摘要:
A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula: where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
摘要:
Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 μm−1 at 193 nm and a relatively high refractive index are provided. The functionalized polycarbosilanes contain at least one pendant group that is acid labile or aqueous base soluble. Also disclosed are photoresists formulations containing the functionalized polycarbosilanes that are suitable for use in lithography, e.g., immersion lithography.
摘要:
Bilayer systems include a bottom layer formed of polydimethylglutarimide, an acid labile dissolution inhibitor and a photoacid generator. The bilayer system can be exposed and developed in a single exposure and development process.
摘要:
A topcoat material for application on top of a photoresist material is disclosed. The topcoat material comprises an acid-inert compound. The topcoat material also comprises a polymer or an oligomer or a cage structure which shows negligible intermixing with the imaging layer and is soluble in aqueous base developer. A method of forming a patterned material layer on a substrate and a coated substrate comprising the topcoat material is also disclosed.
摘要:
Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 μm−1 at 193 nm and a relatively high refractive index are provided. The functionalized polycarbosilanes contain at least one pendant group that is acid labile or aqueous base soluble. Also disclosed are photoresists formulations containing the functionalized polycarbosilanes that are suitable for use in lithography, e.g., immersion lithography.
摘要:
A polymer blend is provided for use in a lithographic photoresist composition, particularly a chemical amplification photoresist. In a preferred embodiment, the polymer blend is substantially transparent to deep ultraviolet radiation, i.e., radiation of a wavelength less than 250 nm, including wavelengths of 157 nm, 193 nm and 248 nm, and has improved sensitivity and resolution. Processes for preparing and using the polymer blend are also provided, as are lithographic photoresist compositions that contain the polymer blend.
摘要:
Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.
摘要:
A method of forming a layered structure comprising a domain pattern of a self-assembled material utilizes a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist. The developed photoresist is not soluble in an organic casting solvent for a material capable of self-assembly. The developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the material capable of self-assembly and the organic casting solvent is casted on the patterned photoresist layer. Upon removal of the organic casting solvent, the material self-assembles, thereby forming the layered structure.
摘要:
Coating compositions include a polymer including: wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality; X1, X2, X3 are independently H or CH3; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.
摘要翻译:涂料组合物包括聚合物,其包括:其中R1是含硅部分,R2是酸稳定的内酯官能团,R3是酸不稳定的内酯官能团; X 1,X 2,X 3独立地为H或CH 3; 并且m和o是非零正整数,n是零或表示重复单元数的正整数; 光致酸发生器; 和溶剂。 还公开了在含有该图案的涂料组合物中形成图案的方法。
摘要:
The present invention involves a method for generating a photoresist image on a substrate. The method comprises coating a substrate with a film comprising a polymer comprising fluorocarbinol monomers; imagewise exposing the film to radiation; heating the film to a temperature of, at, or below about 90° C. and developing the image. The present invention also relates to a method for generating a photoresist image on a substrate where a polymer comprising fluorocarbinol monomers is used as a protective top coat.