摘要:
A thin film magnetic head with a sufficient over write characteristic and a small magnetic pole width. A sub-pole tip is formed to cover the edge opposite to the air-bearing surface of a pole tip. The part where the sub-pole tip and the pole tip are overlapped is used as a sub-magnetic pole portion. The volume of the sub-magnetic pole portion is larger than that of a magnetic pole portion which consists of only the pole tip. Thereby, the saturation of the flux in a region in vicinity of the position of throat height 0 is suppressed and thus a sufficient over write characteristic is achieved.
摘要:
A first magnetic film, a gap film, a thin film coil supported by a insulated film and a second magnetic film are formed in turn. The second magnetic film has a pole part opposite to the first magnetic film via the gap film and a yoke part extending backward from the pole part to be magnetically connected to the first magnetic film. The forefront surface of the yoke part is receded from an air bearing surface. The pole part of the second magnetic film has a step d1 in a running direction of a magnetic recording medium and a step d2 in the perpendicular direction to the running direction within the yoke forefront surface and its periphery as is viewed from the yoke forefront surface. A protective film embeds the steps d1 and d2, and covers an inductive type thin film magnetic head element entirely. Thereby, without debasing the overwrite characteristic when the pole part is miniaturized, a thin film magnetic head having a narrowed track width can be provided.
摘要:
A thin-film magnetic head includes a thin-film magnetic circuit that contains a coil conductor with at least one surface. The coil conductor includes a plurality of grooves for reducing electrical resistance of the coil conductor due to skin effect. The grooves are formed on the at least one surface of the coil conductor to run along axis of the coil conductor.
摘要:
A method of grinding a microelectronic device includes a step of preparing an abrasive member by crushing a solid-phase liquid into massive form and by compacting the crushed solid-phase liquid, an abrasive member by compacting a solid-phase gas, or an abrasive member by crushing a solid-phase liquid into massive form, by mixing the crushed solid-phase liquid with a solid-phase gas and by compacting the mixed solid-phase liquid and solid-phase gas, and a step of pressing a surface of the microelectronic device to be ground against the abrasive member.
摘要:
A resist composition is used to form a plating frame including a space having a section of up to 2 .mu.m in width and at least 4 .mu.m in depth. The resist composition contains as an alkali-soluble resin and a sensitizer a novolak resin obtained by substituting a hydrogen atom in a hydroxyl group in a novolak resin comprising at least one recurring unit represented by the following formula (1): ##STR1## wherein n is an integer of 1 to 4 and m is an integer of 0 to 3, and having a weight average molecular weight of 2,000 to 6,000 calculated as polystyrene by 0.12 to 0.22 moles per hydrogen atom of a 1,2-naphthoquinonediazidosulfonyl group.
摘要:
A resist pattern formed on a substrate has a T-shaped cross section including a stem portion extending from the substrate surface and a cap portion connected to the stem portion and spaced from the substrate surface. Provided that .alpha. is a minimum of the angle which is defined between a tangent at the lower edge of the cap portion and the substrate surface, and h is the spacing between the lower edge of the cap portion and the substrate surface at an intermediate position, .alpha. and, h fall within a range defined and encompassed by tetragon ABCD wherein A: .alpha.=0.degree., h=0.01 .mu.m, B: .alpha.=20.degree., h=0.01 .mu.m, C: .alpha.=20.degree., h=0.2 .mu.m, and D: .alpha.=0.degree., h=0.3 .mu.m. In a patterning process including the steps of coating of a resist composition to form a resist coating, exposure, reversal baking and development, at least one condition is changed by reducing the thickness of the resist coating, reducing an exposure dose, lowering a reversal baking temperature, reducing a reversal baking time, increasing a developer temperature or extending a developing time such that a resist pattern of T-shaped cross section may be formed.
摘要:
The present invention provides a method for forming a photosensitive polyimide pattern 38 on a metal conductor 32, comprising carrying out the following steps (A) to (E) in this order: (A) a step of forming an ester bond type photosensitive polyimide precursor layer 33 by applying an ester bond type photosensitive polyimide precursor composition onto the metal conductor 32; (B) a step of forming an ion bond type photosensitive polyimide precursor layer 34 by applying an ion bond type photosensitive polyimide precursor composition onto the precursor layer 33 until the thickness of the precursor layer 34 reaches a desired thickness; (C) a step of exposing through a mask 35 and transferring the mask pattern as a latent image 36 onto the precursor layers 33 and 34; (D) a step of developing; and (E) a step of forming a polyimide pattern 38 by curing the developed precursor layers 33 and 34.
摘要:
A method of plating, which allows compositions of plating patterns of a plurality of layers to be uniform without any operational complexity, is provided. The area of the plating layer electrodeposited including plating patterns is constant in each of the plurality of layers. Accordingly, a value of plating-current density is easily maintained constant without any special operation. Consequently, the plating patterns in each of the plurality of layers is easily formed to have an uniform composition.
摘要:
A resist pattern processing apparatus comprises a stage for mounting a substrate having a patterned photoresist arranged on a surface thereof, a UV-emitting part for emitting UV rays to the stage, and an annular member for surrounding the whole periphery of the substrate. This allows the annular member to restrain ozone supplied near a mounting surface for the substrate on the stage from diffusing to the periphery of the stage, whereby the ozone concentration becomes even in the surface of the substrate mounted on the stage.
摘要:
A method of forming a metal trench pattern in a thin-film device includes a step of depositing an electrode film on a substrate or on a base layer, a step of forming a resist pattern layer having a trench forming portion used to make a trench pattern, on the deposited electrode film, a step of forming a metal layer for filling spaces in the trench forming portion and for covering the trench forming portion, by performing plating through the formed resist pattern layer using the deposited electrode film as an electrode, a step of planarizing at least a top surface of the formed metal layer until the trench forming portion of the resist pattern layer is at least exposed, and a step of removing the exposed trench forming portion of the resist pattern layer.