公开(公告)号：US20070255665A1

公开(公告)日：2007-11-01

申请号：US11788319

申请日：2007-04-19

申请人： Akihiro Oosugi ,  Nobuhiro Sugita ,  Kiyoshi Oomura ,  Makoto Uchiyama ,  Yumiko Ookuma ,  Yasutsugu Sasaki ,  Takashi Iizuka

发明人： Akihiro Oosugi ,  Nobuhiro Sugita ,  Kiyoshi Oomura ,  Makoto Uchiyama ,  Yumiko Ookuma ,  Yasutsugu Sasaki ,  Takashi Iizuka

IPC分类号： G01G19/413 ,  G06K15/00 ,  G01G19/40

CPC分类号： G07G1/0054 ,  A47F9/047 ,  G01G19/4144

摘要： A process is executed in which a weight value transmitted from a scale device having a placing part for placing an article, is stored in a memory as a former weight under predetermined condition, when an article code is input through a user interface, a price and a weight range corresponding to the input article code is searched from an article data file, a weight check is executed in which whether or not a weight difference between a weight value acquired by placing the article code input article on the placing part and the former weight stored in the memory falls within the searched weight range, and an article information registration process is executed only when the weight check is gone through. As for the predetermined condition may include not only before the first input of the article code in one transaction and when it is determined that the weight value is within the weight range as a result of the weight check process, but also when it is determined that the weight value received from the scale device decreases compared to the former weight.

摘要翻译： 执行一个处理，其中当具有用于放置物品的放置部分的比例装置发送的重量值在预定条件下作为前一个重量存储在存储器中时，当通过用户界面输入物品代码时，价格和 从商品数据文件中搜索与输入商品代码相对应的重量范围，执行重量检查，其中通过将放置零件上的商品代码输入商品所获得的重量值与前一重量 存储在存储器中的重量范围在搜索的重量范围内，并且仅当重量检查通过时才执行文章信息登记处理。 至于预定条件不仅可以包括在一次交易中的第一次输入物品代码之前，并且当确定重量值作为重量检查处理的结果在重量范围内时，还可以包括当确定 从比例装置接收的重量值与前一个重量相比减小。

公开(公告)号：US5731229A

公开(公告)日：1998-03-24

申请号：US495273

申请日：1995-06-27

申请人： Makiko Kato ,  Yasukazu Iwasaki ,  Makoto Uchiyama

发明人： Makiko Kato ,  Yasukazu Iwasaki ,  Makoto Uchiyama

IPC分类号： B81B3/00 ,  B05D7/22

CPC分类号： B81C1/00896 ,  B81C2201/053 ,  B81C2201/056

摘要： A method of producing a device having a minute structure such as a semiconductor element. The producing method comprises the following steps: (a) forming a film of liquid containing a sublimable material on a surface of a product of the device, the sublimable material being solid ordinary temperature and at normal pressure, the minute structure being formed at the surface of the product; (b) improving a wettability of at least one of the minute structure and a region surrounding the minute structure by the liquid film of the sublimable material; (c) converting the liquid film into a state containing the sublimable material in solid phase so as to form a protective film; and (d) vaporizing the protective film to be removed.

摘要翻译： 一种具有半导体元件等微结构的元件的制造方法。 该制造方法包括以下步骤：（a）在装置的产品的表面上形成含有可升华材料的液体，升华材料为常温常压，微细结构形成在表面 的产品; （b）通过升华材料的液膜改善微小结构和微小结构周围区域中的至少一个的润湿性; （c）将液膜转化成固相含有可升华材料的状态，形成保护膜; 和（d）蒸发要除去的保护膜。

公开(公告)号：US5266152A

公开(公告)日：1993-11-30

申请号：US958771

申请日：1992-10-09

申请人： Yasukazu Iwasaki ,  Makoto Uchiyama

发明人： Yasukazu Iwasaki ,  Makoto Uchiyama

IPC分类号： C23F1/16 ,  H01L21/306 ,  B44C1/22

CPC分类号： H01L21/30604

摘要： Disclosed is a method of etching comprising preparing an etching solution containing hydrofluoric acid and nitric acid, and etching while adding nitrite ion or a medium for producing nitrite acid ion to the etching solution. As the medium for producing the nitrite ion, silicon with a high impurity concentration, a mixed acid solution containing hydrofluoric acid and nitric acid having been used for dissolving a great amount of silicon, or gaseous nitrogen dioxide may be used. Preferably, the concentration of nitrite ion in the etching solution is detected based on the concentration of NO.sub.x in the gas phase which is in an equilibrium relation to the nitrite ion in the liquid phase of the etching solution, and necessary nitrite ion are added to the etching solution based on the concentration of NO.sub.x.

摘要翻译： 公开了一种蚀刻方法，其包括制备含有氢氟酸和硝酸的蚀刻溶液，以及在向所述蚀刻溶液中加入亚硝酸根离子或用于产生亚硝酸根离子的介质时进行蚀刻。 作为用于生产亚硝酸根离子的介质，具有高杂质浓度的硅，含有氢氟酸和硝酸的混合酸溶液已被用于溶解大量硅或二氧化氮气体。 优选地，基于在蚀刻溶液的液相中与亚硝酸根离子平衡的气相中的NOx的浓度来检测蚀刻溶液中的亚硝酸根离子的浓度，并且将必要的亚硝酸根离子添加到 基于NOx浓度的蚀刻溶液。

公开(公告)号：US5173149A

公开(公告)日：1992-12-22

申请号：US665546

申请日：1991-03-07

申请人： Hidetoshi Nojiri ,  Makoto Uchiyama

发明人： Hidetoshi Nojiri ,  Makoto Uchiyama

IPC分类号： H01L21/306 ,  H01L21/3063

CPC分类号： H01L21/3063

摘要： To eliminate the influence of fluctuations in etching liquid sorts, composition, density, degradation, temperature, agitation etc., a method of selectively etching a semiconductor substrate having an n-type layer and a p-type layer and immersed in an electrolytic solution comprises the steps of: applying an etching voltage to the n-type layer; integrating etching current flowing through the substrate; if the integrated current value exceeds a reference value required to etch the p-type layer to a predetermined depth, increasing the etching voltage; if the potential of the substrate relative to a reference electrode reaches a predetermined value at which only the p-type layer can be etched, keeping the increased etching voltage at the current level to further etch only the p-type layer; and if the etching current drops sharply due to formation of an anodic oxidation film on the n-type layer, completing the substrate etching.

摘要翻译： 为了消除蚀刻液体种类，组成，密度，降解，温度，搅拌等的波动的影响，选择性地蚀刻具有n型层和p型层并浸没在电解液中的半导体衬底的方法包括 步骤：向n型层施加蚀刻电压; 积分流过衬底的蚀刻电流; 如果积分电流值超过将p型层蚀刻到预定深度所需的参考值，则增加蚀刻电压; 如果衬底相对于参考电极的电位达到只能蚀刻p型层的预定值，则将增加的蚀刻电压保持在当前电平以仅进一步蚀刻p型层; 并且如果蚀刻电流由于在n型层上形成阳极氧化膜而急剧下降，则完成基板蚀刻。

公开(公告)号：US4962062A

公开(公告)日：1990-10-09

申请号：US238421

申请日：1988-08-31

申请人： Makoto Uchiyama ,  Hidetoshi Nojiri

发明人： Makoto Uchiyama ,  Hidetoshi Nojiri

IPC分类号： H01L21/02 ,  H01L21/18

CPC分类号： H01L21/187 ,  Y10S148/012 ,  Y10S148/135

摘要： Two semiconductor substrates, each having a polished surface and at least one groove is formed in the surface of at least one of the two substrates, are tightly and inseparably joined by the steps of wetting the polished surface of at least one of the two substrates with a liquid not containing any solute that causes precipitation of a solid substance upon evaporation of the liquid, e.g. methanol or water, placing one substrate on the other so as to bring the polished surfaces of the two substrates into contact with each other with intervention of a thin film of the liquid therebetween and, after a while, subjecting the provisionally joined substrates to a heat treatment and then forming a dielectric layer of organic polymer or silicon compound in at least one groove. This method is suitable for joining silicon substrates such as silicon wafers now on the market. The two semiconductor substrates may be different in the type of conductivity or in the concentration of impurity, and at least one of the two substrates may have a diffused layer, a dielectric layer of a polycrystalline layer as a surface layer having the polished surface.

摘要翻译： 在两个基板中的至少一个基板的表面上形成两个具有抛光表面和至少一个凹槽的半导体基板，通过以下步骤紧密地和不可分离地连接，所述步骤是通过以下步骤将两个基板中的至少一个的抛光表面润湿， 不含任何溶质的液体，其在液体蒸发时引起固体物质的沉淀，例如， 甲醇或水，将一个基板放置在另一个上，以使两个基板的抛光表面彼此接触，同时介入其间的液体薄膜，并且在一段时间之后，使临时接合的基板经受热 处理，然后在至少一个凹槽中形成有机聚合物或硅化合物的介电层。 该方法适用于现在市场上连接诸如硅晶片的硅衬底。 两个半导体衬底的导电类型或杂质浓度可以不同，并且两个衬底中的至少一个可以具有扩散层，作为具有抛光表面的表面层的多晶层的电介质层。