公开(公告)号：US20070010102A1

公开(公告)日：2007-01-11

申请号：US11380518

申请日：2006-04-27

Applicant: Ming-Hwei Hong ,  Jueinai Kwo ,  Chih-Ping Chen ,  Shiang-Pi Chang ,  Wei-Chin Lee

Inventor： Ming-Hwei Hong ,  Jueinai Kwo ,  Chih-Ping Chen ,  Shiang-Pi Chang ,  Wei-Chin Lee

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/02266 ,  H01L21/02192 ,  H01L21/02362 ,  H01L21/3147 ,  H01L21/31604

Abstract: A method for forming a semiconductor device includes placing a Si substrate and an Sc2O3 powder source in an oxide chamber, and vaporizing the Sc2O3 powder source in the oxide chamber so as to form a single crystal Sc2O3 film on the Si substrate through electron beam evaporation techniques.

Abstract translation: 一种用于形成半导体器件的方法包括将Si衬底和Sc 2 N 3 O 3 3粉末源放置在氧化物室中，并将Sc 2 N 2 > O 3粉末源，以便通过电子束蒸发在Si衬底上形成单晶Sc 2 O 3 O 3膜 技术