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31.发明申请PHOTORESIST COMPOSITIONS AND METHODS OF USE IN HIGH INDEX IMMERSION LITHOGRAPHY 审中-公开光电组合物及其在高折射刻蚀中的应用方法公开(公告)号：US20120288797A1
公开(公告)日：2012-11-15
申请号：US13543852
申请日：2012-07-08
申请人： Hiroshi Ito , Daniel Paul Sanders , Linda Sundberg
发明人： Hiroshi Ito , Daniel Paul Sanders , Linda Sundberg
CPC分类号： G03F7/2041 , G03F7/0045 , G03F7/0046 , G03F7/039 , G03F7/0392 , G03F7/0395 , G03F7/0397
摘要： The present invention relates to a composition comprising a photoresist polymer and a fluoropolymer. In one embodiment, the fluoropolymer comprises a first monomer having a pendant group selected from alicyclic bis-hexafluoroisopropanol and aryl bis-hexafluoroisopropanol and preferably a second monomer selected from fluorinated styrene and fluorinated vinyl ether. The invention composition has improved receding contact angles with high refractive index hydrocarbon fluids used in immersion lithography and, thereby, provides improved performance in immersion lithography.
摘要翻译： 本发明涉及包含光致抗蚀剂聚合物和含氟聚合物的组合物。 在一个实施方案中，含氟聚合物包含具有选自脂环族双六氟异丙醇和芳基双 - 六氟异丙醇的侧基的第一单体，优选选自氟化苯乙烯和氟化乙烯基醚的第二单体。 本发明组合物具有改进的与浸渍光刻中使用的高折射率烃流体的后退接触角，从而提供浸没式光刻中的改进的性能。
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公开(公告)号：US20110207052A1
公开(公告)日：2011-08-25
申请号：US12709346
申请日：2010-02-19
CPC分类号： G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/322 , G03F7/325
摘要： Provided are sulfonamide-containing photoresist compositions for use in lithographic processes that have improved properties for high resolution, low blur imaging. Also provided are alcohol-soluble photoresists for resist-on-resist applications. The sulfonamide-containing photoresist compositions of the present invention include positive-tone photoresist compositions that have sulfonamide-substituted repeat units with branched linking group as shown in Formula (I):
摘要翻译： 提供了用于光刻工艺的含磺酰胺的光致抗蚀剂组合物，其具有用于高分辨率，低模糊成像的改进的性质。 还提供了用于抗蚀剂抗蚀剂应用的醇溶性光致抗蚀剂。 本发明的含磺酰胺的光致抗蚀剂组合物包括具有如式（I）所示的具有支链连接基团的磺酰胺取代的重复单元的正色调光致抗蚀剂组合物：
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