公开(公告)号：US10755922B2

公开(公告)日：2020-08-25

申请号：US16427288

申请日：2019-05-30

Applicant: ASM IP Holding B.V.

Inventor： Timothee Julien Vincent Blanquart ,  Mitsuya Utsuno ,  Yoshio Susa ,  Atsuki Fukazawa ,  Toshio Nakanishi

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/762 ,  H01L21/768 ,  C23C16/26 ,  C23C16/50

Abstract: A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.