STATEFUL NEGATIVE DIFFERENTIAL RESISTANCE DEVICES
    31.
    发明申请
    STATEFUL NEGATIVE DIFFERENTIAL RESISTANCE DEVICES 有权
    强大的负极差分电阻器件

    公开(公告)号:US20130176766A1

    公开(公告)日:2013-07-11

    申请号:US13346219

    申请日:2012-01-09

    IPC分类号: G11C11/00 H01L47/00

    摘要: A stateful negative differential resistance device includes a first conductive electrode and a second conductive electrode. The device also includes a first material with a reversible, nonvolatile resistance that changes based on applied electrical energy and a second material comprising a differential resistance that is negative in a locally active region. The first material and second material are sandwiched between the first conductive electrode and second conductive electrode. A method for using a stateful NDR device includes applying programming energy to the stateful NDR device to set a state of the stateful NDR device to a predetermined state and removing electrical power from the stateful NDR device. Power-up energy is applied to the stateful NDR device such that the stateful NDR device returns to the predetermined state.

    摘要翻译: 有状态的负差分电阻装置包括第一导电电极和第二导电电极。 该装置还包括具有基于所施加的电能而改变的可逆非易失性电阻的第一材料和包括在局​​部活性区域中为负的差分电阻的第二材料。 第一材料和第二材料夹在第一导电电极和第二导电电极之间。 使用有状态NDR设备的方法包括向有状态的NDR设备应用编程能量以将状态NDR设备的状态设置为预定状态,并从有状态的NDR设备移除电力。 上电能量被施加到状态NDR设备,使得状态NDR设备返回到预定状态。

    Display matrix with resistance switches
    32.
    发明授权
    Display matrix with resistance switches 有权
    显示矩阵与电阻开关

    公开(公告)号:US08928560B2

    公开(公告)日:2015-01-06

    申请号:US13424776

    申请日:2012-03-20

    IPC分类号: G09G3/20

    CPC分类号: G09G3/3648 G09G3/20

    摘要: A display matrix may have a resistance switch and a display element formed on a common display substrate. The resistance switch may have a metal insulator transition (MIT) material that has a negative differential resistance (NDR) characteristic that exhibits a discontinuous resistance.

    摘要翻译: 显示矩阵可以具有形成在公共显示基板上的电阻开关和显示元件。 电阻开关可以具有呈现不连续电阻的具有负差分电阻(NDR)特性的金属绝缘体转变(MIT)材料。

    MEMRISTOR WITH CONTROLLED ELECTRODE GRAIN SIZE
    33.
    发明申请
    MEMRISTOR WITH CONTROLLED ELECTRODE GRAIN SIZE 审中-公开
    具有控制电极粒度的电容器

    公开(公告)号:US20130026434A1

    公开(公告)日:2013-01-31

    申请号:US13383634

    申请日:2010-01-29

    IPC分类号: H01L45/00

    摘要: A memristor with a controlled electrode grain size includes an adhesion layer, a first electrode having a first surface contacting the adhesion layer and a second surface opposite the first surface, in which the first electrode is formed of an alloy of a base material and at least one second material, and in which the alloy has a relatively smaller grain size than a grain size of the base material. The memristor also includes a switching layer positioned adjacent to the second surface of the first electrode and a second electrode positioned adjacent to the switching layer.

    摘要翻译: 具有受控电极晶粒尺寸的忆阻器包括粘合层,具有接触粘附层的第一表面的第一电极和与第一表面相对的第二表面,其中第一电极由基材的合金和至少 一种第二材料,并且其中合金具有比基材的晶粒尺寸更小的晶粒尺寸。 忆阻器还包括邻近第一电极的第二表面定位的开关层和邻近开关层定位的第二电极。

    Three dimensional multilayer circuit
    35.
    发明授权
    Three dimensional multilayer circuit 有权
    三维多层电路

    公开(公告)号:US09324718B2

    公开(公告)日:2016-04-26

    申请号:US13260019

    申请日:2010-01-29

    摘要: A three dimensional multilayer circuit (600) includes a plurality of crossbar arrays (512) made up of intersecting crossbar segments (410, 420) and programmable crosspoint devices (514) interposed between the intersecting crossbar segments (410, 420). Shift pins (505, 510) are used to shift connection domains (430) of the intersecting crossbar segments (410, 420) between stacked crossbar arrays (512) such that the programmable crosspoint devices (514) are uniquely addressed. The shift pins (505, 510) make electrical connections between crossbar arrays (512) by passing vertically between crossbar segments (410, 510) in the first crossbar array (512) and crossbar segments in a second crossbar array. A method for transforming multilayer circuits is also described.

    摘要翻译: 三维多层电路(600)包括由相交的横杆段(410,420)和插入在相交的横杆段(410,420)之间的可编程交叉点装置(514)组成的多个横杆阵列(512)。 移位销(505,510)用于使堆叠的横杆阵列(512)之间的交叉横截面段(410,420)的连接区域(430)移位,使得可编程交叉点设备(514)被唯一地寻址。 换档销(505,510)通过在第一交叉杆阵列(512)中的横杆段(410,510)和第二横杆阵列中的横杆段之间垂直地穿过横杆阵列(512)之间进行电连接。 还描述了用于转换多层电路的方法。

    Electrically actuated switch
    37.
    发明授权
    Electrically actuated switch 有权
    电动开关

    公开(公告)号:US08766224B2

    公开(公告)日:2014-07-01

    申请号:US11542986

    申请日:2006-10-03

    IPC分类号: H01L45/00

    摘要: An electrically actuated switch comprises a first electrode, a second electrode, and an active region disposed therebetween. The active region comprises at least one primary active region comprising at least one material that can be doped or undoped to change its electrical conductivity, and a secondary active region comprising at least one material for providing a source/sink of ionic species that act as dopants for the primary active region(s). Methods of operating the switch are also provided.

    摘要翻译: 电驱动开关包括第一电极,第二电极和设置在它们之间的有源区域。 活性区域包括至少一个主要活性区域,其包含至少一种可被掺杂或未掺杂以改变其导电性的材料,以及包含至少一种材料的辅助活性区域,用于提供用作掺杂剂的离子物质的源/ 对于主要活动区域。 还提供了操作开关的方法。

    Memcapacitor
    38.
    发明授权
    Memcapacitor 有权
    电容器

    公开(公告)号:US08750024B2

    公开(公告)日:2014-06-10

    申请号:US13256245

    申请日:2009-06-18

    IPC分类号: G11C11/24

    摘要: A memcapacitor device (100) includes a first electrode (104) and a second electrode (106) and a memcapacitive matrix (102) interposed between the first electrode (104) and the second electrode (106). Mobile dopants (111) are contained within the memcapacitive matrix (102) and are repositioned within the memcapacitive matrix (102) by the application of a programming voltage (126) across the first electrode (104) and second electrode (106) to alter the capacitance of the memcapacitor (100). A method for utilizing a memcapacitive device (100) includes applying a programming voltage (126) across a memcapacitive matrix (102) such that mobile ions (111) contained within a memcapacitive matrix (102) are redistributed and alter a capacitance of the memcapacitive device (100), then removing the programming voltage (126) and applying a reading voltage to sense the capacitance of the memcapacitive device (100).

    摘要翻译: 电容器装置(100)包括插入在第一电极(104)和第二电极(106)之间的第一电极(104)和第二电极(106)和存储电容矩阵(102)。 移动掺杂剂(111)被包含在存储器电容矩阵(102)内,并且通过跨越第一电极(104)和第二电极(106)施加编程电压(126)而重新定位在存储电容矩阵(102)内,以改变 电容器(100)的电容。 一种利用存储电容器件(100)的方法包括跨越存储电容矩阵(102)施加编程电压(126),使得包含在存储电容矩阵(102)内的移动离子(111)被重新分配并改变存储器件的电容 (100),然后去除所述编程电压(126)并施加读取电压以感测所述存储器件(100)的电容。

    Image-rotation prisms and optical interconnects employing the same
    40.
    发明授权
    Image-rotation prisms and optical interconnects employing the same 有权
    图像旋转棱镜和使用其的光学互连

    公开(公告)号:US08660432B2

    公开(公告)日:2014-02-25

    申请号:US12922098

    申请日:2008-04-02

    IPC分类号: H04B10/00

    摘要: Embodiments of the present invention relate to a family of image-rotation prisms. Each image-rotation prism has the property that as an image-rotation prism is rotated, an image passing through the image-rotation prism rotates at twice the angular rate of the image-rotation prism. Embodiments of the present invention include optical systems that can be used for board-to-board communications and employ the image-rotation prisms to compensate for arbitrary axial rotations and misalignment of optical signals and can be used to direct optical signals output from transmitters on one board to particular detectors of a detector arrangement located on an adjacent board.

    摘要翻译: 本发明的实施例涉及一系列图像旋转棱镜。 每个图像旋转棱镜具有当图像旋转棱镜旋转时,通过图像旋转棱镜的图像以图像旋转棱镜的角速度的两倍旋转。 本发明的实施例包括可用于板对板通信并使用图像旋转棱镜补偿光信号的任意轴向旋转和未对准的光学系统,并且可以用于将发射机输出的光信号引导到一个 将其连接到位于相邻板上的检测器装置的特定检测器。