摘要:
Disclosed is an image pickup device capable of greatly reducing delay in drive signals supplied to field emission devices, and cross-talk and the like that originate in these drive signals. The image pickup device comprises a photoelectric conversion film for receiving incident light on one side thereof; a field emission layer having an electron emitting surface apart from and facing the other side of the photoelectric conversion film, and including a plurality of electron emission devices; and a drive layer formed on a back side of the field emission layer and including a plurality of device drive circuits for supplying drive signals to each of back electrodes of the plurality of electron emission devices.
摘要:
An electron emission device includes an electron-supply layer formed of metal or semiconductor; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer, whereby electrons are emitted when an electric field is applied between the electron-supply layer and the thin-film metal electrode. The insulator layer and the thin-film metal electrode have at least one island-like region where the thicknesses of the insulator layer and the thin-film metal electrode gradually decrease.
摘要:
An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is made of a dielectric substance and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
摘要:
An electron emission device includes: a semiconductor layer; a porous semiconductor; and a thin-film metal electrode which are layered in turn. The electrode faces a vacuum space. The porous semiconductor layer has at least two or more of porosity-changed layers which have porosities which are different from each other in the thickness direction. The electron emission device emits electrons when an electric field is applied between the semiconductor layer and the thin-film metal electrode. An insulator layer made of a material selected from silicon oxide or silicon nitride may be formed between the porous semiconductor layer and the thin-film metal electrode. Si skeletons of the porous semiconductor layer are oxidized or nitrided.
摘要:
A magneto optical disc, is provided with: a record layer to which information is recorded in a perpendicular magnetization condition; a switch layer, which perpendicular magnetic anisotropy is reduced at a room temperature and is increased at a temperature close to a predetermined reproduction temperature; and a reproduction layer opposed to the record layer through the switch layer to have a switched connection with the record layer by the switch layer.
摘要:
An optical recording disk in which a transfer layer having grooves made of ultraviolet setting resin is laminated on the surface of a substrate, and in which a recording layer is laminated on the transfer layer, the optical recording disk comprises a peeling protrusion projectingly provided on the inner circumferential side of the transfer layer.
摘要:
According to one embodiment, a fuel cell includes a membrane electrode assembly including an anode, a cathode, and an electrolyte membrane interposed between the anode and the cathode, and an electricity-collecting member including an anode electricity collector having a first electrode member which is in contact with the anode, a cathode electricity collector having a second electrode member which is in contact with the cathode, a connection portion having a conductor which connects the anode electricity collector and the cathode electricity collector, and an insulative protection film covering at least the conductor of the connection portion.
摘要:
Disclosed is a semiconductor device eliminated of the effect of an adhesive used in assembling upon the semiconductor chip. According to the semiconductor device, the semiconductor device includes a board, a semiconductor chip provided on and contacting with the board, and a plurality of wires each having both ends firmly fixed to a point close to a peripheral edge of the semiconductor chip and a point on the board close to a peripheral edge respectively. The semiconductor chip is fixed on the board by means of the wires.
摘要:
An electron emission device including a lower electrode on a near side to a substrate and an upper electrode on a far side to the substrate and an insulator layer and an electron supply layer stacked between the lower electrode and the upper electrode and emitting an electron from the upper electrode side at the time of applying a voltage between the lower electrode and the upper electrode, which includes an electron emission part provided with an opening formed by an inner wall of a stepped shape in which a thickness of the insulator layer decreases stepwise; and a carbon-containing carbon region which is connected to the upper electrode side and which is brought into contact with the insulator layer and the electron supply layer.
摘要:
A display device has an emitting region constituted by a plurality of first electrodes provided on a substrate and extending in parallel, a plurality of second electrodes provided on the first electrodes and extending substantially perpendicularly to the first electrodes, and a plurality of emission sites for emitting electrons or light respectively connected to a plurality of intersections between the first and second electrodes and arranged on the substrate and has a peripheral region surrounding the emitting region on the substrate. In this display device, first and second groups of external repeating terminals for the first and second electrodes are collectively provided side by side in a part of the peripheral region.