利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

175 条记录 (耗时 0.042 秒)

    Plasma immersion ion implantation apparatus
    31.
    发明申请
    Plasma immersion ion implantation apparatus 审中-公开
    等离子体浸没离子注入装置

    公开(公告)号：US20050230047A1

    公开(公告)日：2005-10-20

    申请号：US11046659

    申请日：2005-01-28

    申请人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

    发明人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

    IPC分类号： H01J37/32 ,  C23F1/00 ,  H01L21/302

    CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01L21/67109 ,  H01L21/6831

    摘要： A plasma reactor for performing plasma immersion ion implantation, dopant deposition or surface material enhancement, includes a vacuum chamber, a wafer support pedestal or electrostatic chuck having an insulated electrode underlying a wafer support surface within said chamber, a chucking voltage source coupled to the insulated electrode, a thermal sink coupled to the electrostatic chuck, an RF bias power generator coupled to said electrostatic chuck, and a process gas supply and gas inlet ports coupled to the chamber and coupled to the gas supply. The process gas supply contains either (a) a gas containing a dopant species to be ion implanted in a semiconductive material of workpiece, (b) a gas containing a dopant species to be deposited on a surface of a semiconductive material of a workpiece, or (c) a gas containing a material enhancement species to be ion implanted into a workpiece.

    摘要翻译： 用于执行等离子体浸没离子注入，掺杂剂沉积或表面材料增强的等离子体反应器包括真空室，晶片支撑基座或静电卡盘，其具有位于所述腔室内的晶片支撑表面下方的绝缘电极，耦合到绝缘体的夹持电压源 电极，耦合到静电卡盘的散热器，耦合到所述静电卡盘的RF偏置功率发生器，以及耦合到所述腔室并耦合到气体供应的工艺气体供应和气体入口端口。 工艺气体供应包含（a）含有要离子注入工件半导体材料中的掺杂剂物质的气体，（b）含有待沉积在工件的半导体材料表面上的掺杂物质的气体，或 （c）含有将离子注入到工件中的材料增强物质的气体。

    Plasma immersion ion implantation process
    32.
    发明申请
    Plasma immersion ion implantation process 有权
    等离子体浸没离子注入工艺

    公开(公告)号：US20050191830A1

    公开(公告)日：2005-09-01

    申请号：US11046661

    申请日：2005-01-28

    申请人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

    发明人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

    IPC分类号： H01J37/32 ,  H01L21/425

    CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01L21/67109 ,  H01L21/6831

    摘要： A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, includes placing the workpiece on a workpiece support in the chamber, controlling a temperature of the wafer support near a constant level; performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma while minimizing deposition and minimizing etching by holding the temperature of the workpiece within a temperature range that is above a workpiece deposition threshold temperature and below a workpiece etch threshold temperature.

    摘要翻译： 在等离子体反应器室中对工件进行等离子体浸没离子注入的方法包括将工件放置在腔室中的工件支撑件上，将晶片支架的温度控制在恒定水平附近; 通过将注入种类前体气体引入到腔室中并产生等离子体并且通过将工件的温度保持在高于工件沉积阈值温度并低于工件沉积阈值温度的温度范围内来最小化沉积和最小化蚀刻来对工件进行等离子体浸没离子注入 工件蚀刻阈值温度。

    Plasma immersion ion implantation process
    33.
    发明申请
    Plasma immersion ion implantation process 有权
    等离子体浸没离子注入工艺

    公开(公告)号：US20050191827A1

    公开(公告)日：2005-09-01

    申请号：US11046562

    申请日：2005-01-28

    申请人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

    发明人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

    IPC分类号： H01J37/32 ,  H01L21/461 ,  H01L21/302

    CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01L21/67109 ,  H01L21/6831

    摘要： One method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber includes initially depositing a seasoning film on the interior surfaces of the plasma reactor chamber before the workpiece is introduced, by introducing a seasoning film precursor gas into the chamber and generating a plasma within the chamber, performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma, and then removing the workpiece from the chamber and removing the seasoning film from the chamber interior surfaces.

    摘要翻译： 在等离子体反应器室中的工件上进行等离子体浸没离子注入的一种方法包括：在工件被引入之前，首先在等离子体反应器室的内表面上沉积调味膜，通过将调味膜前体气体引入室中， 在室内的等离子体，通过将注入种类前体气体引入到腔室中并产生等离子体，然后从腔室中移出工件并从室内表面除去调味膜，从而在工件上进行等离子体浸没离子注入。

    Electrostatic chuck with smart lift-pin mechanism for a plasma reactor
    37.
    发明申请
    Electrostatic chuck with smart lift-pin mechanism for a plasma reactor 有权
    用于等离子体反应器的具有智能举升机构的静电卡盘

    公开(公告)号：US20060238953A1

    公开(公告)日：2006-10-26

    申请号：US11115951

    申请日：2005-04-26

    申请人： Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth Collins ,  Kartik Ramaswamy ,  Biagio Gallo ,  Amir Al-Bayati

    发明人： Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth Collins ,  Kartik Ramaswamy ,  Biagio Gallo ,  Amir Al-Bayati

    IPC分类号： H01T23/00

    CPC分类号： H01L21/68742 ,  H01L21/6831

    摘要： A lift pin assembly for use in a reactor for processing a workpiece includes plural lift pins extending generally parallel with a lift direction, each of the plural lift pins having a top end for supporting a workpiece and a bottom end. A lift table faces the bottom ends of the pins and is translatable in a direction generally parallel with the lift direction. A small force detector senses a force exerted by the lift pins that is sufficiently large to indicate a chucked wafer and sufficiently small to avoid dechucking a wafer A large force detector senses a force exerted by the lift pins in a range sufficient to de-chuck the wafer.

    摘要翻译： 用于处理工件的反应器中的提升销组件包括大体平行于提升方向延伸的多个提升销，多个提升销中的每一个具有用于支撑工件的顶端和底端。 升降台面向销的底端，并可在与升降方向大致平行的方向上平移。 小力检测器感测由提升销施加的力足够大以指示夹紧晶片并且足够小以避免剥离晶片。大力检测器感测由提升销施加的力在足以脱扣的范围内 晶圆。

    Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
    38.
    发明申请
    Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage 有权
    使用具有低解离和低最小等离子体电压的电感耦合等离子体源的等离子体浸没离子注入工艺

    公开(公告)号：US20050051272A1

    公开(公告)日：2005-03-10

    申请号：US10646467

    申请日：2003-08-22

    申请人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Monroy

    发明人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Monroy

    IPC分类号： H01J37/32 ,  C23F1/00

    CPC分类号： H01J37/321 ,  H01J37/32082

    摘要： A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas which includes the species to be implanted in the surface layer of the workpiece. The method further includes generating from the process gas a plasma by inductively coupling RF source power into the processing zone from an RF source power generator through an inductively coupled RF power applicator, and applying an RF bias from an RF bias generator to the workpiece support.

    摘要翻译： 用于将离子注入工件的表面层的方法包括将工件放置在腔室中的工件支撑件上，其中表面层与腔室的天花板处于面对关系，从而在工件和天花板之间限定处理区域， 以及将包括要植入工件的表面层中的物质的工艺气体引入该室中。 该方法还包括通过将RF源功率从RF源功率发生器通过感应耦合RF功率施加器感应耦合到处理区域中，并且将来自RF偏置发生器的RF偏压施加到工件支架，从而从处理气体产生等离子体。

    Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
    40.
    发明申请
    Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer 有权
    铜导体退火工艺采用低温沉积光吸收层进行高速光学退火

    公开(公告)号：US20070032095A1

    公开(公告)日：2007-02-08

    申请号：US11199572

    申请日：2005-08-08

    申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

    发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

    IPC分类号： H01L21/00

    CPC分类号： B23K26/0738 ,  B23K26/0608 ,  B23K26/0876 ,  B23K26/361 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76886

    摘要： A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls, depositing a metal barrier layer comprising the barrier metal on the first barrier layer, depositing a main conductor species seed layer on the metal barrier layer and depositing a main conductor layer. The method further includes annealing the main conductor layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light. The method of Claim 1 further comprising, prior to the annealing step, depositing an amorphous carbon optical absorber layer on the main conductor layer. The step of depositing an amorphous carbon optical absorber layer includes introducing a carbon-containing process gas into a reactor chamber containing the substrate in a process zone of the reactor, applying RF source power to an external reentrant conduit of the reactor to generate a reentrant toroidal RF plasma current passing through the process zone and applying a bias voltage to the substrate.

    摘要翻译： 在半导体衬底上形成薄膜结构中的导体的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高方面的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层 比例开口，包括垂直侧壁，在第一阻挡层上沉积包括阻挡金属的金属阻挡层，在金属阻挡层上沉积主导体种子种子层并沉积主导体层。 该方法还包括通过以下步骤来退火主导体层：（a）将来自连续波激光器阵列的光引导到至少部分穿过薄膜结构的光线，以及（b）相对于薄的平面 薄膜结构在横向于光线的方向上。 2.根据权利要求1所述的方法，还包括在所述退火步骤之前，在所述主导体层上沉积无定形碳光吸收层。 沉积无定形碳光吸收层的步骤包括将含碳工艺气体引入反应器的反应器室中，该反应器室在反应器的工艺区域中，将RF源功率施加到反应器的外部折入导管以产生可重入环形 RF等离子体电流通过工艺区域并向衬底施加偏置电压。