公开(公告)号：US08450144B2

公开(公告)日：2013-05-28

申请号：US12722795

申请日：2010-03-12

申请人： Junichiro Sakata ,  Hideyuki Kishida ,  Hiroki Ohara ,  Toshinari Sasaki ,  Shunpei Yamazaki

发明人： Junichiro Sakata ,  Hideyuki Kishida ,  Hiroki Ohara ,  Toshinari Sasaki ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  G09G3/3258 ,  G09G3/3275 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0248 ,  G09G2310/0297 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/1288 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/66969 ,  H01L29/78618

摘要： An object of an embodiment of the present invention is to provide a semiconductor device provided with a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor layer including silicon oxide, an insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain regions between the oxide semiconductor layer including silicon oxide and source and drain electrode layers. The source and drain regions are formed using a degenerate oxide semiconductor material or a degenerate oxynitride material.

摘要翻译： 本发明的一个实施例的目的是提供一种具有薄膜晶体管的半导体器件，该薄膜晶体管包括氧化物半导体层并具有高电特性。 半导体器件包括绝缘表面上的栅电极，包括氧化硅的氧化物半导体层，栅电极和氧化物半导体层之间的绝缘层，以及包括氧化硅的氧化物半导体层和源极和漏极之间的源极和漏极区 电极层。 源区和漏区使用简并氧化物半导体材料或简并氧氮化物材料形成。

公开(公告)号：US08362563B2

公开(公告)日：2013-01-29

申请号：US13558638

申请日：2012-07-26

申请人： Toshikazu Kondo ,  Hideyuki Kishida

发明人： Toshikazu Kondo ,  Hideyuki Kishida

IPC分类号： H01L27/12 ,  H01L29/66

CPC分类号： H01L27/1225 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/477 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/45 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78663 ,  H01L29/78678 ,  H01L29/7869 ,  H01L29/78693

摘要： In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

公开(公告)号：US20110215331A1

公开(公告)日：2011-09-08

申请号：US13034726

申请日：2011-02-25

申请人： Shunpei YAMAZAKI ,  Hideyuki KISHIDA

发明人： Shunpei YAMAZAKI ,  Hideyuki KISHIDA

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L21/477 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/1368 ,  G02F1/137 ,  G02F2201/121 ,  G02F2201/123 ,  G09G3/3648 ,  G09G2310/08 ,  G09G2330/021 ,  G11C16/10 ,  G11C16/14 ,  G11C16/26 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02614 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/3228 ,  H01L27/1052 ,  H01L27/11521 ,  H01L27/1156 ,  H01L27/1203 ,  H01L27/1225 ,  H01L29/247 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

摘要： An object of the present invention to provide a highly reliable semiconductor device. Another object is to provide a manufacturing method of a highly reliable semiconductor device. Still another object is to provide a semiconductor device having low power consumption. Yet another object is to provide a manufacturing method of a semiconductor device having low power consumption. Furthermore, another object is to provide a semiconductor device which can be manufactured with high mass productivity. Another object is to provide a manufacturing method of a semiconductor device which can be manufactured with high mass productivity. An impurity remaining in an oxide semiconductor layer is removed so that the oxide semiconductor layer is purified to have an extremely high purity. Specifically, after adding a halogen element into the oxide semiconductor layer, heat treatment is performed to remove an impurity from the oxide semiconductor layer. The halogen element is preferably fluorine.

摘要翻译： 本发明的目的是提供一种高度可靠的半导体器件。 另一个目的是提供一种高度可靠的半导体器件的制造方法。 另一个目的是提供一种具有低功耗的半导体器件。 另一个目的是提供一种具有低功耗的半导体器件的制造方法。 此外，另一个目的是提供一种可以高质量生产率制造的半导体器件。 本发明的另一个目的是提供一种能以高质量生产率制造的半导体器件的制造方法。 去除残留在氧化物半导体层中的杂质，使得氧化物半导体层被纯化成具有非常高的纯度。 具体地说，在向氧化物半导体层中添加卤素元素之后，进行热处理从氧化物半导体层去除杂质。 卤素元素优选为氟。

公开(公告)号：US20110101335A1

公开(公告)日：2011-05-05

申请号：US12912196

申请日：2010-10-26

申请人： Shunpei YAMAZAKI ,  Akiharu MIYANAGA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Junichiro SAKATA

发明人： Shunpei YAMAZAKI ,  Akiharu MIYANAGA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Junichiro SAKATA

IPC分类号： H01L29/12 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

摘要： An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer, such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O), are moved through the oxygen-excess mixed region or oxygen-excess oxide insulating layer and diffused into the insulating layer. Thus, the impurity concentration of the oxide semiconductor layer is reduced.

摘要翻译： 本发明的目的是提供一种包括具有稳定电特性的氧化物半导体的半导体器件。 在氧化物半导体层上形成具有以悬挂键为代表的许多缺陷的绝缘层，其间具有氧过剩混合区域或氧过剩氧化物绝缘层，由此氧化物半导体层中的诸如氢或水分的杂质（ 氢原子或包含氢原子如H 2 O的化合物）通过氧过剩混合区域或氧 - 过量氧化物绝缘层移动并扩散到绝缘层中。 因此，氧化物半导体层的杂质浓度降低。

公开(公告)号：US20110084272A1

公开(公告)日：2011-04-14

申请号：US12900136

申请日：2010-10-07

申请人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

发明人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

IPC分类号： H01L29/22 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/78618

摘要： An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.

摘要翻译： 目的是提供一种具有良好电特性的薄膜晶体管和包括薄膜晶体管作为开关元件的半导体器件。 薄膜晶体管包括形成在绝缘表面上的栅极电极，栅电极上的栅极绝缘膜，与栅极绝缘膜上的栅电极重叠的氧化物半导体膜，并且包括其中浓度为1或 包含在氧化物半导体中的多种金属高于其他区域，形成在氧化物半导体膜上并与该层接触的一对金属氧化物膜，以及与金属氧化物膜接触的源电极和漏电极 。 金属氧化物膜通过氧化源电极和漏电极中所含的金属而形成。

公开(公告)号：US20110068335A1

公开(公告)日：2011-03-24

申请号：US12887646

申请日：2010-09-22

申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/78696 ,  H01L21/2636 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869

摘要： It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

摘要翻译： 本发明的目的是提供具有良好电气特性的高度可靠的半导体器件以及包括半导体器件作为开关元件的显示器件。 在包括氧化物半导体层的晶体管中，设置在氧化物半导体层的至少一个表面侧上的针状晶体在垂直于该表面的c轴方向上生长，并且包括平行于该表面的ab平面，以及除了 针状晶体组是无定形区域或非晶态和微晶体混合的区域。 因此，可以形成具有良好电特性的高可靠性半导体器件。

公开(公告)号：US20090246186A1

公开(公告)日：2009-10-01

申请号：US12295258

申请日：2007-03-29

申请人： Yoshiyuki Shinagawa ,  Hideyuki Kishida ,  Taizo Kawabe ,  Hirokazu Sakamoto ,  Hiroshi Kubo ,  Kazunori Hosoe

发明人： Yoshiyuki Shinagawa ,  Hideyuki Kishida ,  Taizo Kawabe ,  Hirokazu Sakamoto ,  Hiroshi Kubo ,  Kazunori Hosoe

IPC分类号： A61K31/122 ,  A61P25/00

CPC分类号： A61K31/09 ,  A61K31/122

摘要： The present invention aims to activate neural cells in brain, and further provide a useful composition having an action to protect intracerebral neural cells from external and internal stresses.An agent for improving a neural cell function containing reduced coenzyme Q as an active ingredient, more specifically, an agent for activating neural cells and an agent for protecting neural cells, is useful, and can be used for the improvement or prophylaxis of central neurological diseases or neuropathy symptoms derived from or associated with a neurodegenerative disease, promotion of cognitive function or improvement of learning and memory disorders.

摘要翻译： 本发明旨在激活脑中的神经细胞，并进一步提供一种有用的组合物，其具有保护脑内神经细胞免受外部和内部应激的作用。 用于改善包含还原型辅酶Q作为活性成分的神经细胞功能的药剂，更具体地，用于激活神经细胞的药剂和用于保护神经细胞的药剂是有用的，并且可用于改善或预防中枢神经系统疾病 或由神经退行性疾病引起或与之相关的神经病症状，促进认知功能或改善学习和记忆障碍。

公开(公告)号：US20050074860A1

公开(公告)日：2005-04-07

申请号：US10938431

申请日：2004-09-09

申请人： Takahiro Ueda ,  Shiro Kitamura ,  Taizo Kawabe ,  Hideyuki Kishida ,  Yasuyoshi Ueda

发明人： Takahiro Ueda ,  Shiro Kitamura ,  Taizo Kawabe ,  Hideyuki Kishida ,  Yasuyoshi Ueda

IPC分类号： A23L1/30 ,  C07C43/23 ,  C07C43/20 ,  C12N9/00 ,  C12Q1/48

CPC分类号： C07C43/23 ,  A23L33/10

摘要： The present invention provides a reduced coenzyme Q10 crystal with excellent stability and a composition containing said reduced coenzyme Q10 crystals. According to the present invention, after dissolving reduced coenzyme Q10 in a fat and oil, it is cooled, making it possible to obtain reduced coenzyme Q10 crystals with excellent stability and which exhibit an x-ray diffraction pattern (using a CuKα emission line) that differs from ordinary reduced coenzyme Q10 crystals. Moreover, said crystals are also excellent in bioabsorbability.

摘要翻译： 本发明提供具有优异稳定性的还原型辅酶Q10晶体和含有所述还原型辅酶Q10晶体的组合物。 根据本发明，在将脂肪和油中的还原型辅酶Q10溶解后，将其冷却，可以获得稳定性优异的还原型辅酶Q10晶体，并显示出X射线衍射图（使用CuKα发射线） 与普通还原​​型辅酶Q10晶体不同。 此外，所述晶体的生物吸收性也优异。

公开(公告)号：US5270339A

公开(公告)日：1993-12-14

申请号：US938164

申请日：1992-12-03

申请人： Kozo Yamamoto ,  Yoshihide Fuse ,  Hideyuki Kishida ,  Naoko Yasuhara ,  Toshiaki Miwa ,  Ikuo Katsumi ,  Takayoshi Hidaka

发明人： Kozo Yamamoto ,  Yoshihide Fuse ,  Hideyuki Kishida ,  Naoko Yasuhara ,  Toshiaki Miwa ,  Ikuo Katsumi ,  Takayoshi Hidaka

IPC分类号： C07D207/08 ,  C07D207/20 ,  C07D207/24 ,  C07D207/26 ,  C07D207/36 ,  C07D405/12 ,  C07D207/06

CPC分类号： C07D207/26 ,  C07D207/08 ,  C07D207/20 ,  C07D207/24 ,  C07D207/36 ,  C07D405/12

摘要： There are described a phenoxybenzene derivative having the formula (I): ##STR1## wherein R.sup.1 is hydrogen atom; an alkyl group having 1 to 3 carbon atoms; --OR.sup.6 or a halogen atom,R.sup.2 is hydrogen atom, nitro group or amino group,R.sup.3 is hydrogen atom, an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 3 to 5 carbon atoms, allyl group, vinyl group or --(CH.sub.2)n.sup.1 R.sup.7R.sup.4 is hydrogen atom, an alkyl group having 1 to 3 carbon atoms or --(CH.sub.2)n.sup.3 R.sup.25R.sup.5 hydrogen atom; an alkyl group having 1 to 3 carbon atoms; or phenyl group,X is ##STR2## wherein Y is oxygen atom or sulfur atom; or --CHR.sup.27 -- and line means a single bond or a double bond provided that n is 2 in case that the line means a single bond and n is 1 in case that the line means a double bond, ora pharmacologically acceptable salt thereof,a cognition enhancer comprising the same as an effective ingredient andan antidepressant comprising the same as an effective ingredient.

摘要翻译： PCT No.PCT / JP92 / 00410 Sec。 371日期1992年12月3日 102（e）日期1992年12月3日PCT提交1992年4月2日PCT公布。 WO92 / 17447 PCT出版物 描述了具有式（I）的苯氧基苯衍生物：其中R 1是氢原子;（I）其中R 1是氢原子; 具有1至3个碳原子的烷基; -OR 6或卤原子，R 2为氢原子，硝基或氨基，R 3为氢原子，碳原子数1〜8的烷基，碳原子数3〜5的环烷基，烯丙基，乙烯基或 - （CH2）n1R7 R4为氢原子，碳原子数1〜3的烷基或 - （CH2）n3R25 R5氢原子; 具有1至3个碳原子的烷基; 或苯基，X是其中Y是氧原子或硫原子; 或-CHR27-，并且线表示单键或双键，条件是在线表示单键的情况下n为2，并且在该线表示双键的情况下n为1，或其药理学上可接受的盐， 包含与有效成分相同的认知增强剂和包含其作为有效成分的抗抑郁药。

公开(公告)号：US09935202B2

公开(公告)日：2018-04-03

申请号：US13528009

申请日：2012-06-20

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC分类号： H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.