公开(公告)号：US20140346527A1

公开(公告)日：2014-11-27

申请号：US14454524

申请日：2014-08-07

Applicant: Avogy, Inc.

Inventor： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Richard J. Brown ,  Donald R. Disney

IPC: H01L29/06 ,  H01L29/20 ,  H01L29/868

CPC classification number: H01L29/868 ,  H01L29/0615 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/66204 ,  H01L29/66212 ,  H01L29/6631 ,  H01L29/66924

Abstract: A III-nitride semiconductor device includes an active region for supporting current flow during forward-biased operation of the III-nitride semiconductor device. The active region includes a first III-nitride epitaxial material having a first conductivity type, and a second III-nitride epitaxial material having a second conductivity type. The III-nitride semiconductor device further includes an edge-termination region physically adjacent to the active region and including an implanted region comprising a portion of the first III-nitride epitaxial material. The implanted region of the first III-nitride epitaxial material has a reduced electrical conductivity in relation to portions of the first III-nitride epitaxial material adjacent to the implanted region

Abstract translation: III族氮化物半导体器件包括用于在III族氮化物半导体器件的正向偏置操作期间支持电流的有源区域。 有源区包括具有第一导电类型的第一III族氮化物外延材料和具有第二导电类型的第二III族氮化物外延材料。 III族氮化物半导体器件还包括物理地邻近有源区的边缘终端区，并且包括包含第一III族氮化物外延材料的一部分的注入区。 第一III族氮化物外延材料的注入区域相对于邻近于注入区域的第一III族氮化物外延材料的部分具有降低的导电性

公开(公告)号：US20140145201A1

公开(公告)日：2014-05-29

申请号：US13689574

申请日：2012-11-29

Applicant: AVOGY, INC.

Inventor： Hui Nie ,  Andrew P. Edwards ,  David P. Bour ,  Isik C. Kizilyalli ,  Richard J. Brown ,  Thomas R. Prunty

IPC: H01L29/78 ,  H01L29/20 ,  H01L21/36

CPC classification number: H01L29/2003 ,  H01L29/66446 ,  H01L29/8083

Abstract: A semiconductor structure includes a III-nitride substrate and a first III-nitride epitaxial layer of a first conductivity type coupled to the III-nitride substrate. The semiconductor structure also includes a first III-nitride epitaxial structure of the first conductivity type coupled to the first III-nitride epitaxial layer and a second III-nitride epitaxial structure of the first conductivity type coupled to the first III-nitride epitaxial structure. The semiconductor structure further includes a second III-nitride epitaxial layer coupled to the first III-nitride epitaxial structure. The second III-nitride epitaxial layer is of a second conductivity type and is not electrically connected to the second III-nitride epitaxial structure.

Abstract translation: 半导体结构包括III族氮化物衬底和与III族氮化物衬底耦合的第一导电类型的第一III族氮化物外延层。 半导体结构还包括耦合到第一III族氮化物外延层的第一导电类型的第一III族氮化物外延结构和耦合到第一III族氮化物外延结构的第一导电类型的第二III族氮化物外延结构。 半导体结构还包括耦合到第一III族氮化物外延结构的第二III族氮化物外延层。 第二III族氮化物外延层是第二导电类型并且不与第二III族氮化物外延结构电连接。

公开(公告)号：US09330918B2

公开(公告)日：2016-05-03

申请号：US14558393

申请日：2014-12-02

Applicant: Avogy, Inc.

Inventor： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

IPC: H01L21/265 ,  H01L29/66 ,  H01L29/808 ,  H01L29/868 ,  H01L29/872 ,  H01L29/06 ,  H01L29/20

CPC classification number: H01L21/2654 ,  H01L29/0619 ,  H01L29/0642 ,  H01L29/2003 ,  H01L29/66143 ,  H01L29/6631 ,  H01L29/66446 ,  H01L29/66856 ,  H01L29/8083 ,  H01L29/868 ,  H01L29/872

Abstract: A method of making an edge terminated semiconductor device includes providing a GaN substrate having a GaN epitaxial layer grown thereon and exposing a portion of the GaN epitaxial layer to ion implantation. The energy dose is selected to provide a resistivity that is at least 90% of maximum achievable resistivity. The method also includes depositing a conductive layer over a portion of the implanted region.

Abstract translation: 制造边缘端接的半导体器件的方法包括提供其上生长有GaN外延层的GaN衬底，并将GaN外延层的一部分暴露于离子注入。 选择能量剂量以提供至少达到最大可实现电阻率的90％的电阻率。 该方法还包括在植入区域的一部分上沉积导电层。

公开(公告)号：US09287389B2

公开(公告)日：2016-03-15

申请号：US14611041

申请日：2015-01-30

Applicant: Avogy, Inc.

Inventor： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

IPC: H01L29/20 ,  H01L29/772 ,  H01L21/20 ,  H01L29/66 ,  H01L21/02 ,  H01L29/808 ,  H01L29/872 ,  H01L29/10

CPC classification number: H01L29/66909 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/66212 ,  H01L29/66893 ,  H01L29/66924 ,  H01L29/8083 ,  H01L29/872

Abstract: A method of growing a III-nitride-based epitaxial structure is disclosed. The method includes forming a GaN-based drift layer coupled to the GaN-based substrate, where forming the GaN-based drift layer comprises doping the drift layer with indium to cause the indium concentration of the drift layer to be less than about 1×1016 cm−3 and to cause the carbon concentration of the drift layer to be less than about 1×1016 cm−3. The method also includes forming an n-type channel layer coupled to the GaN-based drift layer, forming an n-contact layer coupled to the GaN-based drift layer, and forming a second electrical contact electrically coupled to the n-contact layer.

Abstract translation: 公开了一种生长III族氮化物基外延结构的方法。 该方法包括形成耦合到GaN基衬底的GaN基漂移层，其中形成GaN基漂移层包括用铟掺杂漂移层以使漂移层的铟浓度小于约1×1016 cm -3，并使漂移层的碳浓度小于约1×10 16 cm -3。 该方法还包括形成耦合到GaN基漂移层的n型沟道层，形成耦合到GaN基漂移层的n型接触层，以及形成电耦合到n型接触层的第二电接触。

公开(公告)号：US20150364612A1

公开(公告)日：2015-12-17

申请号：US14834306

申请日：2015-08-24

Applicant: Avogy, Inc.

Inventor： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Richard J. Brown ,  Donald R. Disney

IPC: H01L29/868 ,  H01L29/06 ,  H01L29/20

CPC classification number: H01L29/868 ,  H01L29/0615 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/66204 ,  H01L29/66212 ,  H01L29/6631 ,  H01L29/66924

Abstract: A III-nitride semiconductor device includes an active region for supporting current flow during forward-biased operation of the III-nitride semiconductor device. The active region includes a first III-nitride epitaxial material having a first conductivity type, and a second III-nitride epitaxial material having a second conductivity type. The III-nitride semiconductor device further includes an edge-termination region physically adjacent to the active region and including an implanted region comprising a portion of the first III-nitride epitaxial material. The implanted region of the first III-nitride epitaxial material has a reduced electrical conductivity in relation to portions of the first III-nitride epitaxial material adjacent to the implanted region

Abstract translation: III族氮化物半导体器件包括用于在III族氮化物半导体器件的正向偏置操作期间支持电流的有源区域。 有源区包括具有第一导电类型的第一III族氮化物外延材料和具有第二导电类型的第二III族氮化物外延材料。 III族氮化物半导体器件还包括物理地邻近有源区的边缘终端区，并且包括包含第一III族氮化物外延材料的一部分的注入区。 第一III族氮化物外延材料的注入区域相对于邻近于注入区域的第一III族氮化物外延材料的部分具有降低的导电性

公开(公告)号：US09059199B2

公开(公告)日：2015-06-16

申请号：US13735912

申请日：2013-01-07

Applicant: AVOGY, Inc.

Inventor： Hui Nie ,  Andrew P. Edwards ,  Isik Kizilyalli ,  David P. Bour ,  Thomas R. Prunty ,  Quentin Diduck

IPC: H01L29/66 ,  H01L29/808

CPC classification number: H01L29/66462 ,  H01L21/02389 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/0696 ,  H01L29/122 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/66431 ,  H01L29/66909 ,  H01L29/66924 ,  H01L29/8083

Abstract: A vertical JFET includes a GaN substrate comprising a drain of the JFET and a plurality of patterned epitaxial layers coupled to the GaN substrate. A distal epitaxial layer comprises a first part of a source channel and adjacent patterned epitaxial layers are separated by a gap having a predetermined distance. The vertical JFET also includes a plurality of regrown epitaxial layers coupled to the distal epitaxial layer and disposed in at least a portion of the gap. A proximal regrown epitaxial layer comprises a second part of the source channel. The vertical JFET further includes a source contact passing through portions of a distal regrown epitaxial layer and in electrical contact with the source channel, a gate contact in electrical contact with a distal regrown epitaxial layer, and a drain contact in electrical contact with the GaN substrate.

Abstract translation: 垂直JFET包括包括JFET的漏极和耦合到GaN衬底的多个图案化外延层的GaN衬底。 远端外延层包括源通道的第一部分，并且相邻的图案化外延层被具有预定距离的间隙分开。 垂直JFET还包括耦合到远端外延层并且设置在间隙的至少一部分中的多个再生长的外延层。 近端再生长的外延层包括源通道的第二部分。 垂直JFET还包括通过远端再生长外延层的部分并与源极沟道电接触的源极接触，与远端再生长的外延层电接触的栅极接触，以及与GaN衬底电接触的漏极接触 。

公开(公告)号：US09029210B2

公开(公告)日：2015-05-12

申请号：US14302270

申请日：2014-06-11

Applicant: AVOGY, INC.

Inventor： Hui Nie ,  Andrew P. Edwards ,  Donald R. Disney ,  Isik C. Kizilyalli

IPC: H01L21/02 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/778 ,  H01L29/06

CPC classification number: H01L21/0254 ,  H01L21/02664 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/0657 ,  H01L29/7786 ,  Y10S438/978

Abstract: A semiconductor device includes a III-nitride substrate of a first conductivity type, a first III-nitride epitaxial layer of the first conductivity type coupled to the III-nitride substrate, and a first III-nitride epitaxial structure coupled to a first portion of a surface of the first III-nitride epitaxial layer. The first III-nitride epitaxial structure has a sidewall. The semiconductor device further includes a second III-nitride epitaxial structure of the first conductivity type coupled to the first III-nitride epitaxial structure, a second III-nitride epitaxial layer of the first conductivity type coupled to the sidewall of the second III-nitride epitaxial layer and a second portion of the surface of the first III-nitride epitaxial layer, and a third III-nitride epitaxial layer of a second conductivity type coupled to the second III-nitride epitaxial layer. The semiconductor device also includes one or more dielectric structures coupled to a surface of the third III-nitride epitaxial layer.

Abstract translation: 半导体器件包括第一导电类型的III族氮化物衬底，耦合到III族氮化物衬底的第一导电类型的第一III族氮化物外延层和耦合到第一III族氮化物外延结构的第一部分 第一III族氮化物外延层的表面。 第一III族氮化物外延结构具有侧壁。 半导体器件还包括耦合到第一III族氮化物外延结构的第一导电类型的第二III族氮化物外延结构，第一导电类型的第二III族氮化物外延层耦合到第二III族氮化物外延的侧壁 层和第一III族氮化物外延层的表面的第二部分，以及耦合到第二III族氮化物外延层的第二导电类型的第三III族氮化物外延层。 半导体器件还包括耦合到第三III族氮化物外延层的表面的一个或多个电介质结构。

公开(公告)号：US20140295652A1

公开(公告)日：2014-10-02

申请号：US14302270

申请日：2014-06-11

Applicant: AVOGY, INC.

Inventor： Hui Nie ,  Andrew P. Edwards ,  Donald R. Disney ,  Isik C. Kizilyalli

IPC: H01L21/02

CPC classification number: H01L21/0254 ,  H01L21/02664 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/0657 ,  H01L29/7786 ,  Y10S438/978

Abstract: A semiconductor device includes a III-nitride substrate of a first conductivity type, a first III-nitride epitaxial layer of the first conductivity type coupled to the III-nitride substrate, and a first III-nitride epitaxial structure coupled to a first portion of a surface of the first III-nitride epitaxial layer. The first III-nitride epitaxial structure has a sidewall. The semiconductor device further includes a second III-nitride epitaxial structure of the first conductivity type coupled to the first III-nitride epitaxial structure, a second III-nitride epitaxial layer of the first conductivity type coupled to the sidewall of the second III-nitride epitaxial layer and a second portion of the surface of the first III-nitride epitaxial layer, and a third III-nitride epitaxial layer of a second conductivity type coupled to the second III-nitride epitaxial layer. The semiconductor device also includes one or more dielectric structures coupled to a surface of the third III-nitride epitaxial layer.

Abstract translation: 半导体器件包括第一导电类型的III族氮化物衬底，耦合到III族氮化物衬底的第一导电类型的第一III族氮化物外延层和耦合到第一III族氮化物外延结构的第一部分 第一III族氮化物外延层的表面。 第一III族氮化物外延结构具有侧壁。 半导体器件还包括耦合到第一III族氮化物外延结构的第一导电类型的第二III族氮化物外延结构，第一导电类型的第二III族氮化物外延层耦合到第二III族氮化物外延的侧壁 层和第一III族氮化物外延层的表面的第二部分，以及耦合到第二III族氮化物外延层的第二导电类型的第三III族氮化物外延层。 半导体器件还包括耦合到第三III族氮化物外延层的表面的一个或多个电介质结构。

公开(公告)号：US20140287570A1

公开(公告)日：2014-09-25

申请号：US14299773

申请日：2014-06-09

Applicant: Avogy, Inc.

Inventor： Andrew P. Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

IPC: H01L29/66 ,  H01L29/872 ,  H01L29/868 ,  H01L29/47

CPC classification number: H01L29/66143 ,  H01L21/046 ,  H01L21/0495 ,  H01L29/2003 ,  H01L29/47 ,  H01L29/475 ,  H01L29/868 ,  H01L29/872

Abstract: A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a III-nitride epitaxial structure including a first III-nitride epitaxial layer coupled to the first side of the III-nitride substrate and a plurality of III-nitride regions of a second conductivity type. The plurality of III-nitride regions have at least one III-nitride epitaxial region of the first conductivity type between each of the plurality of III-nitride regions. The semiconductor structure further includes a first metallic structure electrically coupled to one or more of the plurality of III-nitride regions and the at least one III-nitride epitaxial region. A Schottky contact is created between the first metallic structure and the at least one III-nitride epitaxial region.

Abstract translation: 半导体结构包括具有第一侧和与第一侧相对的第二侧的III族氮化物衬底。 III族氮化物衬底的特征在于第一导电类型和第一掺杂剂浓度。 半导体结构还包括III族氮化物外延结构，其包括耦合到III族氮化物衬底的第一侧的第一III族氮化物外延层和多个第二导电类型的III族氮化物区域。 多个III族氮化物区域在多个III族氮化物区域中的每一个之间具有至少一个第一导电类型的III族氮化物外延区域。 半导体结构还包括电耦合到多个III族氮化物区域和至少一个III族氮化物外延区域中的一个或多个的第一金属结构。 在第一金属结构和至少一个III族氮化物外延区之间产生肖特基接触。

公开(公告)号：US20140206179A1

公开(公告)日：2014-07-24

申请号：US14220564

申请日：2014-03-20

Applicant: AVOGY, INC.

Inventor： Hui Nie ,  Andrew P. Edwards ,  Donald R. Disney ,  Richard J. Brown ,  Isik C. Kizilyalli

IPC: H01L21/02

CPC classification number: H01L21/0254 ,  H01L21/2654 ,  H01L21/266 ,  H01L29/0611 ,  H01L29/0642 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/66204 ,  H01L29/66212 ,  H01L29/66924 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/872

Abstract: A semiconductor structure includes a GaN substrate having a first surface and a second surface opposing the first surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a first GaN epitaxial layer of the first conductivity type coupled to the second surface of the GaN substrate and a second GaN epitaxial layer of a second conductivity type coupled to the first GaN epitaxial layer. The second GaN epitaxial layer includes an active device region, a first junction termination region characterized by an implantation region having a first implantation profile, and a second junction termination region characterized by an implantation region having a second implantation profile.

Abstract translation: 半导体结构包括具有第一表面和与第一表面相对的第二表面的GaN衬底。 GaN衬底的特征在于第一导电类型和第一掺杂剂浓度。 半导体结构还包括耦合到GaN衬底的第二表面的第一导电类型的第一GaN外延层和耦合到第一GaN外延层的第二导电类型的第二GaN外延层。 第二GaN外延层包括有源器件区，第一结端接区，其特征在于具有第一注入分布的注入区，以及第二结终端区，其特征在于具有第二注入分布的注入区。