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    Methods of fabricating a semiconductor device having multi-gate insulation layers and semiconductor devices fabricated thereby
    31.
    发明授权
    Methods of fabricating a semiconductor device having multi-gate insulation layers and semiconductor devices fabricated thereby 有权
    制造具有多栅极绝缘层的半导体器件和由此制造的半导体器件的方法

    公开(公告)号：US07508048B2

    公开(公告)日：2009-03-24

    申请号：US10758802

    申请日：2004-01-15

    申请人： Dae-Woong Kang ,  Hong-Soo Kim ,  Jung-Dal Choi ,  Kyu-Charn Park ,  Seong-Soon Cho ,  Yong-Sik Yim ,  Sung-Nam Chang

    发明人： Dae-Woong Kang ,  Hong-Soo Kim ,  Jung-Dal Choi ,  Kyu-Charn Park ,  Seong-Soon Cho ,  Yong-Sik Yim ,  Sung-Nam Chang

    IPC分类号： H01L29/00

    CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11543

    摘要： Methods of fabricating a semiconductor device having multi-gate insulation layers and semiconductor devices fabricated thereby are provided. The method includes forming a pad insulation layer and an initial high voltage gate insulation layer on a first region and a second region of a semiconductor substrate respectively. The initial high voltage gate insulation layer is formed to be thicker than the pad insulation layer. A first isolation layer that penetrates the pad insulation layer and is buried in the semiconductor substrate is formed to define a first active region in the first region, and a second isolation layer that penetrates the initial high voltage gate insulation layer and is buried in the semiconductor substrate is formed to define a second active region in the second region. The pad insulation layer is then removed to expose the first active region. A low voltage gate insulation layer is formed on the exposed first active region. Accordingly, it can minimize a depth of recessed regions (dent regions) to be formed at edge regions of the first isolation layer during removal of the pad insulation layer, and it can prevent dent regions from being formed at edge regions of the second isolation layer.

    摘要翻译： 提供了制造具有多栅极绝缘层的半导体器件和由此制造的半导体器件的方法。 该方法包括分别在半导体衬底的第一区域和第二区域上形成衬垫绝缘层和初始高电压栅极绝缘层。 初始高压栅绝缘层形成为比焊垫绝缘层厚。 形成穿过焊盘绝缘层并被埋在半导体衬底中的第一隔离层，以限定第一区域中的第一有源区和穿过初始高电压栅极绝缘层并被埋在半导体中的第二隔离层 形成衬底以限定第二区域中的第二有源区。 然后去除焊盘绝缘层以露出第一有源区。 在暴露的第一有源区上形成低压栅极绝缘层。 因此，能够最大限度地减少在去除焊盘绝缘层期间在第一隔离层的边缘区域形成的凹陷区域（凹陷区域）的深度，并且可以防止凹陷区域形成在第二隔离层的边缘区域 。

    CONCEPT MONITORING IN SPOKEN-WORD AUDIO
    32.
    发明申请
    CONCEPT MONITORING IN SPOKEN-WORD AUDIO 有权
    概念监听音频字幕

    公开(公告)号：US20080319750A1

    公开(公告)日：2008-12-25

    申请号：US11765923

    申请日：2007-06-20

    申请人： Stephen Frederick Potter ,  Tal Saraf ,  David Gareth Ollason ,  Steve Sung-Nam Chang

    发明人： Stephen Frederick Potter ,  Tal Saraf ,  David Gareth Ollason ,  Steve Sung-Nam Chang

    IPC分类号： G10L15/28

    CPC分类号： G10L15/26

    摘要： Monitoring a spoken-word audio stream for a relevant concept is disclosed. A speech recognition engine may recognize a plurality of words from the audio stream. Function words that do not indicate content may be removed from the plurality of words. A concept may be determined from at least one word recognized from the audio stream. The concept may be determined via a morphological normalization of the plurality of words. The concept may be associated with a time related to when the at least one word was spoken. A relevance metric may be computed for the concept. Computing the relevance metric may include assessing the temporal frequency of the concept within the audio stream. The relevance metric for the concept may be based on respective confidence scores of the at least one word. The concept, time, and relevance metric may be displayed in a graphical display.

    摘要翻译： 公开了监听相关概念的口语字音频流。 语音识别引擎可以从音频流识别多个单词。 可以从多个单词中去除不表示内容的功能词。 可以从从音频流识别的至少一个字确定概念。 该概念可以通过多个单词的形态归一化来确定。 该概念可能与与何时发出至少一个字有关的时间相关联。 可以为该概念计算相关性度量。 计算相关性度量可以包括评估音频流内概念的时间频率。 该概念的相关性度量可以基于至少一个单词的相应置信度得分。 概念，时间和相关性度量可以显示在图形显示中。