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    IMAGE SENSOR HAVING DARK SIDEWALLS BETWEEN COLOR FILTERS TO REDUCE OPTICAL CROSSTALK
    31.
    发明申请
    IMAGE SENSOR HAVING DARK SIDEWALLS BETWEEN COLOR FILTERS TO REDUCE OPTICAL CROSSTALK 审中-公开
    图像传感器在彩色滤光片之间具有减少光学波纹管的暗面

    公开(公告)号：US20120019695A1

    公开(公告)日：2012-01-26

    申请号：US12843578

    申请日：2010-07-26

    申请人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

    发明人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

    IPC分类号： H04N5/335

    CPC分类号： H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14685

    摘要： An apparatus and technique for fabricating an image sensor including the dark sidewall films disposed between adjacent color filters. The image sensor further includes an array of photosensitive elements disposed in a substrate layer, a color filter array (“CFA”) including CFA elements having at least two different colors disposed on a light incident side of the substrate layer, and an array of microlenses disposed over the CFA. Each microlens is aligned to direct light incident on the light incident side of the image sensor through a corresponding CFA element to a corresponding photosensitive element. The dark sidewall films are disposed on sides of the CFA elements and separate adjacent ones of the CFA elements having different colors.

    摘要翻译： 一种用于制造包括设置在相邻滤色器之间的暗侧壁膜的图像传感器的装置和技术。 图像传感器还包括设置在基底层中的感光元件的阵列，包括设置在基底层的光入射侧的具有至少两种不同颜色的CFA元件的滤色器阵列（“CFA”）和微透镜阵列 处理终审法院。 每个微透镜对准以将入射到图像传感器的光入射侧的光通过相应的CFA元件引导到相应的感光元件。 黑色侧壁膜设置在CFA元件的侧面上，并且分离具有不同颜色的相邻的CFA元件。

    Wafer dicing using scribe line etch
    32.
    发明授权
    Wafer dicing using scribe line etch 有权
    使用划线蚀刻的晶片切割

    公开(公告)号：US08071429B1

    公开(公告)日：2011-12-06

    申请号：US12954151

    申请日：2010-11-24

    申请人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Wei Zheng ,  Keh-Chiang Ku ,  Howard E. Rhodes

    发明人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Wei Zheng ,  Keh-Chiang Ku ,  Howard E. Rhodes

    IPC分类号： H01L21/304

    CPC分类号： H01L21/78 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14687

    摘要： Embodiments of a method for separating dies from a wafer having first and second sides. The process embodiment includes masking the first side of the wafer, the mask including openings therein to expose parts of the first side substantially aligned with scribe lines of the wafer. The process embodiment also includes etching from the exposed parts of the first side of the wafer until an intermediate position between the first and second sides and sawing the remainder of the wafer, starting from the intermediate position until reaching the second surface.

    摘要翻译： 用于从具有第一和第二侧的晶片分离模具的方法的实施例。 该工艺实施例包括掩蔽晶片的第一侧，掩模包括其中的开口，以暴露基本上与晶片划线对齐的第一侧的部分。 工艺实施例还包括从晶片的第一侧的暴露部分进行蚀刻，直到第一和第二面之间的中间位置，并从中间位置开始到达第二表面，锯切晶片的其余部分。

    HIGH FULL-WELL CAPACITY PIXEL WITH GRADED PHOTODETECTOR IMPLANT
    33.
    发明申请
    HIGH FULL-WELL CAPACITY PIXEL WITH GRADED PHOTODETECTOR IMPLANT 有权
    具有分级光电转换器的高全能容量像素

    公开(公告)号：US20110241090A1

    公开(公告)日：2011-10-06

    申请号：US12755088

    申请日：2010-04-06

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    IPC分类号： H01L31/112 ,  H01L21/66

    CPC分类号： H01L27/14689 ,  H01L21/26586 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/378

    摘要： Embodiments of a process for forming a photodetector region in a CMOS pixel by dopant implantation, the process comprising masking a photodetector area of a surface of a substrate for formation of the photodetector region, positioning the substrate at a plurality of twist angles, and at each of the plurality of twist angles, directing dopants at the photodetector area at a selected tilt angle. Embodiments of a CMOS pixel comprising a photodetector region formed in a substrate, the photodetector region comprising overlapping first and second dopant implants, wherein the overlap region has a different dopant concentration than the non-overlapping parts of the first and second implants, a floating diffusion formed in the substrate, and a transfer gate formed on the substrate between the photodetector and the transfer gate. Other embodiments are disclosed and claimed.

    摘要翻译： 用于通过掺杂剂注入在CMOS像素中形成光电检测器区域的方法的实施例，该方法包括掩蔽用于形成光电检测器区域的基板的表面的光电检测器区域，将基板定位在多个扭曲角度 在多个扭转角度中，以选定的倾斜角将光电探测器区域上的掺杂剂引导。 CMOS像素的实施例包括形成在衬底中的光电检测器区域，所述光电检测器区域包括重叠的第一和第二掺杂剂注入，其中所述重叠区域具有与所述第一和第二植入物的非重叠部分不同的掺杂剂浓度， 形成在基板上，以及形成在光电检测器和传输门之间的基板上的传输门。 公开和要求保护其他实施例。

    CMOS image sensor with high full-well-capacity
    34.
    发明授权
    CMOS image sensor with high full-well-capacity 有权
    具有高全容量容量的CMOS图像传感器

    公开(公告)号：US07888215B2

    公开(公告)日：2011-02-15

    申请号：US12133217

    申请日：2008-06-04

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    IPC分类号： H01L21/336

    CPC分类号： H01L31/03529 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14689 ,  Y02E10/50

    摘要： An image sensor with a high full-well capacity includes a photosensitive region, a transfer gate, and sidewall spacers. The photosensitive region is formed to accumulate an image charge in response to light. The transfer gate disposed adjacent to the photosensitive region and coupled to selectively transfer the image charge from the photosensitive region to other pixel circuitry. First and second sidewall spacers are disposed on either side of the transfer gate. The first sidewall spacer closest to the photosensitive region is narrower than the second sidewall spacer. In some cases, the first sidewall spacer may be omitted.

    摘要翻译： 具有高全阱容量的图像传感器包括光敏区域，转移栅极和侧壁间隔物。 光敏区域形成为响应于光积累图像电荷。 所述传输栅极邻近所述光敏区域设置并耦合以选择性地将所述图像电荷从所述感光区域传送到其它像素电路。 第一和第二侧壁间隔件设置在传送门的两侧。 最靠近感光区域的第一侧壁隔离物比第二侧壁间隔物窄。 在一些情况下，可以省略第一侧壁间隔物。

    PIXEL WITH NEGATIVELY-CHARGED SHALLOW TRENCH ISOLATION (STI) LINER
    37.
    发明申请
    PIXEL WITH NEGATIVELY-CHARGED SHALLOW TRENCH ISOLATION (STI) LINER 审中-公开
    PIXEL带负电荷的浅层隔离（STI）衬垫

    公开(公告)号：US20140048897A1

    公开(公告)日：2014-02-20

    申请号：US13587811

    申请日：2012-08-16

    申请人： Yin Qian ,  Hsin-Chih Tai ,  Gang Chen ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

    发明人： Yin Qian ,  Hsin-Chih Tai ,  Gang Chen ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

    IPC分类号： H01L31/02 ,  H01L31/18

    CPC分类号： H01L27/1463 ,  H01L27/14689

    摘要： Embodiments of a pixel including a substrate having a front surface and a photosensitive region formed in or near the front surface of the substrate. An isolation trench is formed in the front surface of the substrate adjacent to the photosensitive region. The isolation trench includes a trench having a bottom and sidewalls, a passivation layer formed on the bottom and the sidewalls, and a filler to fill the portion of the trench not filled by the passivation layer.

    摘要翻译： 包括具有形成在基板的表面中或附近的前表面和感光区域的基板的像素的实施例。 在与感光区域相邻的基板的前表面中形成隔离沟槽。 隔离沟槽包括具有底部和侧壁的沟槽，形成在底部和侧壁上的钝化层，以及用于填充未被钝化层填充的沟槽部分的填料。

    BACKSIDE ILLUMINATED IMAGING SENSOR WITH VERTICAL PIXEL SENSOR
    39.
    发明申请
    BACKSIDE ILLUMINATED IMAGING SENSOR WITH VERTICAL PIXEL SENSOR 有权
    背景照明成像传感器与垂直像素传感器

    公开(公告)号：US20120018620A1

    公开(公告)日：2012-01-26

    申请号：US13250237

    申请日：2011-09-30

    申请人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

    发明人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

    IPC分类号： H01L27/146 ,  H01L31/0232

    CPC分类号： H01L27/14647 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

    摘要： A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light.

    摘要翻译： 背面照明成像传感器包括垂直堆叠传感器，其通过使用不同的硅层在堆叠（或单独的堆叠）内的不同级别形成光电二极管来减少串扰，以检测不同的颜色。 形成蓝光，绿光和红光检测硅层，蓝光检测层位于最靠近传感器背面的位置，红光检测层位于离传感器背面最远的位置。 可以在红色和绿色光检测层之间插入抗反射涂层（ARC）层，以减少由红光检测层捕获的光学交叉对话。 可以使用非晶多晶硅来形成红光检测层，以提高检测红光的效率。

    Backside illuminated imaging sensor with silicide light reflecting layer
    40.
    发明授权
    Backside illuminated imaging sensor with silicide light reflecting layer 有权
    具有硅化物光反射层的背面照明成像传感器

    公开(公告)号：US07989859B2

    公开(公告)日：2011-08-02

    申请号：US12142678

    申请日：2008-06-19

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes

    IPC分类号： H01L31/062

    CPC分类号： H01L27/14625 ,  H01L27/1464 ,  H01L27/14643

    摘要： A backside illuminated imaging sensor includes a semiconductor layer, a metal interconnect layer and a silicide light reflecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel that includes a photodiode region is formed within the semiconductor layer. The metal interconnect layer is electrically coupled to the photodiode region and the silicide light reflecting layer is coupled between the metal interconnect layer and the front surface of the semiconductor layer. In operation, the photodiode region receives light from the back surface of the semiconductor layer, where a portion of the received light propagates through the photodiode region to the silicide light reflecting layer. The silicide light reflecting layer is configured to reflect the portion of light received from the photodiode region.

    摘要翻译： 背面照明成像传感器包括半导体层，金属互连层和硅化物光反射层。 半导体层具有前表面和后表面。 在半导体层内形成包括光电二极管区域的成像像素。 金属互连层电耦合到光电二极管区域，并且硅化物光反射层耦合在金属互连层和半导体层的前表面之间。 在操作中，光电二极管区域从半导体层的背面接收光，其中接收的光的一部分通过光电二极管区域传播到硅化物光反射层。 硅化物光反射层被配置为反射从光电二极管区域接收的光的部分。