利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

65 条记录 (耗时 0.035 秒)

    Method and apparatus for controlling temperature of a substrate
    31.
    发明授权
    Method and apparatus for controlling temperature of a substrate 失效
    用于控制基板温度的方法和装置

    公开(公告)号：US07436645B2

    公开(公告)日：2008-10-14

    申请号：US11531474

    申请日：2006-09-13

    申请人： John Holland ,  Theodoros Panagopoulos ,  Alexander Matyushkin ,  Dan Katz ,  Michael F. Hegarty ,  Denis M. Koosau ,  Nicolas Gani

    发明人： John Holland ,  Theodoros Panagopoulos ,  Alexander Matyushkin ,  Dan Katz ,  Michael F. Hegarty ,  Denis M. Koosau ,  Nicolas Gani

    IPC分类号： H01T23/00

    CPC分类号： H01L21/67109 ,  H01L21/67103 ,  H01L21/6831

    摘要： A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes an electrostatic chuck coupled to a metallic base. The electrostatic chuck includes at least one chucking electrode and metallic base includes at least two fluidly isolated conduit loops disposed therein. In another embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.

    摘要翻译： 提供了一种用于在处理期间控制基板的温度的基座组件和方法。 在一个实施例中，基座组件包括联接到金属基座的静电卡盘。 静电吸盘包括至少一个夹紧电极和金属底座，其包括设置在其中的至少两个流体隔离的导管环。 在另一个实施例中，基座组件包括通过材料层联接到基座的支撑构件。 材料层具有至少两个具有不同导热系数的区域。 在另一个实施例中，支撑构件是静电卡盘。 在另外的实施例中，基座组件具有形成在基部和支撑构件之间的通道，用于在材料层附近提供冷却气体，以进一步控制支撑构件和基座之间的热传递，由此控制设置在基座上的基板的温度分布 支持会员

    SUBSTRATE PROCESSING WITH RAPID TEMPERATURE GRADIENT CONTROL
    32.
    发明申请
    SUBSTRATE PROCESSING WITH RAPID TEMPERATURE GRADIENT CONTROL 有权
    具有快速梯度控制的基板处理

    公开(公告)号：US20080017104A1

    公开(公告)日：2008-01-24

    申请号：US11778019

    申请日：2007-07-14

    申请人： Alexander Matyushkin ,  Dan Katz ,  John Holland ,  Theodoros Panagopoulos ,  Michael Willwerth

    发明人： Alexander Matyushkin ,  Dan Katz ,  John Holland ,  Theodoros Panagopoulos ,  Michael Willwerth

    IPC分类号： B05C11/00 ,  B05B5/025

    CPC分类号： H05B3/0047 ,  B05C13/00 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833

    摘要： A substrate processing chamber comprises an electrostatic chuck comprising a ceramic puck having a substrate receiving surface and an opposing backside surface. In one version, the ceramic puck comprises a thickness of less than 7 mm. An electrode is embedded in the ceramic puck to generate an electrostatic force to hold a substrate, and heater coils in the ceramic puck allow independent control of temperatures at different heating zones of the puck. A chiller provides coolant to coolant channels in a base below the ceramic puck. A controller comprises temperature control instruction sets which set the coolant temperature in the chiller in relation prior to ramping up or down of the power levels applied to the heater.

    摘要翻译： 基板处理室包括静电卡盘，该静电卡盘包括具有基板接收表面和相对的背面的陶瓷盘。 在一个版本中，陶瓷盘包括小于7mm的厚度。 电极嵌入陶瓷盘中以产生静电力来保持基板，并且陶瓷盘中的加热器线圈允许独立控制在不同加热区域的温度。 冷却器为陶瓷盘下方的底座中的冷却剂通道提供冷却剂。 控制器包括温度控制指令集，其将冷却器内的冷却剂温度设定为在施加到加热器的功率水平上升或下降之前。

    METHOD AND APPARATUS FOR CONTROLLING TEMPERATURE OF A SUBSTRATE
    33.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING TEMPERATURE OF A SUBSTRATE 失效
    控制基板温度的方法和装置

    公开(公告)号：US20070139856A1

    公开(公告)日：2007-06-21

    申请号：US11531474

    申请日：2006-09-13

    申请人： John Holland ,  Theodoros Panagopoulos ,  Alexander Matyushkin ,  Dan Katz ,  Michael Hegarty ,  Denis Koosau ,  Nicolas Gani

    发明人： John Holland ,  Theodoros Panagopoulos ,  Alexander Matyushkin ,  Dan Katz ,  Michael Hegarty ,  Denis Koosau ,  Nicolas Gani

    IPC分类号： H01T23/00

    CPC分类号： H01L21/67109 ,  H01L21/67103 ,  H01L21/6831

    摘要： A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes an electrostatic chuck coupled to a metallic base. The electrostatic chuck includes at least one chucking electrode and metallic base includes at least two fluidly isolated conduit loops disposed therein. In another embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.

    摘要翻译： 提供了一种用于在处理期间控制基板的温度的基座组件和方法。 在一个实施例中，基座组件包括联接到金属基座的静电卡盘。 静电吸盘包括至少一个夹紧电极和金属底座，其包括设置在其中的至少两个流体隔离的导管环。 在另一个实施例中，基座组件包括通过材料层联接到基座的支撑构件。 材料层具有至少两个具有不同导热系数的区域。 在另一个实施例中，支撑构件是静电卡盘。 在另外的实施例中，基座组件具有形成在基部和支撑构件之间的通道，用于在材料层附近提供冷却气体，以进一步控制支撑构件和基座之间的热传递，由此控制设置在基座上的基板的温度分布 支持会员