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31.发明授权Methods and apparatus to fabricate soft magnetic film with preferred uniaxial anisotropy for perpendicular recording 有权用于垂直记录制备具有优选的单轴各向异性的软磁膜的方法和装置公开(公告)号：US08252367B2
公开(公告)日：2012-08-28
申请号：US11960006
申请日：2007-12-19
CPC分类号： H01F41/32 , B82Y25/00 , G11B5/667 , G11B5/8404 , H01F10/3268
摘要： Soft magnetic film fabricated with preferred uniaxial anisotropy for perpendicular recording. One type of cathode design has a field direction that is parallel to the direction of the Hex of the second SUL with a magnetically-pinned first SUL. In addition, SUL structures having low AP exchange energy also are disclosed. The SUL structure combines the cathode field direction of the SUL2 with the pinned SUL1. The SUL1 is magnetically pinned to the pinning layer and the pinning direction is parallel to the direction of the cathode field applied during deposition of the SUL1. High Hc ferro-magnetic materials may be deposited onto a heated substrate that is magnetized along the radial direction by the cathode field. The pinning field may be higher than the cathode field, indicating that the cathode field during deposition of the SUL2 cannot disturb the magnetic state of the SUL1 pinned to pinning layer.
摘要翻译： 用于垂直记录的具有优选的单轴各向异性制造的软磁膜。 一种类型的阴极设计具有平行于具有磁性固定的第一SUL的第二SUL的Hex的方向的场方向。 此外，还公开了具有低AP交换能量的SUL结构。 SUL结构将SUL2的阴极场方向与固定SUL1相结合。 SUL1被磁性地固定到钉扎层，并且钉扎方向平行于在沉积SUL1期间施加的阴极场的方向。 高Hc铁磁材料可以沉积在被阴极场沿径向磁化的加热衬底上。 钉扎场可能高于阴极场，表明SUL2沉积期间的阴极场不能干扰固定到钉扎层的SUL1的磁状态。
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32.发明授权Semiconductor device with improved insulating film and floating gate arrangement to decrease memory cell size without reduction of capacitance 有权具有改进的绝缘膜和浮栅布置的半导体器件，以减小存储器单元尺寸而不降低电容公开(公告)号：US08212305B2
公开(公告)日：2012-07-03
申请号：US12633815
申请日：2009-12-09
IPC分类号： H01L29/788
CPC分类号： H01L27/11517 , G11C16/0433 , H01L21/32053 , H01L21/32055 , H01L21/768 , H01L27/115 , H01L27/11521 , H01L29/42324 , H01L29/42376
摘要： A semiconductor device having a nonvolatile memory is reduced in size. In an AND type flash memory having a plurality of nonvolatile memory cells having a plurality of first electrodes, a plurality of word lines crossing therewith, and a plurality of floating gate electrodes disposed at positions which respectively lie between the plurality of adjacent first electrodes and overlap the plurality of word lines, as seen in plan view, the plurality of floating gate electrodes are formed in a convex shape, as seen in cross section, so as to be higher than the first electrodes. As a result, even when nonvolatile memory cells are reduced in size, it is possible to process the floating gate electrodes with ease. In addition, it is possible to improve the coupling ratio between floating gate electrodes and control gate electrodes of the word lines without increasing the area occupied by the nonvolatile memory cells.
摘要翻译： 具有非易失性存储器的半导体器件的尺寸减小。 在具有多个非易失性存储单元的AND型闪速存储器中，具有多个第一电极，与之交叉的多个字线，以及设置在分别位于多个相邻的第一电极之间且重叠的位置的多个浮置栅电极 如平面图所示，多个字线如横截面那样形成为凸形，从而高于第一电极。 结果，即使非易失性存储单元的尺寸减小，也可以容易地处理浮置栅电极。 此外，可以提高字线的浮栅电极和控制栅电极之间的耦合比，而不增加非易失存储单元所占的面积。
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33.发明授权Perpendicular magnetic recording media with oxide-containing exchange coupling layer 有权具有氧化物交换耦合层的垂直磁记录介质公开(公告)号：US08168310B2
公开(公告)日：2012-05-01
申请号：US12638905
申请日：2009-12-15
申请人： Xiaoping Bian , Jack Jyh-Kau Chang , Qing Dai , Hoa V. Do , Yoshihiro Ikeda , Kentaro Takano , Chu S. Tran
发明人： Xiaoping Bian , Jack Jyh-Kau Chang , Qing Dai , Hoa V. Do , Yoshihiro Ikeda , Kentaro Takano , Chu S. Tran
IPC分类号： G11B5/66
摘要： A magnetic storage medium according to one embodiment includes a substrate; a first oxide magnetic layer formed above the substrate; a second oxide magnetic layer formed above the first oxide magnetic layer; an exchange coupling layer formed above the second oxide magnetic layer, the exchange coupling layer comprising an oxide; and a magnetic cap layer formed above the exchange coupling layer. A method according to one embodiment includes forming a high Ku first oxide magnetic layer above a substrate by sputtering; forming a low Ku second oxide magnetic layer above the first oxide magnetic layer by sputtering; forming an exchange coupling layer of CoCrPt-oxide above the second oxide magnetic layer; and forming a magnetic cap layer above the exchange coupling layer. Additional systems and methods are also presented.
摘要翻译： 根据一个实施例的磁存储介质包括基板; 形成在所述基板上的第一氧化物磁性层; 形成在所述第一氧化物磁性层上方的第二氧化物磁性层; 在所述第二氧化物磁性层上形成的交换耦合层，所述交换耦合层包含氧化物; 以及形成在所述交换耦合层上方的磁性盖层。 根据一个实施例的方法包括通过溅射在衬底上方形成高Ku第一氧化物磁性层; 通过溅射在第一氧化物磁性层上方形成低Ku第二氧化物磁性层; 在所述第二氧化物磁性层上方形成CoCrPt氧化物的交换耦合层; 以及在所述交换耦合层上方形成磁性覆盖层。 还介绍了其他系统和方法。
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公开(公告)号：US20110284945A1
公开(公告)日：2011-11-24
申请号：US13195068
申请日：2011-08-01
IPC分类号： H01L29/788
CPC分类号： H01L27/11517 , G11C16/0433 , H01L21/32053 , H01L21/32055 , H01L21/768 , H01L27/115 , H01L27/11521 , H01L29/42324 , H01L29/42376
摘要： A semiconductor device having a nonvolatile memory is reduced in size. In an AND type flash memory having a plurality of nonvolatile memory cells having a plurality of first electrodes, a plurality of word lines crossing therewith, and a plurality of floating gate electrodes disposed at positions which respectively lie between the plurality of adjacent first electrodes and overlap the plurality of word lines, as seen in plan view, the plurality of floating gate electrodes are formed in a convex shape, as seen in cross section, so as to be higher than the first electrodes. As a result, even when nonvolatile memory cells are reduced in size, it is possible to process the floating gate electrodes with ease. In addition, it is possible to improve the coupling ratio between floating gate electrodes and control gate electrodes of the word lines without increasing the area occupied by the nonvolatile memory cells.
摘要翻译： 具有非易失性存储器的半导体器件的尺寸减小。 在具有多个非易失性存储单元的AND型闪速存储器中，具有多个第一电极，与之交叉的多个字线，以及设置在分别位于多个相邻的第一电极之间且重叠的位置的多个浮置栅电极 如平面图所示，多个字线如横截面那样形成为凸形，从而高于第一电极。 结果，即使非易失性存储单元的尺寸减小，也可以容易地处理浮置栅电极。 此外，可以提高字线的浮栅电极和控制栅电极之间的耦合比，而不增加非易失存储单元所占的面积。
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35.发明申请公开(公告)号：US20110186186A1
公开(公告)日：2011-08-04
申请号：US12993468
申请日：2009-05-19
申请人： Kengo Fukazawa , Yoshitaka Misaka , Kazuhiro Kawasaki , Yoshihiro Ikeda , Masaaki Beppu , Arata Suda
发明人： Kengo Fukazawa , Yoshitaka Misaka , Kazuhiro Kawasaki , Yoshihiro Ikeda , Masaaki Beppu , Arata Suda
CPC分类号： C23C8/32 , C21D1/06 , C21D1/10 , C21D1/70 , C21D1/72 , C21D2211/004 , C21D2221/00 , C21D2251/00 , C23C8/56 , C23C8/80 , Y02P10/253
摘要： Providing an iron and steel material having quenched surface part, avoiding oxidation of a compound layer formed on the surface of the iron and steel material due to quenching, its production method, and an induction-quenched component. A quenched iron and steel material 10 comprises an iron and steel material 11, a compound layer 12 formed on the iron and steel material 11, and an antioxidant cover layer 13 formed on the compound layer 12. The iron and steel material 11 has a hardened layer having a given depth, and the surface of the iron and steel material 11 has enhanced hardness. A method for producing the iron and steel material 10 comprises a first step for forming the antioxidant cover layer 13 to cover the compound layer 12 formed on the iron and steel material 11, and a second step for applying induction hardening to the iron and steel material 11 having the compound layer 12 and the antioxidant cover layer 13, with the temperature increased in a given heating time until the given heating temperature is reached, and with cooling immediately performed once the heating temperature is reached.
摘要翻译： 提供具有淬火表面部分的钢铁材料，避免由于淬火而形成在钢铁材料表面上的化合物层的氧化，其制造方法和感应淬火组分。 淬火的钢铁材料10包括钢铁材料11，形成在钢铁材料11上的化合物层12和形成在化合物层12上的抗氧化剂覆盖层13.钢铁材料11具有硬化 具有给定深度的层，钢铁材料11的表面具有增强的硬度。 钢铁材料10的制造方法包括形成抗氧化覆盖层13以覆盖钢铁材料11上形成的复合层12的第一工序，以及对钢铁材料施加高频淬火的第二工序 11，具有化合物层12和抗氧化剂覆盖层13，在给定的加热时间内温度升高直到达到给定的加热温度，并且一旦达到加热温度就立即进行冷却。
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36.发明申请PERPENDICULAR MAGNETIC RECORDING MEDIA WITH OXIDE-CONTAINING EXCHANGE COUPLING LAYER 有权含氧化物交换耦合层的全磁性记录介质公开(公告)号：US20110141621A1
公开(公告)日：2011-06-16
申请号：US12638905
申请日：2009-12-15
申请人： Xiaoping Bian , Jack Jyh-Kau Chang , Qing Dai , Hoa V. Do , Yoshihiro Ikeda , Kentaro Takano , Chu S. Tran
发明人： Xiaoping Bian , Jack Jyh-Kau Chang , Qing Dai , Hoa V. Do , Yoshihiro Ikeda , Kentaro Takano , Chu S. Tran
摘要： A magnetic storage medium according to one embodiment includes a substrate; a first oxide magnetic layer formed above the substrate; a second oxide magnetic layer formed above the first oxide magnetic layer; an exchange coupling layer formed above the second oxide magnetic layer, the exchange coupling layer comprising an oxide; and a magnetic cap layer formed above the exchange coupling layer. A method according to one embodiment includes forming a high Ku first oxide magnetic layer above a substrate by sputtering; forming a low Ku second oxide magnetic layer above the first oxide magnetic layer by sputtering; forming an exchange coupling layer of CoCrPt-oxide above the second oxide magnetic layer; and forming a magnetic cap layer above the exchange coupling layer. Additional systems and methods are also presented.
摘要翻译： 根据一个实施例的磁存储介质包括基板; 形成在所述基板上的第一氧化物磁性层; 形成在所述第一氧化物磁性层上方的第二氧化物磁性层; 在所述第二氧化物磁性层上形成的交换耦合层，所述交换耦合层包含氧化物; 以及形成在所述交换耦合层上方的磁性盖层。 根据一个实施例的方法包括通过溅射在衬底上方形成高Ku第一氧化物磁性层; 通过溅射在第一氧化物磁性层上方形成低Ku第二氧化物磁性层; 在所述第二氧化物磁性层上方形成CoCrPt氧化物的交换耦合层; 以及在所述交换耦合层上方形成磁性覆盖层。 还介绍了其他系统和方法。
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公开(公告)号：US07862913B2
公开(公告)日：2011-01-04
申请号：US11584992
申请日：2006-10-23
申请人： Xiaoping Bian , Qing Dai , Hoa Do , Yoshihiro Ikeda , David Margulies , Mary Frances Minardi , Natacha Frederique Supper , Kentaro Takano , Min Xiao , Qi-Fan Xiao
发明人： Xiaoping Bian , Qing Dai , Hoa Do , Yoshihiro Ikeda , David Margulies , Mary Frances Minardi , Natacha Frederique Supper , Kentaro Takano , Min Xiao , Qi-Fan Xiao
CPC分类号： G11B5/667 , G11B5/65 , G11B5/66 , G11B5/7325
摘要： An improved structure for the construction of perpendicular recording media is disclosed. The structure includes a perpendicular recording layer with at least two oxide sublayers or a lower sublayer of a non-oxide. One structure includes an upper sublayer comprised of a Silicon-oxide, while a lower sublayer is comprised of a Tantalum-oxide. The structures provide for increased coercivity and corrosion resistance.
摘要翻译： 公开了用于构建垂直记录介质的改进的结构。 该结构包括具有至少两个氧化物层的垂直记录层或非氧化物的下层。 一个结构包括由氧化硅构成的上层，而下层由钽氧化物构成。 该结构提供增强的矫顽力和耐腐蚀性。
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公开(公告)号：US07774041B2
公开(公告)日：2010-08-10
申请号：US10269960
申请日：2002-10-15
申请人： Kyojiro Nambu , Yoshihiro Ikeda
发明人： Kyojiro Nambu , Yoshihiro Ikeda
IPC分类号： A61B5/05
CPC分类号： A61B6/463 , A61B6/481 , A61B6/504 , A61B6/507 , G06T5/002 , G06T5/009 , G06T5/20 , G06T5/50 , G06T7/0012 , G06T2207/10081 , G06T2207/30016 , G06T2207/30104
摘要： First time-density curves concerning arteries in a specific region and second time-density curves concerning tissues in the specific region are prepared from a plurality of continuous images concerning the specific region of a subject into which a contrast medium is injected. Modulation transfer functions indicating local blood flow circulations in the tissues with respect to the arteries are calculated by curve-fitting so that residual errors of the second time-density curves are minimized with respect to convolution of the modulation transfer functions and first time-density curves. Indices concerning the local blood flow circulations with respect to the respective arteries are calculated from the modulation transfer functions. Maps of the indices for the arteries are prepared, and the maps of these indices are synthesized into one map in accordance with the residual errors for the first time-density curves.
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公开(公告)号：US20100091402A1
公开(公告)日：2010-04-15
申请号：US12653216
申请日：2009-12-09
申请人： Hong Deng , Yoshihiro Ikeda , Mary Frances Minardi , Kentaro Takano , Kai Tang
发明人： Hong Deng , Yoshihiro Ikeda , Mary Frances Minardi , Kentaro Takano , Kai Tang
CPC分类号： G11B5/667 , G11B5/7325
摘要： The invention uses an adhesion layer of an amorphous alloy of aluminum. A first aluminum titanium embodiment of the amorphous adhesion layer preferably contains approximately equal amounts of aluminum and titanium (+/−5 at. %). A second embodiment of the amorphous adhesion layer preferably contains approximately equal amounts of aluminum and titanium (+/−5 at. %) and up to 10 at. % Zr with 5 at. % Zr being preferred. A third embodiment is aluminum tantalum preferably including from 15 to 25 at. % tantalum with 20 at. % being preferred. The most preferred compositions are Al50Ti50, Al47.5Ti47.5Zr5 or Al80Ta20. The adhesion layer is deposited onto the substrate. The substrate can be glass or a metal such as NiP-plated AlMg. The preferred embodiment of media according to the invention is for perpendicular recording and includes a magnetically soft underlayer deposited above the adhesion layer.
摘要翻译： 本发明使用铝非晶合金的粘合层。 无定形粘合层的第一铝钛实施例优选含有大约相等量的铝和钛（+/- 5原子％）。 无定形粘合层的第二个实施方案优选含有大约相等量的铝和钛（+/- 5原子％）和至多10原子。 ％Zr，5 at。 ％Zr是优选的。 第三实施例是铝钽，优选包括15至25at。 20％钽。 ％是首选。 最优选的组合物是Al 50 Ti 50，Al 47.5 Ti 47.5 Zr 5或Al 80 T a 20。 粘附层沉积在基底上。 基底可以是玻璃或诸如NiP镀AlMg的金属。 根据本发明的介质的优选实施例是用于垂直记录，并且包括沉积在粘附层上方的磁软底层。
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40.发明申请公开(公告)号：US20100063795A1
公开(公告)日：2010-03-11
申请号：US11996484
申请日：2006-08-02
申请人： Yousuke SAKAO , Takahiro IKEDA , Yoshihiro IKEDA , Kenji SATOH
发明人： Yousuke SAKAO , Takahiro IKEDA , Yoshihiro IKEDA , Kenji SATOH
IPC分类号： G06F17/27
CPC分类号： G06F17/2785 , G06F17/30616
摘要： [PROBLEMS] To provide a data processing device such as a text mining device capable of extracting characteristic structures properly even in case a plurality of words indicating identical contents or a plurality of words semantically associated are contained in input data. [MEANS FOR SOLVING PROBLEMS] Association node extraction unit (22) of a text mining device (10) extracts association nodes containing semantically associated words from a graph obtained as a result of syntax analysis. Association node joint unit (23) transforms the graph by joint of a part of or a whole of the association nodes. Characteristic structure extraction unit (24) extracts a characteristic structure from the graph transformed by the association node joint unit.
摘要翻译： 提供一种即使在输入数据中包含指示相同内容或多个词语义相关联的多个单词的情况下能够适当地提取特征结构的文本挖掘设备等数据处理设备。 [解决问题的手段]文本挖掘装置（10）的关联节点提取单元（22）从作为语法分析的结果获得的图形中提取包含语义关联词的关联节点。 关联节点联合单元（23）通过关联节点的一部分或全部的联合来变换图。 特征结构提取单元（24）从由关联节点联合单元变换的图中提取特征结构。
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