公开(公告)号：US20190267493A1

公开(公告)日：2019-08-29

申请号：US16330990

申请日：2018-08-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guoying WANG ,  Zhen SONG ,  Hongda SUN

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423

Abstract: The present application provides a thin film transistor, a method of fabricating a thin film transistor and an array substrate. The thin film transistor includes: a gate electrode on a substrate and having first and second side surfaces facing each other; and an active layer between the first side surface and the second side surface of the gate electrode and having a third side surface and a fourth side surface. The third side surface of the active layer and the first side surface of the gate electrode face and are spaced apart from each other, the fourth side surface of the active layer and the second side surface of the gate electrode face and are spaced apart from each other, and at least one portion of the gate electrode is in the same range as at least one portion of the active layer in a height direction.

公开(公告)号：US20190245018A1

公开(公告)日：2019-08-08

申请号：US16335484

申请日：2018-04-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhen SONG ,  Hongda SUN ,  Guoying WANG

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L27/3246 ,  H01L27/3276 ,  H01L27/3279 ,  H01L51/5253 ,  H01L51/56

Abstract: The present disclosure relates to a display substrate, a manufacturing method thereof, and a display device. The display substrate comprises: a plurality of sub-pixels arranged in an array; a base substrate; and an interlayer insulating layer, at least one heightened part and a plurality of signal wires, sequentially disposed on the base substrate, wherein an orthographic projection of the heightened part on the base substrate is located between orthographic projections of two adjacent sub-pixels on the base substrate, and two adjacent signal wires between the two adjacent sub-pixels are located on two sides of the heightened part and at least partially cover two lateral sides of the heightened part respectively.

公开(公告)号：US20190181248A1

公开(公告)日：2019-06-13

申请号：US16325981

申请日：2018-04-26

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guoying WANG ,  Hongda SUN ,  Zhen SONG

IPC: H01L29/66 ,  H01L29/786

Abstract: A thin film transistor is provided and includes an active layer, a source electrode, a drain electrode, a gate electrode and a gate electrode insulating layer, the active layer includes a source electrode region, a drain electrode region and a channel region, the source electrode region and the drain electrode region include a first metal material, and the channel region includes a semiconductor material made from oxidation of the first metal material.

公开(公告)号：US20190131457A1

公开(公告)日：2019-05-02

申请号：US16037481

申请日：2018-07-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guoying WANG ,  Zhen SONG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/417

Abstract: The present disclosure relates to thin film transistor, fabricating method thereof, array substrate, and display device. A thin film transistor is provided that comprises: a substrate; an active layer, a first source electrode, and a first drain electrode disposed on a side of the substrate, the first source and drain electrodes being coupled to the active layer; and a first insulating layer and a gate disposed on a side of the active layer which is facing away from the substrate, the first insulating layer positioned between the active layer and the gate, wherein, the gate has a substantially same material as the first source and drain electrodes, and a main-body portion of the gate has a substantially same thickness as main-body portions of the first source and drain electrodes.

公开(公告)号：US20190067403A1

公开(公告)日：2019-02-28

申请号：US15969089

申请日：2018-05-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhen SONG ,  Guoying WANG

IPC: H01L27/32

Abstract: The present disclosure provides in some embodiments a back plate and a manufacturing method thereof. The back plate includes a base substrate and a driving TFT arranged on the base substrate. The driving transistor includes a light-shielding layer, a buffer layer and an active layer arranged sequentially on the base substrate. A gate insulation layer, a gate electrode, a source electrode, a drain electrode and an interlayer dielectric layer are arranged on the active layer. The buffer layer is provided with a first protrusion, and an orthogonal projection of the first protrusion onto the base substrate is located within an orthogonal projection of the gate electrode onto the base substrate.

公开(公告)号：US20230157133A1

公开(公告)日：2023-05-18

申请号：US17425563

申请日：2021-02-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Guoying WANG ,  Zhen SONG

IPC: H10K59/80 ,  H10K59/12 ,  H10K59/122

CPC classification number: H10K59/80522 ,  H10K59/1201 ,  H10K59/122

Abstract: The present disclosure provides an OLED display substrate, a manufacturing method thereof, and a display device. The manufacturing method includes: forming a driving circuitry layer and a first electrode of a light-emitting element on a base substrate; forming a protection layer covering the first electrode; forming a plurality of auxiliary electrode structures, at least one side surface of each auxiliary electrode structure being provided with a notch for exposing a conductive portion of the auxiliary electrode structure; removing at least a part of the protection layer covering the first electrode to expose the first electrode; forming a light-emitting layer of the light-emitting element, the light-emitting layer being interrupted at the notch to expose the side surface of the auxiliary electrode structure; and forming a second electrode of the light-emitting element, the second electrode being electrically coupled to the conductive portion at the side surface of the auxiliary electrode structure.

公开(公告)号：US20210359139A1

公开(公告)日：2021-11-18

申请号：US16334354

申请日：2018-11-01

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhen SONG ,  Guoying WANG

IPC: H01L29/786 ,  H01L27/12

Abstract: An array substrate includes a substrate, an active layer, and an amorphous silicon shielding layer. The substrate has a first surface and a second surface, which are opposing to each other. The active layer is over the first surface of the substrate. The amorphous silicon shielding layer includes amorphous silicon, and is between the active layer and the substrate, or alternatively is disposed over a side of the substrate proximal to the second surface of the substrate. An orthographic projection of the amorphous silicon shielding layer on the first surface at least partially and preferably completely covers an orthographic projection of the active layer on the first surface such that the amorphous silicon shielding layer shields a light from shedding onto the active layer.

公开(公告)号：US20210320277A1

公开(公告)日：2021-10-14

申请号：US17273772

申请日：2020-05-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guoying WANG ,  Zhen SONG

IPC: H01L51/52 ,  H01L51/56

Abstract: There are provided a display substrate, a display device, and a method of manufacturing the display substrate. The display substrate comprises a planarization layer; a pixel definition layer on the planarization layer, wherein the pixel definition layer comprises an opening and a rib surrounding the opening; a first electrode on the planarization layer and within the opening; a light-emitting portion located within the opening and electrically connected to the first electrode; an auxiliary electrode on the rib of the pixel definition layer; an insulating portion between the first electrode and the auxiliary electrode; and a second electrode covering the auxiliary electrode and the light-emitting portion.

公开(公告)号：US20210202600A1

公开(公告)日：2021-07-01

申请号：US16767377

申请日：2019-12-20

Applicant: BOE Technology Group Co., Ltd.

Inventor： Guoying WANG ,  Zhen SONG

IPC: H01L27/32

Abstract: The present disclosure provides an array substrate, a preparation method thereof and a related device. The array substrate includes a plurality of sub-pixel areas, each of the plurality of sub-pixel areas includes a pixel drive circuit and a photo compensation circuit arranged above a substrate, the pixel drive circuit includes a pixel storage capacitor coupled with a drive transistor, and the photo compensation circuit includes a photosensitive storage capacitor coupled with a photosensitive device; and the pixel storage capacitor and the photosensitive storage capacitor are arranged in a laminated manner, and the pixel storage capacitor and the photosensitive storage capacitor share a same electrode plate.

公开(公告)号：US20210036081A1

公开(公告)日：2021-02-04

申请号：US16964127

申请日：2019-12-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhen SONG ,  Guoying WANG

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56

Abstract: A transparent display substrate includes a first base and a plurality of sub-pixels disposed on the first base. At least one sub-pixel of the plurality of sub-pixels has a light-emitting region and a transparent region. In the at least one sub-pixel, each sub-pixel includes at least one thin-film transistor, a capacitor and a self-luminescent device that are located in the light-emitting region of the sub-pixel. The self-luminescent device is disposed on a side of the capacitor away from the at least one thin film transistor in a direction perpendicular to the first base. The at least one thin film transistor and the capacitor are electrically connected.