公开(公告)号：US20120058574A1

公开(公告)日：2012-03-08

申请号：US13373127

申请日：2011-11-04

申请人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

发明人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

IPC分类号： H01L21/02

CPC分类号： H01L43/08

摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

公开(公告)号：US20100191896A1

公开(公告)日：2010-07-29

申请号：US12321663

申请日：2009-01-23

申请人： Hsu Kai Yang ,  Po-Kang Wang ,  Takuma Murai ,  Takehiro Kamigama

发明人： Hsu Kai Yang ,  Po-Kang Wang ,  Takuma Murai ,  Takehiro Kamigama

IPC分类号： G06F12/02 ,  G06F12/00 ,  G06F12/08

CPC分类号： G06F12/0246 ,  G06F12/0873 ,  G06F2212/214 ,  G06F2212/7201 ,  G06F2212/7203

摘要： Systems and methods for a SSD controller enabling data transfer between a host and flash memories have been achieved. A major component of the SSD controller is a non-volatile buffer memory, which interfaces fast disk drive protocols and slow write and read cycles of NAND flash. Preferably MRAM or Phase Change RAM can be used for the buffer memory. Non-volatile tables can also be implemented for storing dynamic logical to physical address translation, defective sector information and their spare sectors and/or SSD configuration parameters. data are kept in a buffer memory when the buffer memory is not powered

摘要翻译： SSD控制器的系统和方法实现了主机和闪速存储器之间的数据传输。 SSD控制器的一个主要组成部分是非易失性缓冲存储器，它接口快速磁盘驱动器协议和NAND闪存的缓慢写入和读取周期。 优选地，MRAM或相变RAM可用于缓冲存储器。 还可以实现非易失性表，用于存储动态逻辑到物理地址转换，缺陷扇区信息及其备用扇区和/或SSD配置参数。 当缓冲存储器未通电时，数据保存在缓冲存储器中

公开(公告)号：US20100176429A1

公开(公告)日：2010-07-15

申请号：US12661345

申请日：2010-03-16

申请人： Po-Kang Wang ,  Yimin Guo ,  Cheng T. Horng ,  Tai Min ,  Ru-Ying Tong

发明人： Po-Kang Wang ,  Yimin Guo ,  Cheng T. Horng ,  Tai Min ,  Ru-Ying Tong

IPC分类号： H01L29/94

CPC分类号： H01L43/08

摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

摘要翻译： 公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。 在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。 在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。 存储层可以具有SyAP配置和层压结构。

公开(公告)号：US07582942B2

公开(公告)日：2009-09-01

申请号：US12290410

申请日：2008-10-30

申请人： Yimin Guo ,  Po-Kang Wang

发明人： Yimin Guo ,  Po-Kang Wang

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  G11C11/15 ,  H01L27/222

摘要： The present invention provides an MRAM that includes a conductive line for generating a magnetic field. The latter is enhanced by the addition of a flux concentrator made from a single plane of soft ferromagnetic material, magnetically stabilized by means of an antiferromagnetic layer. This structure, in addition to being very easy to fabricate, facilitates close control over its magnetic properties, including uniformity and domain structure.

公开(公告)号：US20090201018A1

公开(公告)日：2009-08-13

申请号：US12321841

申请日：2009-01-26

申请人： Yimin Guo ,  Po-Kang Wang

发明人： Yimin Guo ,  Po-Kang Wang

IPC分类号： G01R33/02

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R15/205 ,  G01R33/098 ,  G11B5/3932 ,  H01F10/3254 ,  H01F10/3277 ,  H01F41/302

摘要： By subdividing the free layer of a GMR/TMR device into multiple sub-elements that share common top and bottom electrodes, a magnetic detector is produced that is domain stable in the presence of large stray fields, thereby eliminating the need for longitudinal bias magnets. Said detector may be used to measure electric currents without being affected by local temperature fluctuations and/or stray fields.

摘要翻译： 通过将GMR / TMR器件的自由层细分成共享共同的顶部和底部电极的多个子元件，产生在大的杂散场存在下稳定的磁性检测器，从而不需要纵向偏置磁体。 所述检测器可用于测量电流而不受局部温度波动和/或杂散场的影响。

公开(公告)号：US07483295B2

公开(公告)日：2009-01-27

申请号：US11788912

申请日：2007-04-23

申请人： Yimin Guo ,  Po-Kang Wang

发明人： Yimin Guo ,  Po-Kang Wang

IPC分类号： G11C11/00

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R15/205 ,  G01R33/098 ,  G11B5/3932 ,  H01F10/3254 ,  H01F10/3277 ,  H01F41/302

摘要： By subdividing the free layer of a GMR/TMR device into multiple sub-elements that share common top and bottom electrodes, a magnetic detector is produced that is domain stable in the presence of large stray fields, thereby eliminating the need for longitudinal bias magnets. Said detector may be used to measure electric currents without being affected by local temperature fluctuations and/or stray fields.

公开(公告)号：US07480172B2

公开(公告)日：2009-01-20

申请号：US11339189

申请日：2006-01-25

申请人： Xizeng Shi ,  Po-Kang Wang ,  Hsu Kai Yang

发明人： Xizeng Shi ,  Po-Kang Wang ,  Hsu Kai Yang

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： An MRAM array has a plurality of MRAM devices that are arranged in rows and columns with segmented word lines. A magnetic biasing field is coupled to each of the MRAM devices. The MRAM devices are programmed by providing a bidirectional bit line current to a selected bit line of the plurality of bit lines and a word line current pulse to one word line segment of one row of word line segments by discharging coupled word line segments. The field biasing device may be permanent magnetic layers or write biasing lines in proximity to the fixed magnetic layer of each of the MRAM and has a magnetic orientation equivalent to the magnetic orientation of a word line segment magnetic field generated by the word line current pulse.

摘要翻译： MRAM阵列具有多个以分段字线排列成行和列的MRAM器件。 磁偏置场耦合到每个MRAM器件。 MRAM器件通过向多个位线的选定位线提供双向位线电流，并通过对耦合的字线段进行放电而将字线电流脉冲提供给一行字线段的一个字线段。 励磁偏置装置可以是永久磁性层或者写入偏置线，靠近每个MRAM的固定磁性层，并且具有与由字线电流脉冲产生的字线段磁场的磁性取向相当的磁性取向。

公开(公告)号：US07445942B2

公开(公告)日：2008-11-04

申请号：US11182255

申请日：2005-07-15

申请人： Yimin Guo ,  Po-Kang Wang

发明人： Yimin Guo ,  Po-Kang Wang

IPC分类号： H01L21/00

CPC分类号： H01L27/222 ,  G11C11/1675 ,  G11C11/1695

摘要： A second shield layer, under the master shielding layer, is added to a segmented MRAM array. This additional shielding is patterned so as to provide one shield per bit slice. The placement of longitudinal biasing tabs at the ends of these segmented shields ensures that each segmented shield is a single magnetic domain, making it highly effective as a shield against very small stray fields.

摘要翻译： 在主屏蔽层下方的第二屏蔽层被添加到分段的MRAM阵列。 图案化附加屏蔽，以便每位片提供一个屏蔽。 在这些分段屏蔽的端部处放置纵向偏置突片确保每个分段屏蔽是单个磁畴，使其作为防止非常小的杂散场的屏蔽非常有效。

公开(公告)号：US20080258721A1

公开(公告)日：2008-10-23

申请号：US11788912

申请日：2007-04-23

申请人： Yimin Guo ,  Po-Kang Wang

发明人： Yimin Guo ,  Po-Kang Wang

IPC分类号： G01R33/02 ,  H01L21/00

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R15/205 ,  G01R33/098 ,  G11B5/3932 ,  H01F10/3254 ,  H01F10/3277 ,  H01F41/302

摘要： By subdividing the free layer of a GMR/TMR device into multiple sub-elements that share common top and bottom electrodes, a magnetic detector is produced that is domain stable in the presence of large stray fields, thereby eliminating the need for longitudinal bias magnets. Said detector may be used to measure electric currents without being affected by local temperature fluctuations and/or stray fields.

摘要翻译： 通过将GMR / TMR器件的自由层细分成共享共同的顶部和底部电极的多个子元件，产生在大的杂散场存在下稳定的磁性检测器，从而不需要纵向偏置磁体。 所述检测器可用于测量电流而不受局部温度波动和/或杂散场的影响。

公开(公告)号：US20070189064A1

公开(公告)日：2007-08-16

申请号：US11353326

申请日：2006-02-14

申请人： Tai Min ,  Po-Kang Wang

发明人： Tai Min ,  Po-Kang Wang

IPC分类号： H01L21/00 ,  G11C11/00 ,  H01L31/00 ,  H01L29/76 ,  H01L29/94 ,  G11C5/14

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/5607

摘要： A random access memory cell is described which is capable of storing multiple information states in a single physical bit. The basic structure combines a conventional MTJ with a reference stack that is magnetostatically coupled to the MTJ. The MTJ is read in the usual way but data is written and stored in the reference stack. Through use of two bit lines, the direction of magnetization of the free layer can be changed in small increments each unique direction representing a different information state.

摘要翻译： 描述了能够在单个物理位中存储多个信息状态的随机存取存储器单元。 基本结构将传统的MTJ与静磁耦合到MTJ的参考堆叠相结合。 MTJ以通常的方式读取，但是数据被写入并存储在参考堆栈中。 通过使用两个位线，自由层的磁化方向可以以小的增量改变每个独特的方向代表不同的信息状态。