公开(公告)号：US4797787A

公开(公告)日：1989-01-10

申请号：US758030

申请日：1985-07-23

申请人： Ichio Shimizu

发明人： Ichio Shimizu

IPC分类号： H01L23/50 ,  H01F3/00 ,  H01F7/16 ,  H01L21/60 ,  H01L23/495 ,  H05K5/02

CPC分类号： H01L24/85 ,  H01F3/00 ,  H01F7/1607 ,  H01L23/49544 ,  H01L24/78 ,  H01L2224/05554 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/49171 ,  H01L2224/78301 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/351

摘要： A lead frame and an electronic device incorporating the lead frame wherein the lead frame includes a chip support and a plurality of leads arranged around the chip support with each of the plurality of leads having one end disposed proximate to the chip support. The one end of at least one of the plurality of leads includes a first lead portion extending in a direction toward the chip support and a second lead portion contiguous with the first lead portion. The second lead portion extends in a direction away from the chip support so that the one of the lead has a bent shape.

摘要翻译： 引线框架和结合引线框架的电子器件，其中引线框架包括芯片支撑件和布置在芯片支撑件周围的多个引线，其中多个引线中的每一个引线具有靠近芯片支撑件设置的一端。 多个引线中的至少一个引线的一端包括沿朝向芯片支撑件的方向延伸的第一引线部分和与第一引线部分邻接的第二引线部分。 第二引线部分沿远离芯片支撑件的方向延伸，使得引线中的一个具有弯曲形状。

公开(公告)号：US08138600B2

公开(公告)日：2012-03-20

申请号：US11776393

申请日：2007-07-11

申请人： Akira Muto ,  Ichio Shimizu ,  Tetsuo Iljima ,  Toshiyuki Hata ,  Katsuo Ishizaka

发明人： Akira Muto ,  Ichio Shimizu ,  Tetsuo Iljima ,  Toshiyuki Hata ,  Katsuo Ishizaka

IPC分类号： H01L23/34

CPC分类号： H01L23/49562 ,  H01L21/565 ,  H01L23/49524 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05553 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device is provided, which is capable of improving mounting flexibility relatively and increasing general versatility, as well as realizing heat radiation characteristics and low on-resistance. Moreover, the semiconductor device is provided, which is capable of improving reliability, performing processing in manufacturing processes easily and reducing manufacturing costs. Also, the semiconductor device capable of decreasing the mounting area is provided. A semiconductor chip in which an IGBT is formed and a semiconductor chip in which a diode is formed are mounted over a die pad. Then, the semiconductor chip and the semiconductor chip are connected by using a clip. The clip is arranged so as not to overlap with bonding pads formed at the semiconductor chip in a flat state. The bonding pads formed at the semiconductor chip are connected to electrodes by using wires.

摘要翻译： 提供了一种半导体器件，其能够相对地提高安装灵活性并增加通用性，并且实现热辐射特性和低导通电阻。 此外，提供了能够提高可靠性，容易地进行制造工艺的处理并降低制造成本的半导体器件。 此外，还提供了能够减小安装面积的半导体器件。 其中形成IGBT的半导体芯片和其中形成有二极管的半导体芯片安装在管芯焊盘上。 然后，使用夹子连接半导体芯片和半导体芯片。 夹子被布置成不与形成在半导体芯片处的平坦状态的接合焊盘重叠。 通过使用导线将形成在半导体芯片上的接合焊盘连接到电极。

公开(公告)号：US20100181628A1

公开(公告)日：2010-07-22

申请号：US12691168

申请日：2010-01-21

申请人： Kenya Kawano ,  Kisho Ashida ,  Kuniharu Muto ,  Ichio Shimizu ,  Tomibumi Inoue

发明人： Kenya Kawano ,  Kisho Ashida ,  Kuniharu Muto ,  Ichio Shimizu ,  Tomibumi Inoue

IPC分类号： H01L23/495 ,  H01L23/48

CPC分类号： H01L24/85 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/83 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78703 ,  H01L2224/83801 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85385 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/83205 ,  H01L2224/85399 ,  H01L2224/05599 ,  H01L2924/206

摘要： Prevention of disconnection of a bonding wire resulting from adhesive interface delamination between a resin and a leadframe, and improvement of joint strength of the resin and the leadframe are achieved in a device manufactured by a low-cost and simple processing. A boss is provided on a source lead by a stamping processing, and a support pillar is provided in a concave portion on a rear side of the source lead in order to prevent ultrasonic damping upon joining the bonding wire onto the boss, so that an insufficiency of the joint strength between the bonding wire and the source lead is prevented. Also, a continuous bump is provided on the boss so as to surround a joint portion between the source lead and the bonding wire, so that disconnection of the bonding wire resulting from delamination between the resin and the source lead is prevented.

摘要翻译： 在通过低成本且简单的加工制造的装置中，可以防止树脂与引线框之间的粘合剂界面分层导致的接合线的断开，提高树脂和引线框的接合强度。 通过冲压加工在源极上设置凸台，并且在源极的后侧的凹部设置支撑柱，以便在将接合线接合到凸台上时防止超声波阻尼，使得不足 阻止了接合线和源极之间的接合强度。 此外，在凸台上设置连续凸块，以围绕源极引线和接合线之间的接合部分，从而防止由树脂和源极引线之间的分层导致的接合线的断开。

公开(公告)号：US07432594B2

公开(公告)日：2008-10-07

申请号：US11173740

申请日：2005-06-30

申请人： Kisho Ashida ,  Akira Muto ,  Ichio Shimizu ,  Toshiyuki Hata ,  Kenya Kawano ,  Naotaka Tanaka ,  Nae Hisano

发明人： Kisho Ashida ,  Akira Muto ,  Ichio Shimizu ,  Toshiyuki Hata ,  Kenya Kawano ,  Naotaka Tanaka ,  Nae Hisano

IPC分类号： H01L23/52 ,  H01L29/40

CPC分类号： H01L24/40 ,  H01L21/566 ,  H01L23/49562 ,  H01L24/37 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/3754 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A semiconductor device has a semiconductor chip including first and second surfaces opposed to each other in a thickness direction of the semiconductor chip, wherein the first and second surfaces include first and second electrode surfaces respectively, and first and second electrically conductive members covering the first and second electrode surfaces respectively as seen in the thickness direction to be electrically connected to the first and second electrode surfaces respectively.

摘要翻译： 半导体器件具有包括在半导体芯片的厚度方向上彼此相对的第一和第二表面的半导体芯片，其中第一和第二表面分别包括第一和第二电极表面，第一和第二导电构件覆盖第一和第二表面 第二电极表面分别在厚度方向上看到以分别电连接到第一和第二电极表面。

公开(公告)号：US20080220568A1

公开(公告)日：2008-09-11

申请号：US12117359

申请日：2008-05-08

申请人： Akira MUTO ,  Ichio Shimizu ,  Katsuo Arai ,  Hidemasa Kagii ,  Hiroshi Sato ,  Hiroyuki Nakamura ,  Takuya Nakajo ,  Keiichi Okawa ,  Masahiko Osaka

发明人： Akira MUTO ,  Ichio Shimizu ,  Katsuo Arai ,  Hidemasa Kagii ,  Hiroshi Sato ,  Hiroyuki Nakamura ,  Takuya Nakajo ,  Keiichi Okawa ,  Masahiko Osaka

IPC分类号： H01L23/28

CPC分类号： H01L23/49562 ,  H01L23/3107 ,  H01L23/49537 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/84 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01067 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A semiconductor device in the form of a resin sealed semiconductor package is disclosed, wherein a gate terminal connected to a gate pad electrode formed on a surface of a semiconductor chip and a source terminal connected to a source pad electrode formed on the chip surface exposed to a back surface of a sealing resin portion, a first portion of a drain terminal connected to a back-surface drain electrode of the semiconductor chip is exposed to an upper surface of the sealing resin portion, and a second portion of the drain terminal formed integrally with the first portion of the drain terminal is exposed to the back surface of the sealing resin portion. When forming the sealing resin portion in such a semiconductor device, first the sealing resin portion is formed so as to also cover an upper surface of the first portion of the drain terminal and thereafter the upper surface side of the sealing resin portion is polished by liquid honing, thereby allowing the upper surface of the first portion of the drain terminal to be exposed on the upper surface of the sealing resin portion. Both heat dissipating property and production yield of the semiconductor device are improved.

摘要翻译： 公开了一种树脂密封半导体封装形式的半导体器件，其中连接到形成在半导体芯片的表面上的栅极焊盘电极的栅极端子和连接到形成在芯片表面上的源极焊盘电极的源极端子暴露于 密封树脂部分的背面，连接到半导体芯片的背面漏电极的漏极端子的第一部分暴露于密封树脂部分的上表面，并且漏极端子的第二部分整体地形成 漏极端子的第一部分暴露于密封树脂部分的背面。 当在这种半导体器件中形成密封树脂部分时，首先形成密封树脂部分，以便也覆盖漏极端子的第一部分的上表面，此后密封树脂部分的上表面侧被液体 从而允许排水端子的第一部分的上表面暴露在密封树脂部分的上表面上。 改善了半导体器件的散热性能和生产成本。

公开(公告)号：US07374965B2

公开(公告)日：2008-05-20

申请号：US11348362

申请日：2006-02-07

申请人： Akira Muto ,  Ichio Shimizu ,  Katsuo Arai ,  Hidemasa Kagii ,  Hiroshi Sato ,  Hiroyuki Nakamura ,  Takuya Nakajo ,  Keiichi Okawa ,  Masahiko Osaka

发明人： Akira Muto ,  Ichio Shimizu ,  Katsuo Arai ,  Hidemasa Kagii ,  Hiroshi Sato ,  Hiroyuki Nakamura ,  Takuya Nakajo ,  Keiichi Okawa ,  Masahiko Osaka

IPC分类号： H01L21/00

CPC分类号： H01L23/49562 ,  H01L23/3107 ,  H01L23/49537 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/84 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01067 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A semiconductor device in the form of a resin sealed semiconductor package is disclosed, wherein a gate terminal connected to a gate pad electrode formed on a surface of a semiconductor chip and a source terminal connected to a source pad electrode formed on the chip surface exposed to a back surface of a sealing resin portion, a first portion of a drain terminal connected to a back-surface drain electrode of the semiconductor chip is exposed to an upper surface of the sealing resin portion, and a second portion of the drain terminal formed integrally with the first portion of the drain terminal is exposed to the back surface of the sealing resin portion. When forming the sealing resin portion in such a semiconductor device, first the sealing resin portion is formed so as to also cover an upper surface of the first portion of the drain terminal and thereafter the upper surface side of the sealing resin portion is polished by liquid honing, thereby allowing the upper surface of the first portion of the drain terminal to be exposed on the upper surface of the sealing resin portion. Both heat dissipating property and production yield of the semiconductor device are improved.

摘要翻译： 公开了一种树脂密封半导体封装形式的半导体器件，其中连接到形成在半导体芯片的表面上的栅极焊盘电极的栅极端子和连接到形成在芯片表面上的源极焊盘电极的源极端子暴露于 密封树脂部分的背面，连接到半导体芯片的背面漏电极的漏极端子的第一部分暴露于密封树脂部分的上表面，并且漏极端子的第二部分整体地形成 漏极端子的第一部分暴露于密封树脂部分的背面。 当在这种半导体器件中形成密封树脂部分时，首先形成密封树脂部分，以便也覆盖漏极端子的第一部分的上表面，此后密封树脂部分的上表面侧被液体 从而允许排水端子的第一部分的上表面暴露在密封树脂部分的上表面上。 改善了半导体器件的散热性能和生产成本。

公开(公告)号：US06849933B2

公开(公告)日：2005-02-01

申请号：US10188805

申请日：2002-07-05

申请人： Nobuya Koike ,  Ichio Shimizu

发明人： Nobuya Koike ,  Ichio Shimizu

IPC分类号： H01L23/28 ,  H01L23/00 ,  H01L23/29 ,  H01L23/433 ,  H01L23/495 ,  H01L23/10 ,  H01L23/34

CPC分类号： H01L23/562 ,  H01L23/4334 ,  H01L23/49503 ,  H01L23/49548 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/05554 ,  H01L2224/16 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device of a high heat radiation type having improved reliability is disclosed. The semiconductor device comprises a semiconductor chip with plural bonding pads formed thereon, plural inner leads, plural bonding wires for connecting the bonding pads and the inner leads with each other, a heat spreader having a chip supporting surface for supporting the semiconductor chip and also having a rear surface exposed to the exterior, a chip bonding material for bonding the semiconductor chip and the heat spreader with each other, a resin body which seals the semiconductor chip with a sealing resin, and plural outer leads projecting to the exterior from the resin body. A protruding portion protruding upward from the chip supporting surface is formed around the chip on the chip supporting surface of the heat spreader, thereby relieving a thermal stress imposed on an end portion of the chip bonding material and improving the reliability of a QFP as the semiconductor device.

摘要翻译： 公开了具有提高的可靠性的高放热型半导体器件。 半导体器件包括：多个接合焊盘形成的半导体芯片，多个内部引线，用于将接合焊盘和内部引线彼此连接的多个接合线，具有用于支撑半导体芯片的芯片支撑表面的散热器，并且还具有 暴露于外部的后表面，用于将半导体芯片和散热器彼此接合的芯片接合材料，用密封树脂密封半导体芯片的树脂体和从树脂体向外部突出的多个外部引线 。 在散热器的芯片支撑面上的芯片的周围形成有从芯片支撑面向上方突出的突出部，从而减轻了施加在芯片接合材料的端部上的热应力，提高了作为半导体的QFP的可靠性 设备。

公开(公告)号：US06838315B2

公开(公告)日：2005-01-04

申请号：US09910833

申请日：2001-07-24

申请人： Tadatoshi Danno ,  Katsuo Arai ,  Ichio Shimizu

发明人： Tadatoshi Danno ,  Katsuo Arai ,  Ichio Shimizu

IPC分类号： H01L23/28 ,  H01L21/56 ,  H01L21/60 ,  H01L21/68 ,  H01L23/12 ,  H01L23/31 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L21/568 ,  H01L21/561 ,  H01L21/565 ,  H01L23/3107 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2224/05554 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/16 ,  H01L2224/16245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18165 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/00012

摘要： A method of manufacturing a semiconductor device comprises a step of preparing a substrate in which a plurality of electrode members are individually placed on one main surface thereof in separated form, a step of placing a semiconductor chip on the one main surface of the substrate and electrically connecting a plurality of electrodes formed on one main surface of the semiconductor chip and the plurality of electrode members respectively, a step of forming a resin encapsulater for sealing the semiconductor chip and the plurality of electrode members on the one main surface of the substrate, and a step of separating the semiconductor chip and the plurality of electrode members from the substrate together with the resin encapsulater.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：制备其中多个电极构件以分离形式分别放置在其一个主表面上的基板的步骤，将半导体芯片放置在基板的一个主表面上并电 连接形成在半导体芯片的一个主表面上的多个电极和多个电极部件，形成用于密封半导体芯片的树脂密封剂和在基板的一个主表面上的多个电极部件的步骤，以及 将半导体芯片和多个电极部件与树脂封装体一起从基板分离的工序。

公开(公告)号：US06710429B2

公开(公告)日：2004-03-23

申请号：US09881716

申请日：2001-06-18

申请人： Masahiro Saito ,  Toru Nagamine ,  Ichio Shimizu

发明人： Masahiro Saito ,  Toru Nagamine ,  Ichio Shimizu

IPC分类号： H01L23495

CPC分类号： H01L23/3107 ,  H01L21/565 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device is provided with outer leads which show themselves in the bottom surface of the resin encapsulated body. This structure eliminates minute chipping and cracking near the resin which has been cut in the vicinity of the end of the outer lead. The semiconductor device is produced in such a way that a push-back-portion is previously arranged between leads of the lead frame and the push-back-portion is pushed down after molding. The resulting semiconductor device has outer leads such that there is no encapsulating resin between outer leads which show themselves in the bottom surface of the resin encapsulated body.

摘要翻译： 半导体器件设置有外引线，其显示在树脂封装体的底表面中。 这种结构消除了在外部引线的端部附近被切割的树脂附近的微小的碎裂和裂纹。 制造半导体器件的方式是在引线框架的引线之间预先布置有推回部分，并且在模制之后将推回部分向下推。 所得半导体器件具有外引线，使得在外引线之间不存在封装树脂，外引线显示在树脂封装体的底表面中。

公开(公告)号：US5808359A

公开(公告)日：1998-09-15

申请号：US547774

申请日：1995-10-25

申请人： Kuniharu Muto ,  Atsushi Nishikizawa ,  Jyunichi Tsuchiya ,  Toshiyuki Hata ,  Nobuya Koike ,  Ichio Shimizu

发明人： Kuniharu Muto ,  Atsushi Nishikizawa ,  Jyunichi Tsuchiya ,  Toshiyuki Hata ,  Nobuya Koike ,  Ichio Shimizu

IPC分类号： H01L23/28 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L21/56 ,  H01L21/60 ,  H01L23/02 ,  H01L23/29 ,  H01L23/433 ,  H01L23/495 ,  H01L23/36 ,  H01L23/34 ,  H01L23/50

CPC分类号： H01L23/4334 ,  H01L21/565 ,  H01L23/49541 ,  H01L2224/05554 ,  H01L2224/05639 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/181

摘要： A QFP adapted to lowering the heat resistance and increasing the number of pins includes a heat-radiating metal plate having bumpers formed at the four corners thereof as a unitary structure, a semiconductor chip mounted on the heat-radiating metal plate, leads provided on the heat-radiating metal plate and surrounding the peripheries of the semiconductor chip, bonding wires for connecting the leads to the semiconductor chip, and a sealing resin member for sealing part of the semiconductor chip, inner leads of the leads, bonding wires and part of the heat-radiating metal plate. The tips of the bumpers integrally formed with the heat-radiating metal plate are positioned outside the tips of the outer leads that are protruding from the sealing resin member. In the QFP producing method, the heat-radiating metal plate having the bumpers and the lead frame having the leads are secured outside the sealing resin member.

摘要翻译： 适于降低耐热性和增加引脚数量的QFP包括：散热金属板，其散热金属板在其四个角部处形成作为整体结构的缓冲器，安装在散热金属板上的半导体芯片， 散热金属板并且围绕半导体芯片的周边，用于将引线连接到半导体芯片的接合线，以及用于密封半导体芯片的一部分的密封树脂构件，引线的内部引线，接合线和部分 散热金属板。 与散热金属板一体形成的保险杠的前端位于从密封树脂构件突出的外引线的顶部的外侧。 在QFP制造方法中，具有保险杠的散热金属板和具有引线的引线框固定在密封树脂部件的外部。