公开(公告)号：US20050206004A1

公开(公告)日：2005-09-22

申请号：US11128493

申请日：2005-05-13

申请人： Stephan Cohen ,  Stephen Gates ,  Jeffrey Hedrick ,  Elbert Huang ,  Dirk Pfeiffer

发明人： Stephan Cohen ,  Stephen Gates ,  Jeffrey Hedrick ,  Elbert Huang ,  Dirk Pfeiffer

IPC分类号： H01L20060101 ,  H01L21/00 ,  H01L21/312 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC分类号： H01L21/02282 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  H01L2924/00

摘要： The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween, where the ceramic diffusion barrier has a composition SivNwCxOyHz, where 0.1≦v≦0.9, 0≦w≦0.5, 0.01≦x≦0.9, 0≦y≦0.7, 0.01≦z≦0.8 for v+w+x+y+z=1. The ceramic diffusion barrier acts as a diffusion barrier to metals, i.e., copper. The present invention also comprises a method for forming the inventive ceramic diffusion barrier including the steps depositing a polymeric preceramic having a composition SivNwCxOyHz, where 0.1

公开(公告)号：US20050186778A1

公开(公告)日：2005-08-25

申请号：US11104764

申请日：2005-04-12

申请人： Donald Canaperi ,  Timothy Dalton ,  Stephen Gates ,  Mahadevaiyer Krishnan ,  Satya Nitta ,  Sampath Purushothaman ,  Sean Smith

发明人： Donald Canaperi ,  Timothy Dalton ,  Stephen Gates ,  Mahadevaiyer Krishnan ,  Satya Nitta ,  Sampath Purushothaman ,  Sean Smith

IPC分类号： H01L21/768 ,  H01L21/00 ,  H01L21/4763

CPC分类号： H01L21/76807 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76885 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure incorporates very low dielectric constant (k) insulators with copper wiring to achieve high performance interconnects. The wiring is supported by a relatively durable low k dielectric such as SiLk or SiO2 and a very low k and less-robust gap fill dielectric is disposed in the remainder of the structure, so that the structure combines a durable layer for strength with a very low k dielectric for interconnect electrical performance.

摘要翻译： 一个结构包含非常低的介电常数（k）绝缘体与铜布线，以实现高性能互连。 布线由相对耐用的低k电介质（例如SiLk或SiO 2）支撑，并且在该结构的其余部分中布置非常低的k和较不稳定的间隙填充电介质，使得该结构将耐用层与强度非常相似 低k电介质用于互连电气性能。

公开(公告)号：US20050008959A1

公开(公告)日：2005-01-13

申请号：US10915087

申请日：2004-08-10

申请人： Stephen Gates ,  Jeffrey Hedrick ,  Elbert Huang ,  Dirk Pfeiffer

发明人： Stephen Gates ,  Jeffrey Hedrick ,  Elbert Huang ,  Dirk Pfeiffer

IPC分类号： G03G13/06 ,  H01L20060101 ,  H01L21/00 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/44 ,  H01L23/48 ,  H05B6/64

CPC分类号： H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/316 ,  Y10S430/146 ,  Y10T428/31663

摘要： The present invention comprises a method for forming a hardmask including the steps of depositing a polymeric preceramic precursor film atop a substrate; converting the polymeric preceramic precursor film into at least one ceramic layer, where the ceramic layer has a composition of SivNwCxOyHz where 0.1≦v≦0.9, 0≦w≦0.5, 0.05≦x≦0.9, 0≦y≦0.5, 0.05≦z≦0.8 for v+w+x+y+z=1; forming a patterned photoresist atop the ceramic layer; patterning the ceramic layer to expose regions of the underlying substrate, where a remaining region of the underlying substrate is protected by the patterned ceramic layer; and etching the exposed region of the underlying substrate. Another aspect of the present invention is a buried etch stop layer having a composition of SivNwCxOyHz where 0.05

摘要翻译： 本发明包括一种用于形成硬掩模的方法，包括以下步骤：在基底顶上沉积聚合物预陶瓷前体膜; 将聚合物前陶瓷前体膜转化为至少一个陶瓷层，其中陶瓷层具有SivNwCxOyHh的组成，其中0.1≤v≤0.9,0≤w≤0.5,0.05≤x≤0.9,0≤ 对于v + w + x + y + z = 1，y <= 0.5,0.05 <= z <= 0.8; 在陶瓷层顶部形成图案化的光刻胶; 图案化陶瓷层以暴露下面的衬底的区域，其中下面的衬底的剩余区域被图案化的陶瓷层保护; 并蚀刻下面的衬底的暴露区域。 本发明的另一方面是具有SivNwCxOyHz组成的掩埋蚀刻停止层，其中0.05≤v≤0.8,0

公开(公告)号：US07607907B2

公开(公告)日：2009-10-27

申请号：US10940546

申请日：2004-09-14

申请人： Adrian Comillus Shorten ,  Christopher J. McCrindle ,  Brian Eric Knell ,  Stephen Gates

发明人： Adrian Comillus Shorten ,  Christopher J. McCrindle ,  Brian Eric Knell ,  Stephen Gates

IPC分类号： F04C2/344

CPC分类号： F01C21/0827 ,  F04C2/3445

摘要： A roller vane pump for fluid includes a carrier which is rotatable in a housing about an axis of rotation, the carrier carrying a plurality of roller vanes which are each received in a respective slot which extends inwardly of a periphery of the carrier and permits the roller to move inwardly and outwardly in use, the housing surrounding the carrier, pumping chambers being formed between the rollers, the carrier and the housing, the rollers engaging with the housing and moving inwardly and outwardly of their respective slots as the carrier rotates, in response to the configuration of the housing so that the pumping chambers change in volume as the carrier rotates, to effect pumping of the fluid, from an inlet to an outlet of the pump, and wherein in each of the slots in which the rollers are received, there is provided a restrictor element which restricts movement of the roller inwardly of its respective slot.

摘要翻译： 用于流体的滚子叶片泵包括可围绕旋转轴线在壳体中旋转的载体，所述载体承载多个辊叶片，每个叶片各自容纳在相对于所述载体周边的内侧延伸的槽中，并允许所述滚筒 在使用中向内和向外移动，围绕载体的壳体，在辊，载体和壳体之间形成的泵送室，当载体旋转时，滚子与壳体接合并向其内侧和外侧移动，作为响应 关于壳体的构造，使得当载体旋转时，泵送室的体积变化，以实现从泵的入口到出口的流体的泵送，并且其中在每个容纳辊的槽中， 提供了一种限制器，其限制了其相应槽的内部的运动。

公开(公告)号：US20060189133A1

公开(公告)日：2006-08-24

申请号：US11063152

申请日：2005-02-22

申请人： Christos Dimitrakopoulos ,  Stephen Gates ,  Vincent McGahay ,  Sanjay Mehta

发明人： Christos Dimitrakopoulos ,  Stephen Gates ,  Vincent McGahay ,  Sanjay Mehta

IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L23/48

CPC分类号： H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76885 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to methods of improving the fabrication of interconnect structures of the single or dual damascene type, in which there is no problem of hard mask retention or of conductivity between the metal lines after fabrication. The methods of the present invention include at least steps of chemical mechanical polishing and UV exposure or chemical repair treatment which steps improve the reliability of the interconnect structure formed. The present invention also relates to an interconnect structure which include a porous ultra low k dielectric of the SiCOH type in which the surface layer thereof has been modified so as to form a gradient layer that has both a density gradient and a C content gradient.

摘要翻译： 本发明涉及改进单镶嵌型或双镶嵌型互连结构的制造方法，其中在制造之后金属线之间没有硬掩模保持或导电性问题。 本发明的方法包括化学机械抛光和紫外线曝光或化学修复处理的至少步骤，这些步骤提高了形成的互连结构的可靠性。 本发明还涉及一种互连结构，其包括SiCOH型的多孔超低k电介质，其中其表面层被修饰以形成具有密度梯度和C含量梯度的梯度层。

公开(公告)号：US20060154086A1

公开(公告)日：2006-07-13

申请号：US11034480

申请日：2005-01-13

申请人： Nicholas Fuller ,  Stephen Gates ,  Timothy Dalton

发明人： Nicholas Fuller ,  Stephen Gates ,  Timothy Dalton

IPC分类号： B32B17/06 ,  B32B9/00 ,  H01L21/302

CPC分类号： H01L21/0331 ,  H01L21/76811 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/12576 ,  Y10T428/12611 ,  Y10T428/31667 ,  H01L2924/00

摘要： Interconnect structures possessing an organosilicate glass based material for 90 nm and beyond BEOL technologies in which a multilayer hardmask using a line-first approach are described. The interconnect structure of the invention achieves respective improved device/interconnect performance and affords a substantial dual damascene process window owing to the non-exposure of the OSG material to resist removal plasmas and because of the alternating inorganic/organic multilayer hardmask stack. The latter feature implies that for every inorganic layer that is being etched during a specific etch step, the corresponding pattern transfer layer in the field is organic and vice-versa.

摘要翻译： 具有用于90nm以上的有机硅酸盐玻璃基材料的互连结构，其中描述了使用线路优先方法的多层硬掩模的BEOL技术。 本发明的互连结构实现了相应的改进的器件/互连性能，并且由于不暴露OSG材料以抵抗去除等离子体以及由于交替的无机/有机多层硬掩模堆叠而提供了实质的双镶嵌工艺窗口。 后一特征意味着对于在特定蚀刻步骤期间被蚀刻的每个无机层，该领域中相应的图案转移层是有机的，反之亦然。

公开(公告)号：US20050216843A1

公开(公告)日：2005-09-29

申请号：US10410103

申请日：2003-04-09

申请人： Michael Masters ,  Alex Louie ,  Lily Tsong-Chou Knowles ,  Stephen Gates

发明人： Michael Masters ,  Alex Louie ,  Lily Tsong-Chou Knowles ,  Stephen Gates

IPC分类号： G08C17/00 ,  H04B1/20 ,  G06F3/00 ,  G08C19/12 ,  G09G5/00 ,  G11B27/00 ,  H04N5/44

CPC分类号： H04B1/202 ,  G08C17/00 ,  G08C2201/50 ,  G08C2201/92

摘要： A system and method for setting up a user interface of a remote control. The remote control displays a logical group of function keys the activation of which will cause the remote control to transmit a command to a target device and a plurality of indicators representative of devices. A user input functions to select one of the plurality of indicators and the device represented by the selected indicator is assigned as the target device for the logical group of function keys.

摘要翻译： 一种用于设置遥控器的用户界面的系统和方法。 遥控器显示逻辑组的功能键，其激活将使遥控器向目标设备发送命令，以及代表设备的多个指示器。 用户输入功能用于选择多个指示符之一，并且将由所选择的指示符表示的设备分配为用于逻辑组功能键的目标设备。

公开(公告)号：US20050116930A1

公开(公告)日：2005-06-02

申请号：US10702757

申请日：2003-11-06

申请人： Stephen Gates

发明人： Stephen Gates

IPC分类号： G08C20060101 ,  G08C17/02 ,  G08C23/04 ,  G09G5/00 ,  G09G5/08

CPC分类号： G08C17/02 ,  G08C23/04

摘要： An EL display is provided with EL segments which are individually illuminable and which include one or more complete function key images and/or fragments of complete function key images. One or more of the EL segments may thus be illuminated to present multiple, different user interfaces each having one or more complete function key images. A complete function key image presented as part of a user interface may be a complete key image that was included as part of an illuminated EL segment or may be formed by a combination of key image fragments included as part of multiple illuminated EL segments.

摘要翻译： EL显示器具有可分别照明并且包括一个或多个完整功能键图像和/或完整功能键图像的片段的EL段。 EL片段中的一个或多个可因此被照亮以呈现多个不同的用户界面，每个用户界面具有一个或多个完整的功能键图像。 作为用户界面的一部分呈现的完整的功能键图像可以是作为照亮的EL段的一部分被包括的完整的键图像，或者可以由作为多个照明的EL段的一部分包括的关键图像片段的组合形成。

公开(公告)号：US20070228570A1

公开(公告)日：2007-10-04

申请号：US11763135

申请日：2007-06-14

申请人： Christos Dimitrakopoulos ,  Stephen Gates ,  Vincent McGahay ,  Sanjay Mehta

发明人： Christos Dimitrakopoulos ,  Stephen Gates ,  Vincent McGahay ,  Sanjay Mehta

IPC分类号： H01L23/532

CPC分类号： H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76885 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to methods of improving the fabrication of interconnect structures of the single or dual damascene type, in which there is no problem of hard mask retention or of conductivity between the metal lines after fabrication. The methods of the present invention include at least steps of chemical mechanical polishing and UV exposure or chemical repair treatment which steps improve the reliability of the interconnect structure formed. The present invention also relates to an interconnect structure which include a porous ultra low k dielectric of the SiCOH type in which the surface layer thereof has been modified so as to form a gradient layer that has both a density gradient and a C content gradient.

摘要翻译： 本发明涉及改进单镶嵌型或双镶嵌型互连结构的制造方法，其中在制造之后金属线之间没有硬掩模保持或导电性问题。 本发明的方法包括化学机械抛光和紫外线曝光或化学修复处理的至少步骤，这些步骤提高了形成的互连结构的可靠性。 本发明还涉及一种互连结构，其包括SiCOH型的多孔超低k电介质，其中其表面层被修饰以形成具有密度梯度和C含量梯度的梯度层。

公开(公告)号：US20050152073A1

公开(公告)日：2005-07-14

申请号：US11030787

申请日：2005-01-07

申请人： Charles Black ,  Stephen Gates ,  Christopher Murray ,  Robert Sandstrom

发明人： Charles Black ,  Stephen Gates ,  Christopher Murray ,  Robert Sandstrom

IPC分类号： G01R33/09 ,  G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  G01R33/093 ,  Y10T29/49032 ,  Y10T29/49069 ,  Y10T29/49155 ,  Y10T428/25 ,  Y10T428/265

摘要： A magnetic-field sensor device comprises at least two electrodes; an insulating layer separating the at least two electrodes; at least one layer of chemically-synthesized magnetic nanoparticles disposed at or above a level with the insulating layer, and disposed between the at least two electrodes; and an organic spacer surrounding each of the chemically-synthesized magnetic nanoparticles. A deviation between diameters of different ones of the nanoparticles is less than 15%. Moreover, the chemically-synthesized magnetic nanoparticles range in size between 2 nm and 20 nm in diameter.

摘要翻译： 磁场传感器装置包括至少两个电极; 分离所述至少两个电极的绝缘层; 至少一层化学合成的磁性纳米颗粒设置在与绝缘层的水平面上或之上，并且设置在至少两个电极之间; 以及围绕每个化学合成的磁性纳米颗粒的有机间隔物。 不同纳米颗粒的直径之间的偏差小于15％。 此外，化学合成的磁性纳米粒子的尺寸范围在2nm和20nm之间。