公开(公告)号：US06638152B1

公开(公告)日：2003-10-28

申请号：US09786304

申请日：2001-05-31

申请人： Soo Kwang Kim ,  So Young Yoon ,  Chang Hyun Lee

发明人： Soo Kwang Kim ,  So Young Yoon ,  Chang Hyun Lee

IPC分类号： B23F2103

CPC分类号： B28D1/121 ,  B23D61/021 ,  B28D1/041

摘要： A diamond tool having segment type cutting tip for cutting, grinding or drilling workpieces. The diamond tool comprising a plurality of segment type cutting tips circumferentially fixed on the wheel of the diamond tool, each of which has at least two diamond layers longitudinally disposed parallel with the rotation direction of the diamond tool, and capable of effectively cutting, grinding or drilling workpieces as forming at least two microscopic linear cutting groves in the workpieces when cutting operation.

摘要翻译： 一种金刚石工具，具有切割，磨削或钻孔工件的段式切削刀头。 所述金刚石工具包括多个沿圆周方向固定在金刚石工具的轮上的段式切割尖端，每个切割尖端具有与金刚石工具的旋转方向平行的纵向设置的至少两个金刚石层，并且能够有效地切割，研磨或 在切割操作时，在工件上钻出工件至少形成两个微观线性切割槽。

公开(公告)号：US06588310B2

公开(公告)日：2003-07-08

申请号：US09891052

申请日：2001-06-25

申请人： Chang Hyun Lee ,  Joon Ho Chang

发明人： Chang Hyun Lee ,  Joon Ho Chang

IPC分类号： B27B3314

CPC分类号： B23D61/026 ,  Y10T83/9319 ,  Y10T83/9377 ,  Y10T83/9403

摘要： The present invention relates to an improvement of the conventional sandwiched type saw blade shank by providing, as the intermediate layer, a coated thin sheet with tens of electro-conductive points or a thin sheet with multiple contacts to enhance weldability and to minimize the thermal deform or pressed marks, so that sound absorption, noise reduction and also heat dissipation may be maximized during a high speed cutting operation. The invention provides a saw blade shank with cutting tips on the circumference of the shank, comprising two or more conductive steel plates (22,24) and coated thin sheet (30) as an intermediate layer inserted between the neighboring conductive steel plates, the coated thin sheet being coated so as to leave a plurality of uncoated areas (32a) on at least one of its surfaces, whereby the coated thin sheets (30) and the steel plates (22,24) are integrally combined by multi-contact thermal fusion through a predetermined high pressure and electric current concentrated on the uncoated areas (32a).

摘要翻译： 本发明涉及通过提供具有数十个导电点的涂覆薄片或具有多个触点的薄片作为中间层来改进传统的夹式锯片柄，以增强可焊性并使热变形最小化 或按压标记，使得在高速切割操作期间可以使吸声，噪音降低和散热最大化。 本发明提供了一种在柄的圆周上具有切割尖端的锯片柄，包括两个或更多个导电钢板（22,24）和作为插入相邻导电钢板之间的中间层的涂覆薄片（30），涂层 薄片被涂覆以在其至少一个表面上留下多个未涂覆区域（32a），由此涂覆的薄片（30）和钢板（22,24）通过多接触热熔融 通过集中在未涂覆区域（32a）上的预定高压和电流。

公开(公告)号：US06564887B2

公开(公告)日：2003-05-20

申请号：US09887102

申请日：2001-06-25

申请人： Jae Hyun Hong ,  Chang Hyun Lee ,  See Hyung Kim

发明人： Jae Hyun Hong ,  Chang Hyun Lee ,  See Hyung Kim

IPC分类号： E21L1302

CPC分类号： B28D1/041 ,  Y10T408/81

摘要： The present invention relates to a core drill wherein initial drilling workability is improved through reduced frictional resistance on the segment tips, when they are seated on the surface of an article to start cutting operation, and wherein cutting scraps or sludge produced by the segment tips are smoothly discharged through the helical grooves formed on the core body so as to reduce the friction between the core body and the cutting scraps or sludge, whereby both the cooling and cutting performance of the core drill are improved. The invention proposes a core drill with a cylindrical core body with a predetermined diameter and length and with plural cutting segments provided on the lower part of a core body at a finite interval, wherein the cutting thickness surface of the cutting segment consists of inclined sharp thickness portion for decreased frictional resistance with an article to be processed.

摘要翻译： 芯钻技术领域本发明涉及一种芯钻，其特征在于，当初始钻孔加工性能降低时，通过降低分段末端的摩擦阻力，当它们被放置在制品的表面上以开始切割操作时，其中切割由分段末端产生的碎屑或污泥 通过形成在芯体上的螺旋槽顺利排出，以减少芯体与切屑或污泥之间的摩擦，从而提高了芯钻的冷却和切割性能。 本发明提出一种具有预定直径和长度的圆柱形芯体的芯钻，并且具有以有限间隔设置在芯体的下部上的多个切割段，其中切割段的切割厚度表面由倾斜的尖锐厚度 与待处理物品摩擦阻力降低的部分。

公开(公告)号：USD458619S1

公开(公告)日：2002-06-11

申请号：US29142170

申请日：2001-05-18

申请人： Chang Hyun Lee ,  Youn Chul Kim

设计人： Chang Hyun Lee ,  Youn Chul Kim

公开(公告)号：US09773796B2

公开(公告)日：2017-09-26

申请号：US14640784

申请日：2015-03-06

申请人： Chang Hyun Lee ,  Jin-Kyu Kim

发明人： Chang Hyun Lee ,  Jin-Kyu Kim

IPC分类号： H01L27/115 ,  H01L27/11556 ,  H01L27/11573 ,  H01L27/11524 ,  H01L27/11529 ,  H01L27/11541

CPC分类号： H01L27/11556 ,  H01L27/11524 ,  H01L27/11529 ,  H01L27/11541 ,  H01L27/11573

摘要： A non-volatile memory device including a cell array area including a plurality of memory cells and word lines and bit lines, which are connected to the plurality of memory cells, a core circuit area including a page buffer circuit and a row decoder circuit, the pager buffer circuit configured to temporarily store data input to and output from the plurality of memory cells, and the row decoder circuit configured to select some of the word lines corresponding to an address input thereto, and an input/output circuit area including a data input/output buffer circuit, the data input/output buffer circuit configured to at least one of transmit data to the page buffer circuit and receive data from the page buffer circuit, and the input/output circuit area including at least one asymmetrical transistor having a source region and a drain region asymmetrically disposed with respect to the gate structure may be provided.

公开(公告)号：US08729615B2

公开(公告)日：2014-05-20

申请号：US13248333

申请日：2011-09-29

申请人： Chang Hyun Lee ,  Young-Woo Park ,  Kye-Hyun Kyung ,  Cheon-An Lee ,  Sung-il Chang ,  Chul Bum Kim

发明人： Chang Hyun Lee ,  Young-Woo Park ,  Kye-Hyun Kyung ,  Cheon-An Lee ,  Sung-il Chang ,  Chul Bum Kim

IPC分类号： H01L27/108

CPC分类号： H01L21/823857 ,  G11C16/0483 ,  G11C16/30 ,  H01L27/105 ,  H01L27/11546 ,  H01L27/11556

摘要： A semiconductor memory device has a memory cell region and a peripheral region. The device includes low voltage transistors at the peripheral region having gate insulation films with different thicknesses. For example, a gate insulation film of a low voltage transistor used in an input/output circuit of the memory device may be thinner than the gate insulation film of a low voltage transistor used in a core circuit for the memory device. Since low voltage transistors used at an input/output circuit are formed to be different from low voltage transistors used at a core circuit or a high voltage pump circuit, high speed operation and low power consumption characteristics of a non-volatile memory device may be.

摘要翻译： 半导体存储器件具有存储单元区域和周边区域。 该器件包括具有不同厚度的栅极绝缘膜的外围区域的低电压晶体管。 例如，在存储器件的输入/输出电路中使用的低电压晶体管的栅极绝缘膜可以比用于存储器件的核心电路中的低电压晶体管的栅极绝缘膜更薄。 由于在输入/输出电路中使用的低压晶体管形成为与核心电路或高压泵浦电路所使用的低压晶体管不同，所以可以是非易失性存储器件的高速工作和低功耗特性。

公开(公告)号：US20120080869A1

公开(公告)日：2012-04-05

申请号：US12956223

申请日：2010-11-30

申请人： Chang Hyun Lee ,  Hyeong Ho Choi ,  Ki Dong Song

发明人： Chang Hyun Lee ,  Hyeong Ho Choi ,  Ki Dong Song

IPC分类号： B60R21/214 ,  B60R21/233 ,  B60R21/232

CPC分类号： B60R21/214 ,  B60R2021/23308

摘要： A roof airbag apparatus for a vehicle may include an inflator generating pressurized gas, an airbag cushion provided between a roof of a vehicle body and a head-lining to expand downwards towards a passenger who may be sitting on a seat when the pressurized gas may be supplied to the airbag cushion from the inflator, and a support panel provided on a lower portion of the airbag cushion to contact and screen the passenger's face when the airbag cushion expands.

摘要翻译： 用于车辆的屋顶安全气囊装置可以包括产生加压气体的充气机，设置在车体顶部和头衬之间的气囊，以便当加压气体可能位于座椅上时可能坐在座椅上的乘客向下扩张 从充气机供给到气囊垫，以及设置在气囊垫的下部的支撑板，用于当气囊缓冲垫膨胀时接触和屏蔽乘客的脸部。

公开(公告)号：US08127516B2

公开(公告)日：2012-03-06

申请号：US12654572

申请日：2009-12-23

申请人： Chang Hyun Lee ,  Jong Soo Woo ,  Hong Gi Yi ,  Kyeong Soo Kim ,  Ho Taek Yim

发明人： Chang Hyun Lee ,  Jong Soo Woo ,  Hong Gi Yi ,  Kyeong Soo Kim ,  Ho Taek Yim

IPC分类号： B65B63/08

CPC分类号： A61K9/0056 ,  A61J3/10 ,  A61K9/2095 ,  B30B11/02 ,  B30B11/08 ,  B65B9/042 ,  B65B9/045

摘要： A method and packaging machine for preparing rapidly disintegrating formulations for oral administration are disclosed. The present invention is characterized in that a powdery mixture including a pharmaceutically active ingredient and a sugar or a sugar alcohol powder is filled into a packaging material and, thereafter, the mixture, filled in the packaging material, is heated. The present invention can simply and economically prepare an oral formulation which undergoes rapid disintegration in the oral cavity and provides for high-quality administration to patients.

摘要翻译： 公开了用于制备用于口服给药的快速崩解制剂的方法和包装机。 本发明的特征在于将包含药物活性成分和糖或糖醇粉末的粉末混合物填充到包装材料中，然后将填充在包装材料中的混合物加热。 本发明可以简单且经济地制备在口腔中快速崩解并提供给患者高质量给药的口服制剂。

公开(公告)号：US20110110161A1

公开(公告)日：2011-05-12

申请号：US13008181

申请日：2011-01-18

申请人： Chang Hyun Lee

发明人： Chang Hyun Lee

IPC分类号： G11C16/10

CPC分类号： G11C16/3418 ,  G11C16/3427

摘要： A non-volatile memory device includes an array of flash memory cells therein and a voltage generator. The voltage generator is configured to generate a program voltage (Vpgm), a pass voltage (Vpass), a blocking voltage (Vblock) and a decoupling voltage (Vdcp) during a flash memory programming operation. The blocking voltage is generated at a level that inhibits inadvertent programming of an unselected memory cell(s). This voltage level of the blocking voltage is set so that Vdcp

摘要翻译： 非易失性存储器件包括其中的闪存单元阵列和电压发生器。 电压发生器被配置为在闪速存储器编程操作期间产生编程电压（Vpgm），通过电压（Vpass），阻断电压（Vblock）和去耦电压（Vdcp）。 阻塞电压产生在抑制非选择存储单元的无意编程的水平。 该阻塞电压的电压电平被设定为使得Vdcp

公开(公告)号：US20090129165A1

公开(公告)日：2009-05-21

申请号：US12191434

申请日：2008-08-14

申请人： Chang Hyun Lee ,  Jung-Dal Choi ,  Young-Ho Lim ,  Kang-Deog Suh

发明人： Chang Hyun Lee ,  Jung-Dal Choi ,  Young-Ho Lim ,  Kang-Deog Suh

IPC分类号： G11C16/04 ,  G11C16/06

CPC分类号： G11C16/0483 ,  G11C16/16

摘要： Methods of operating a charge trap nonvolatile memory device include operations to erase a first string of nonvolatile memory cells by selectively erasing a first plurality of nonvolatile memory cells in the first string and then selectively erasing a second plurality of nonvolatile memory cells in the first string, which may be interleaved with the first plurality of nonvolatile memory cells. This operation to selectively erase the first plurality of nonvolatile memory cells may include erasing the first plurality of nonvolatile memory cells while simultaneously biasing the second plurality of nonvolatile memory cells in a blocking condition that inhibits erasure of the second plurality of nonvolatile memory cells. The operation to selectively erase the second plurality of nonvolatile memory cells may include erasing the second plurality of nonvolatile memory cells while simultaneously biasing the first plurality of nonvolatile memory cells in a blocking condition that inhibits erasure of the first plurality of nonvolatile memory cells.

摘要翻译： 操作电荷阱非易失性存储装置的方法包括通过选择性地擦除第一串中的第一多个非易失性存储单元，然后选择性地擦除第一串中的第二多个非易失性存储单元来擦除第一串非易失性存储单元的操作， 其可以与第一多个非易失性存储器单元交错。 选择性地擦除第一多个非易失性存储单元的操作可以包括擦除第一多个非易失性存储单元，同时在禁止擦除第二多个非易失性存储单元的阻塞条件下同时偏置第二多个非易失性存储单元。 选择性地擦除第二多个非易失性存储单元的操作可以包括擦除第二多个非易失性存储单元，同时在禁止擦除第一多个非易失性存储单元的阻塞条件下同时偏置第一多个非易失性存储单元。