请人： TELEFUNKEN PATENT
摘要： An amplifier circuit including a Gunn effect semiconductor which exhibits increased limit frequencies and higher negative conductance. The Gunn effect semiconductor is constructed to possess a region in the vicinity of its cathode in which the field strength as effected by a steady state biasing voltage lies between the critical value at which the Gunn oscillation is initiated and a lower value at which the Gunn oscillation is extinguished, while the remainder of the semiconductor body possesses a field strength less than such lower value. The first region is periodically pulse triggered to initiate the Gunn oscillation, the period between pulses being approximately equal to the transit time of a high field zone through the semiconductor body. The triggering pulses may be produced by a second Gunn element or they may be produced in the first Gunn element itself.
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公开(公告)号：US3582825A
公开(公告)日：1971-06-01
申请号：US3582825D
申请日：1968-07-19
申请人： HITACHI LTD
发明人： MIGITAKA MASATOSHI
CPC分类号： H03B9/12
摘要： A variable frequency solid-state oscillator having on a surface of a trapezoid-shaped semiconductor substrate a laterally trapezoid-shaped epitaxial layer of N-type semiconductor monocrystal, the four sides of the trapezoid being planes of cleavage, a negative electrode being provided on the shorter side of the parallel opposite sides of the semiconductor layer on the substrate, and a positive electrode being provided on the longer side of the parallel opposite sides of the semiconductor layer on the substrate. Said oscillator oscillates with a frequency corresponding to the applied voltage when various values of voltage are applied to said device through said electrodes with means for applying excitation voltages.
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公开(公告)号：US3550035A
公开(公告)日：1970-12-22
申请号：US3550035D
申请日：1968-12-20
发明人： ROBROCK RICHARD B
CPC分类号： H03B9/12
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