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36 条记录 (耗时 0.033 秒)

    Silica particles surface-treated with silane, process for producing the same and uses thereof
    31.
    发明授权
    Silica particles surface-treated with silane, process for producing the same and uses thereof 有权
    用硅烷表面处理的二氧化硅颗粒，其制造方法及其用途

    公开(公告)号：US06855759B2

    公开(公告)日：2005-02-15

    申请号：US10284149

    申请日：2002-10-31

    申请人： Muneo Kudo ,  Shoji Ichinohe ,  Atsushi Asami ,  Mitsuo Asai ,  Kazuyuki Matsumura ,  Masaki Tanaka

    发明人： Muneo Kudo ,  Shoji Ichinohe ,  Atsushi Asami ,  Mitsuo Asai ,  Kazuyuki Matsumura ,  Masaki Tanaka

    IPC分类号： C08K9/06 ,  C08K5/24

    CPC分类号： C08K9/06

    摘要： Fine silica particles surface-treated with a silane and having primary particles having a particle diameter of from 0.01 to 5 μm, which fine silica particles fulfill the following conditions (i) and (ii), a process for their production and an organic resin composition containing such particles as a component are provided. (i) When an organic compound which is liquid at room temperature and has a dielectric constant of from 1 to 40 F/m and fine silica particles are mixed in a weight ratio of 5:1 and shaked, the fine silica particles disperse uniformly in the organic compound, and (ii) the quantity of primary particles remaining as primary particles when methanol is evaporated under heating by means of an evaporator from a dispersion prepared by dispersing the fine silica particles in methanol and thereafter the particles are held at a temperature of 100° C. for 2 hours, is in a percentage of at least 20% based on the quantity of primary particles originally present. The present fine silica particles are highly dispersible and low aggregative, and the organic resin composition containing them is useful for obtaining films having a good transparency and superior blocking resistance, slip properties and scratch resistance.

    摘要翻译： 二氧化硅微粒用硅烷表面处理，具有粒径为0.01〜5μm的一次粒子，二氧化硅微粒满足下述条件（i）和（ii），其制造方法和有机树脂组合物 提供含有作为组分的颗粒。 （i）当室温下介电常数为1〜40F / m的有机化合物和二氧化硅微粒以5:1的重量比混合并摇动时，二氧化硅微粒分散在 有机化合物，和（ii）当通过蒸发器从通过将二氧化硅微粒分散在甲醇中制备的分散体在蒸发器中加热蒸发甲醇时剩余的一次颗粒的量，然后将颗粒保持在 100℃，2小时，以原始存在的一次粒子的量为至少20％的百分比。 本发明的二氧化硅微粒高分散性和低聚集性，含有它们的有机树脂组合物可用于获得具有良好透明性和优异的抗粘连性，滑爽性和耐划伤性的膜。

    Process for producing organosilicon resin, and process for producing polyurethane foam by using the organosilicon resin obtained by that process
    33.
    发明授权
    Process for producing organosilicon resin, and process for producing polyurethane foam by using the organosilicon resin obtained by that process 失效
    制造有机硅树脂的方法，以及使用通过该方法得到的有机硅树脂制造聚氨酯泡沫的方法

    公开(公告)号：US6124369A

    公开(公告)日：2000-09-26

    申请号：US397635

    申请日：1999-09-16

    申请人： Muneo Kudo ,  Shinichi Morioka ,  Mitsuo Asai

    发明人： Muneo Kudo ,  Shinichi Morioka ,  Mitsuo Asai

    IPC分类号： C08G18/00 ,  C08G77/06 ,  C08G77/08 ,  C08G101/00 ,  C08G18/61

    CPC分类号： C08G77/10 ,  C08G77/06

    摘要： A process for producing an organosilicon resin is disclosed. The process includes the steps of equilibrating a mixture of silane compounds of Si(OR.sup.3).sub.4 wherein R.sup.3 's are a monovalent hydrocarbon group having 1 to 6 carbon atoms; R.sup.2 Si(OR.sup.4).sub.3 wherein R.sup.2 is a monovalent hydrocarbon group having 1 to 20 carbon atoms, and R.sup.4 's are a monovalent hydrocarbon group having 1 to 6 carbon atoms; and R.sup.1.sub.3 SiX wherein X is an --OH group, an --OSiR.sup.1.sub.3 group or a hydrolyzable group, and R.sup.1 's are a monovalent hydrocarbon group having 1 to 6 carbon atoms; adding water to the product of the equilibration reaction to carry out hydrolysis reaction; and adding an aqueous alkali to the product of the hydrolysis reaction to carry out condensation reaction. The organosilicon resin obtained is well dispersible in a resin premix containing a polyol, a blowing agent, a catalyst and a foam stabilizer, and also is highly hydrophobic and low reactive. Hence, the resin premix containing the organosilicon resin has good storage stability. Accordingly, this resin premix need not be agitated when used and also can provide polyurethane foams having superior properties such as dimensional stability.

    摘要翻译： 公开了一种制备有机硅树脂的方法。 该方法包括使Si（OR 3）4的硅烷化合物的混合物平衡的步骤，其中R 3是具有1至6个碳原子的一价烃基; R2Si（OR4）3，其中R2是具有1至20个碳原子的一价烃基，R4是具有1至6个碳原子的一价烃基; 和R 13 SiX，其中X为-OH基，-OSiR13基或可水解基，R 1为具有1至6个碳原子的一价烃基; 向平衡反应产物中加入水进行水解反应; 并向水解反应产物中加入碱水溶液进行缩合反应。 获得的有机硅氧烷树脂可以良好地分散在含有多元醇，发泡剂，催化剂和泡沫稳定剂的树脂预混物中，并且还具有高疏水性和低反应性。 因此，含有有机硅树脂的树脂预混物具有良好的储存稳定性。 因此，该树脂预混物在使用时不需要搅拌，也可以提供具有优异性能如尺寸稳定性的聚氨酯泡沫。

    Semiconductor logic circuit with noise suppression circuit
    36.
    发明授权
    Semiconductor logic circuit with noise suppression circuit 失效
    具有噪声抑制电路的半导体逻辑电路

    公开(公告)号：US5065048A

    公开(公告)日：1991-11-12

    申请号：US397199

    申请日：1989-08-23

    申请人： Mitsuo Asai ,  Takehisa Hayashi ,  Toshio Doi ,  Kenichi Ishibashi

    发明人： Mitsuo Asai ,  Takehisa Hayashi ,  Toshio Doi ,  Kenichi Ishibashi

    IPC分类号： H03K19/003 ,  H03K19/096

    CPC分类号： H03K19/0963 ,  H03K19/00338

    摘要： A dynamic semiconductor logic circuit comprising a MOS FET logic section for effecting a high-speed logic operation in response to input logic signals after precharging of an output mode and internal nodes the logic section, a CMOS/BiCMOS output buffer section for outputting a result of the logic operation, and a noise suppression section for preventing erroneous operations without sacrificing the high-speed operation characteristic. The circuit, which is fabricated with 0.5-.mu.m-rule technology and operates at high speed with a low-voltage power source of 4.5 V or less, has a precharging section for precharging the output node and internal nodes of the MOS FET logic section and a noise suppression section for latching the output node of the logic section to the source potential by feeding back the output of an output buffer section in order to enlarge the soft error margin. The latching current is held at less than a predetermined ratio to maintain the high-speed operation characteristic.

    摘要翻译： 一种动态半导体逻辑电路，包括：MOS FET逻辑部分，用于响应输入模式预充电之后的输入逻辑信号和所述逻辑部分的内部节点进行高速逻辑运算; CMOS / BiCMOS输出缓冲器部分，用于输出 逻辑运算，以及噪声抑制部，用于防止误操作而不牺牲高速运行特性。 该电路采用0.5μm规则技术制造，并且在4.5 V或更低的低压电源下以高速运行，具有预充电部分，用于对MOS FET逻辑部分的输出节点和内部节点进行预充电 以及噪声抑制部分，用于通过反馈输出缓冲器部分的输出来将逻辑部分的输出节点锁存到源极电位，以便放大软误差容限。 闭锁电流保持在小于预定比率以保持高速操作特性。