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公开(公告)号:US20130176766A1
公开(公告)日:2013-07-11
申请号:US13346219
申请日:2012-01-09
CPC分类号: G11C13/0069 , G11C11/39 , H01L45/04 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L47/00
摘要: A stateful negative differential resistance device includes a first conductive electrode and a second conductive electrode. The device also includes a first material with a reversible, nonvolatile resistance that changes based on applied electrical energy and a second material comprising a differential resistance that is negative in a locally active region. The first material and second material are sandwiched between the first conductive electrode and second conductive electrode. A method for using a stateful NDR device includes applying programming energy to the stateful NDR device to set a state of the stateful NDR device to a predetermined state and removing electrical power from the stateful NDR device. Power-up energy is applied to the stateful NDR device such that the stateful NDR device returns to the predetermined state.
摘要翻译: 有状态的负差分电阻装置包括第一导电电极和第二导电电极。 该装置还包括具有基于所施加的电能而改变的可逆非易失性电阻的第一材料和包括在局部活性区域中为负的差分电阻的第二材料。 第一材料和第二材料夹在第一导电电极和第二导电电极之间。 使用有状态NDR设备的方法包括向有状态的NDR设备应用编程能量以将状态NDR设备的状态设置为预定状态,并从有状态的NDR设备移除电力。 上电能量被施加到状态NDR设备,使得状态NDR设备返回到预定状态。
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公开(公告)号:US08928560B2
公开(公告)日:2015-01-06
申请号:US13424776
申请日:2012-03-20
IPC分类号: G09G3/20
CPC分类号: G09G3/3648 , G09G3/20
摘要: A display matrix may have a resistance switch and a display element formed on a common display substrate. The resistance switch may have a metal insulator transition (MIT) material that has a negative differential resistance (NDR) characteristic that exhibits a discontinuous resistance.
摘要翻译: 显示矩阵可以具有形成在公共显示基板上的电阻开关和显示元件。 电阻开关可以具有呈现不连续电阻的具有负差分电阻(NDR)特性的金属绝缘体转变(MIT)材料。
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公开(公告)号:US20130026434A1
公开(公告)日:2013-01-31
申请号:US13383634
申请日:2010-01-29
IPC分类号: H01L45/00
CPC分类号: H01L45/146 , H01L27/2472 , H01L45/04 , H01L45/1253
摘要: A memristor with a controlled electrode grain size includes an adhesion layer, a first electrode having a first surface contacting the adhesion layer and a second surface opposite the first surface, in which the first electrode is formed of an alloy of a base material and at least one second material, and in which the alloy has a relatively smaller grain size than a grain size of the base material. The memristor also includes a switching layer positioned adjacent to the second surface of the first electrode and a second electrode positioned adjacent to the switching layer.
摘要翻译: 具有受控电极晶粒尺寸的忆阻器包括粘合层,具有接触粘附层的第一表面的第一电极和与第一表面相对的第二表面,其中第一电极由基材的合金和至少 一种第二材料,并且其中合金具有比基材的晶粒尺寸更小的晶粒尺寸。 忆阻器还包括邻近第一电极的第二表面定位的开关层和邻近开关层定位的第二电极。
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公开(公告)号:US09664560B2
公开(公告)日:2017-05-30
申请号:US14381009
申请日:2012-03-06
申请人: R. Stanley Williams , Zhiyong Li
发明人: R. Stanley Williams , Zhiyong Li
CPC分类号: G01J3/0205 , G01J3/44 , G01J3/4412 , G01N21/658 , G01N2201/06113 , G01N2201/068
摘要: A double-grating surface-enhanced Raman spectrometer. The spectrometer includes a substrate; a plurality of nanofingers carried by the substrate, the nanofingers arranged to define a first optical grating; a light source oriented to project a beam of light toward the first optical grating; a second optical grating oriented to receive a beam of light scattered from the first optical grating; and a detector oriented to receive a beam of light scattered from the second optical grating.
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公开(公告)号:US09324718B2
公开(公告)日:2016-04-26
申请号:US13260019
申请日:2010-01-29
申请人: Wei Wu , R. Stanley Williams
发明人: Wei Wu , R. Stanley Williams
IPC分类号: H01L25/00 , H03K19/177 , H01L21/46 , H01L21/4763 , H01L27/10 , H01L27/02 , H01L27/06 , H01L27/24
CPC分类号: H01L27/101 , H01L27/0207 , H01L27/0688 , H01L27/24
摘要: A three dimensional multilayer circuit (600) includes a plurality of crossbar arrays (512) made up of intersecting crossbar segments (410, 420) and programmable crosspoint devices (514) interposed between the intersecting crossbar segments (410, 420). Shift pins (505, 510) are used to shift connection domains (430) of the intersecting crossbar segments (410, 420) between stacked crossbar arrays (512) such that the programmable crosspoint devices (514) are uniquely addressed. The shift pins (505, 510) make electrical connections between crossbar arrays (512) by passing vertically between crossbar segments (410, 510) in the first crossbar array (512) and crossbar segments in a second crossbar array. A method for transforming multilayer circuits is also described.
摘要翻译: 三维多层电路(600)包括由相交的横杆段(410,420)和插入在相交的横杆段(410,420)之间的可编程交叉点装置(514)组成的多个横杆阵列(512)。 移位销(505,510)用于使堆叠的横杆阵列(512)之间的交叉横截面段(410,420)的连接区域(430)移位,使得可编程交叉点设备(514)被唯一地寻址。 换档销(505,510)通过在第一交叉杆阵列(512)中的横杆段(410,510)和第二横杆阵列中的横杆段之间垂直地穿过横杆阵列(512)之间进行电连接。 还描述了用于转换多层电路的方法。
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公开(公告)号:US20150076438A1
公开(公告)日:2015-03-19
申请号:US14396406
申请日:2012-07-31
申请人: Hans S. Cho , Janice H. Nickel , R. Stanley Williams , Jaesung Roh , Jinwon Park , Choi Hyejung , Moonsig Joo , Jiwon Moon , Changgoo Lee , Yongsun Sohn , Jeongtae Kim
发明人: Hans S. Cho , Janice H. Nickel , R. Stanley Williams , Jaesung Roh , Jinwon Park , Choi Hyejung , Moonsig Joo , Jiwon Moon , Changgoo Lee , Yongsun Sohn , Jeongtae Kim
IPC分类号: H01L45/00
CPC分类号: H01L45/1233 , H01L27/101 , H01L27/2463 , H01L45/08 , H01L45/124 , H01L45/1253 , H01L45/146 , H01L45/1641 , H01L45/1675 , H01L45/1691
摘要: Examples of the present disclosure include non-volatile resistive memory cells and methods of forming the same. An example of a non-volatile resistive memory cell includes a first portion of the non-volatile resistive memory cell formed as a vertically-extending structure on a first electrode, where the first portion comprises at least one memristive material across a width of the vertically-extending structure. The non-volatile resistive memory cell also includes a second portion formed as a vertically-extending memristive material structure on at least one sidewall of the first portion.
摘要翻译: 本公开的实例包括非易失性电阻存储器单元及其形成方法。 非易失性电阻性存储单元的示例包括在第一电极上形成为垂直延伸结构的非易失性电阻性存储单元的第一部分,其中第一部分包括跨越垂直宽度的至少一个阻聚材料 延伸结构。 非易失性电阻性存储单元还包括在第一部分的至少一个侧壁上形成为垂直延伸的忆阻材料结构的第二部分。
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公开(公告)号:US08766224B2
公开(公告)日:2014-07-01
申请号:US11542986
申请日:2006-10-03
申请人: R. Stanley Williams
发明人: R. Stanley Williams
IPC分类号: H01L45/00
CPC分类号: H01L45/08 , G11C13/0007 , G11C13/0009 , G11C2213/52 , G11C2213/53 , G11C2213/56 , G11C2213/77 , H01L27/2463 , H01L45/1206 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147 , H03K17/00
摘要: An electrically actuated switch comprises a first electrode, a second electrode, and an active region disposed therebetween. The active region comprises at least one primary active region comprising at least one material that can be doped or undoped to change its electrical conductivity, and a secondary active region comprising at least one material for providing a source/sink of ionic species that act as dopants for the primary active region(s). Methods of operating the switch are also provided.
摘要翻译: 电驱动开关包括第一电极,第二电极和设置在它们之间的有源区域。 活性区域包括至少一个主要活性区域,其包含至少一种可被掺杂或未掺杂以改变其导电性的材料,以及包含至少一种材料的辅助活性区域,用于提供用作掺杂剂的离子物质的源/ 对于主要活动区域。 还提供了操作开关的方法。
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公开(公告)号:US08750024B2
公开(公告)日:2014-06-10
申请号:US13256245
申请日:2009-06-18
IPC分类号: G11C11/24
CPC分类号: G11C11/24 , G11C13/0002 , H01G4/1272 , H01G4/255 , H01G4/33 , H01L27/101 , H01L28/40
摘要: A memcapacitor device (100) includes a first electrode (104) and a second electrode (106) and a memcapacitive matrix (102) interposed between the first electrode (104) and the second electrode (106). Mobile dopants (111) are contained within the memcapacitive matrix (102) and are repositioned within the memcapacitive matrix (102) by the application of a programming voltage (126) across the first electrode (104) and second electrode (106) to alter the capacitance of the memcapacitor (100). A method for utilizing a memcapacitive device (100) includes applying a programming voltage (126) across a memcapacitive matrix (102) such that mobile ions (111) contained within a memcapacitive matrix (102) are redistributed and alter a capacitance of the memcapacitive device (100), then removing the programming voltage (126) and applying a reading voltage to sense the capacitance of the memcapacitive device (100).
摘要翻译: 电容器装置(100)包括插入在第一电极(104)和第二电极(106)之间的第一电极(104)和第二电极(106)和存储电容矩阵(102)。 移动掺杂剂(111)被包含在存储器电容矩阵(102)内,并且通过跨越第一电极(104)和第二电极(106)施加编程电压(126)而重新定位在存储电容矩阵(102)内,以改变 电容器(100)的电容。 一种利用存储电容器件(100)的方法包括跨越存储电容矩阵(102)施加编程电压(126),使得包含在存储电容矩阵(102)内的移动离子(111)被重新分配并改变存储器件的电容 (100),然后去除所述编程电压(126)并施加读取电压以感测所述存储器件(100)的电容。
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公开(公告)号:US08705265B2
公开(公告)日:2014-04-22
申请号:US13383614
申请日:2010-04-30
CPC分类号: G02F1/1525
摘要: A device contains a first layer, a second layer; and a membrane between the first and second layers. Mobile ions are in at least one of the first and second layers, and the membrane is permeable to the ions. Interfaces of the conductive membrane with the first layer and the second layer are such that charge of a polarity of the ions collects at the interfaces.
摘要翻译: 设备包含第一层,第二层; 以及第一和第二层之间的膜。 移动离子在第一和第二层中的至少一个中,并且膜对离子是可渗透的。 导电膜与第一层和第二层的接触使得离子的极性的电荷在界面处收集。
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公开(公告)号:US08660432B2
公开(公告)日:2014-02-25
申请号:US12922098
申请日:2008-04-02
申请人: Huei Pei Kuo , Robert G. Walmsley , Shih-Yuan Wang , Michael Renne Ty Tan , R. Stanley Williams
发明人: Huei Pei Kuo , Robert G. Walmsley , Shih-Yuan Wang , Michael Renne Ty Tan , R. Stanley Williams
IPC分类号: H04B10/00
CPC分类号: G02B5/04 , G02B27/642 , H01S5/005 , H01S5/02236 , H01S5/02292 , H01S5/183 , H01S5/50 , H04B10/803
摘要: Embodiments of the present invention relate to a family of image-rotation prisms. Each image-rotation prism has the property that as an image-rotation prism is rotated, an image passing through the image-rotation prism rotates at twice the angular rate of the image-rotation prism. Embodiments of the present invention include optical systems that can be used for board-to-board communications and employ the image-rotation prisms to compensate for arbitrary axial rotations and misalignment of optical signals and can be used to direct optical signals output from transmitters on one board to particular detectors of a detector arrangement located on an adjacent board.
摘要翻译: 本发明的实施例涉及一系列图像旋转棱镜。 每个图像旋转棱镜具有当图像旋转棱镜旋转时,通过图像旋转棱镜的图像以图像旋转棱镜的角速度的两倍旋转。 本发明的实施例包括可用于板对板通信并使用图像旋转棱镜补偿光信号的任意轴向旋转和未对准的光学系统,并且可以用于将发射机输出的光信号引导到一个 将其连接到位于相邻板上的检测器装置的特定检测器。
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