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42 条记录 (耗时 0.031 秒)

    Method for Producing Direct Bonded Wafer and Direct Bonded Wafer
    34.
    发明申请
    Method for Producing Direct Bonded Wafer and Direct Bonded Wafer 有权
    生产直接粘结晶片和直接粘结晶片的方法

    公开(公告)号：US20080102603A1

    公开(公告)日：2008-05-01

    申请号：US11659283

    申请日：2005-11-29

    申请人： Norihiro Kobayashi ,  Toru Ishizuka ,  Tomohiko Ohta ,  Hiroji Aga ,  Yasuo Nagaoka

    发明人： Norihiro Kobayashi ,  Toru Ishizuka ,  Tomohiko Ohta ,  Hiroji Aga ,  Yasuo Nagaoka

    IPC分类号： H01L21/46

    CPC分类号： H01L21/2007 ,  H01L21/76254

    摘要： A method for producing a direct bonded wafer comprising: forming a thermal oxide film or a CVD oxide film on a surface of at least one of a bond wafer and a base wafer, and bonding the wafer to the other wafer via the oxide film; subsequently thinning the bond wafer to prepare a bonded wafer; and thereafter conducting a process of annealing the bonded wafer under an atmosphere including any one of an inert gas, hydrogen and a mixed gas of an inert gas and hydrogen so that the oxide film between the bond wafer and the base wafer is removed to bond the bond wafer directly to the base wafer. Thereby, there is provided a method for producing a direct bonded wafer in which generation of voids is reduced, and a direct bonded wafer with a low void count.

    摘要翻译： 一种直接接合晶片的制造方法，包括：在接合晶片和基底晶片中的至少一个的表面上形成热氧化膜或CVD氧化膜，并且经由所述氧化膜将所述晶片接合至所述另一方的晶片; 随后使接合晶片变薄以制备接合晶片; 然后在惰性气体，氢气和惰性气体与氢气的混合气体中的任何一种的气氛下进行退火接合晶片的工序，从而去除接合晶片和基底晶片之间的氧化膜， 将晶片直接接合到基底晶片。 因此，提供了一种制造空穴产生减少的直接接合晶片的方法和具有低空隙率的直接接合晶片。

    Isolated DNA encoding cullin regulators ROC1 and ROC2, isolated proteins encoded by the same, and methods utilizing the same
    35.
    发明申请
    Isolated DNA encoding cullin regulators ROC1 and ROC2, isolated proteins encoded by the same, and methods utilizing the same 失效

    公开(公告)号：US20060252098A1

    公开(公告)日：2006-11-09

    申请号：US11483907

    申请日：2006-07-10

    申请人： Yue Xiong ,  Tomohiko Ohta

    发明人： Yue Xiong ,  Tomohiko Ohta

    IPC分类号： C12P21/06 ,  C07H21/04 ,  C12N9/64 ,  C40B30/06

    CPC分类号： C07K14/4702

    摘要： The present invention provides isolated polynucleotide sequences encoding the proteins ROC1 and ROC2, the isolated proteins themselves, expression vectors containing at least a fragment of the ROC1 and ROC2 polynucleotide sequences, and host cells comprising the same. Methods of producing the ROC1 and ROC2 proteins are also disclosed, and methods of detecting the polynucleotides in samples are included in this invention, as are antibodies to the ROC1 and ROC2 proteins and antisense molecules complementary to polynucleotides encoding the same. The present invention further includes methods for screening bioactive agents that are capable of binding to a ROC protein, methods of screening bioactive agents capable of interfering with the binding of ROC proteins, and methods of screening bioactive agents capable of modulating the activity of a ROC protein. Such screening methods are capable of identifying compounds that have pharmacological. Pharmaceutical formulations comprising such pharmacologically active compounds and methods of administering the same are an additional aspect of this invention.

    Isolated DNA encoding cullin regulators ROC1 and ROC2, isolated proteins encoded by the same, and methods utilizing the same
    36.
    发明授权
    Isolated DNA encoding cullin regulators ROC1 and ROC2, isolated proteins encoded by the same, and methods utilizing the same 失效

    公开(公告)号：US07078203B1

    公开(公告)日：2006-07-18

    申请号：US09541462

    申请日：2000-03-31

    申请人： Yue Xiong ,  Tomohiko Ohta

    发明人： Yue Xiong ,  Tomohiko Ohta

    IPC分类号： C12N15/00 ,  C12N5/00 ,  C12N1/20 ,  C12P2/06 ,  C07H21/02 ,  C07H21/04 ,  C12N9/00 ,  C12N9/10 ,  C12Q1/00 ,  C12Q1/48

    CPC分类号： C07K14/4702

    摘要： The present invention provides isolated polynucleotide sequences encoding the proteins ROC1 and ROC2, the isolated proteins themselves, expression vectors containing at least a fragment of the ROC1 and ROC2 polynucleotide sequences, and host cells comprising the same. Methods of producing the ROC1 and ROC2 proteins are also disclosed, and methods of detecting the polynucleotides in samples are included in this invention, as are antibodies to the ROC1 and ROC2 proteins and antisense molecules complementary to polynucleotides encoding the same. The present invention further includes methods for screening bioactive agents that are capable of binding to a ROC protein, methods of screening bioactive agents capable of interfering with the binding of ROC proteins, and methods of screening bioactive agents capable of modulating the activity of a ROC protein. Such screening methods are capable of identifying compounds that have pharmacological. Pharmaceutical formulations comprising such pharmacologically active compounds and methods of administering the same are an additional aspect of this invention.

    Apparatus for manufacturing crystals according to the Czochralski method, and crystals manufactured by the manufacturing method
    37.
    发明授权
    Apparatus for manufacturing crystals according to the Czochralski method, and crystals manufactured by the manufacturing method 失效
    根据Czochralski方法制造晶体的装置和通过制造方法制造的晶体

    公开(公告)号：US5948163A

    公开(公告)日：1999-09-07

    申请号：US798472

    申请日：1997-02-10

    申请人： Masahiro Sakurada ,  Tomohiko Ohta

    发明人： Masahiro Sakurada ,  Tomohiko Ohta

    IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B33/02 ,  C30B35/00

    CPC分类号： C30B15/14 ,  Y10T117/10 ,  Y10T117/1032

    摘要： A crystal manufacturing apparatus includes a crucible for containing a material, a heater for heating and melting the material, and a heat insulating cylinder arranged so as to surround the crucible and the heater. The crystal manufacturing apparatus is operated in accordance with the Czochralski method. The heat insulating cylinder is arranged to be vertically movable. When two or more crystals are pulled within a single batch, the vertical position of the heat insulating cylinder is changed between the manufacture of the crystals, so that the thermal histories of the crystals are made different from one another. Moreover, when a crystal is pulled in accordance with the Czochralski method, the heat insulating cylinder is moved vertically while the crystal is being pulled.

    摘要翻译： 晶体制造装置包括用于容纳材料的坩埚，用于加热和熔化材料的加热器，以及围绕坩埚和加热器布置的绝热筒。 晶体制造装置按照Czochralski法进行操作。 绝热筒被设置为可垂直移动。 当在一批中拉出两个或多个晶体时，在制造晶体之间改变隔热圆筒的垂直位置，使得晶体的热历程彼此不同。 此外，当根据切克劳斯基法（Czochralski method）拉动晶体时，绝缘筒在被拉动晶体的同时垂直移动。

    Apparatus and method for producing crystals by the czochralski method and crystals produced by this method
    38.
    发明授权
    Apparatus and method for producing crystals by the czochralski method and crystals produced by this method 有权
    通过切克劳斯基法制造晶体的方法和通过该方法制造的晶体的方法

    公开(公告)号：US6071337A

    公开(公告)日：2000-06-06

    申请号：US125339

    申请日：1998-08-14

    申请人： Masahiro Sakurada ,  Yuichi Miyahara ,  Tomohiko Ohta

    发明人： Masahiro Sakurada ,  Yuichi Miyahara ,  Tomohiko Ohta

    IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B33/02 ,  C30B15/20

    CPC分类号： C30B15/14 ,  C30B29/06 ,  C30B29/08 ,  C30B29/40 ,  C30B29/42 ,  C30B29/44

    摘要： A method and apparatus for producing crystals by the Czochralski method whereby the thermal history during crystal growth according to the CZ method can be controlled with ease and accuracy. The apparatus comprises a crucible for receiving a raw material, a heater for heating and melting the raw material, and a heat insulating cylinder disposed so as to surround the crucible and the heater, wherein a portion of the heat insulating cylinder that is located above an upper end of the heater is so configured that its inner diameter is larger than the outer diameter of the heater at its lower end, and that its inner diameter at its upper end is equal to or less than the inner diameter of the heater while its outer diameter is equal to or greater than the outer diameter of the heater. This apparatus is used to produce crystals and to control the temperature distribution inside the crystal producing apparatus or the thermal history of crystals.

    摘要翻译： PCT No.PCT / JP97 / 00359 Sec。 371日期：1998年8月14日 102（e）日期1998年8月14日PCT 1997年2月12日提交PCT公布。 第WO97 / 30195号公报 日期1997年8月21日利用Czochralski法制造晶体的方法和装置，由此可以容易且精确地控制根据CZ方法的晶体生长期间的热历史。 该装置包括用于容纳原料的坩埚，用于加热和熔化原料的加热器，以及围绕坩埚和加热器设置的隔热圆柱体，其中绝热滚筒的位于 加热器的上端被构造成使得其内径大于其下端的加热器的外径，并且其上端的内径等于或小于加热器的内径，而其外径 直径等于或大于加热器的外径。 该装置用于生产晶体并控制晶体生成装置内的温度分布或晶体的热历史。

    Apparatus and method for the uniform distribution of crystal defects upon a silicon single crystal
    39.
    发明授权
    Apparatus and method for the uniform distribution of crystal defects upon a silicon single crystal 失效
    在硅单晶上均匀分布晶体缺陷的装置和方法

    公开(公告)号：US5704973A

    公开(公告)日：1998-01-06

    申请号：US666654

    申请日：1996-06-18

    申请人： Masahiro Sakurada ,  Wataru Sato ,  Tomohiko Ohta

    发明人： Masahiro Sakurada ,  Wataru Sato ,  Tomohiko Ohta

    IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B29/06 ,  C30B33/02 ,  H01L21/208

    CPC分类号： C30B29/06 ,  C30B15/00 ,  Y10T117/1032

    摘要： Proposed is an improvement in the method and single crystal growing chamber for the preparation of a single crystal rod of silicon by the Czochralski method, according to which the distance between the surface of the melt of silicon contained in a crucible and the lower surface of the top wall of the crystal growing chamber is equal to or larger than the diameter of the crucible and the heat-insulating cylinder surrounding the crucible containing the melt of silicon and the heater has such a height as to reach the lower surface of the top wall of the chamber so as to keep the single crystal rod under growing is kept at a temperature not lower than 700.degree. C. until reaching the lower surface of the top wall of the chamber thereby decreasing the density of the crystal defects of BMD type in the seed end of the single crystal rod as grown so that the uniformity in the distribution of BMD density is increased throughout the single crystal rod.

    摘要翻译： 提出了通过切克劳斯基法（Czochralski method）制备单晶硅的方法和单晶生长室的改进，根据该方法，坩埚中包含的硅熔体表面与坩埚的下表面之间的距离 晶体生长室的顶壁等于或大于坩埚的直径，并且包含硅和加热器的熔体的坩埚周围的隔热圆筒具有如下高度：到达顶壁的下表面 保持单晶棒生长的室保持在不低于700℃的温度，直到到达室的顶壁的下表面，从而降低种子中BMD型晶体缺陷的密度 生长的单晶棒的端部，使得在整个单晶棒中BMD密度分布的均匀性增加。

    Silicon single crystal wafer and method for producing it
    40.
    发明授权
    Silicon single crystal wafer and method for producing it 有权
    硅单晶晶片及其制造方法

    公开(公告)号：US06190452B1

    公开(公告)日：2001-02-20

    申请号：US09328278

    申请日：1999-06-08

    申请人： Masahiro Sakurada ,  Hideki Yamanaka ,  Tomohiko Ohta

    发明人： Masahiro Sakurada ,  Hideki Yamanaka ,  Tomohiko Ohta

    IPC分类号： C30B1520

    CPC分类号： C30B15/203 ,  C30B15/14 ,  C30B29/06 ,  Y10S117/917

    摘要： There is disclosed a method for producing a silicon single crystal in accordance with the Czochralski method wherein a crystal is pulled with controlling a temperature in a furnace so that &Dgr;G may be 0 or a negative value, where &Dgr;G is a difference between the temperature gradient Gc (° C./mm) at the center of a crystal and the temperature gradient Ge (° C./mm) at the circumferential portion of the crystal, namely &Dgr;G=(Ge−Gc), wherein G is a temperature gradient in the vicinity of a solid-liquid interface of a crystal from the melting point of silicon to 1400° C., and with controlling a pulling rate in a range between a pulling rate corresponding to a minimum value of the inner line of OSF region and a pulling rate corresponding to a minimum value of the outer line, when OSF region is generated in an inverted M belt shape in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a diameter of the crystal and the vertical axis represent a pulling rate. There can be provided a method of producing a silicon single crystal wafer by CZ method wherein OSF in the ring shape distribution generated when being subjected to thermal oxidation or latent nuclei of OSF is present in a low density, and neither FPD, COP, L/D, LSTD nor defect detected by Cu decoration is present under a stable manufacture condition.

    摘要翻译： 公开了根据Czochralski方法制造硅单晶的方法，其中通过控制炉中的温度拉动晶体，使得DELTAG可以为0或负值，其中DELTAG是温度梯度Gc之间的差 （℃/ mm），晶体中心的温度梯度Ge（℃C.mm），即DELTAG =（Ge-Gc），其中G是在 在从硅熔点到1400℃的晶体的固 - 液界面附近，并且控制牵引速率在对应于OSF区内线的最小值的牵引速率和牵引 对应于外线的最小值的速率，当在表示水平轴表示晶体直径和垂直轴r的缺陷分布的缺陷分布图中以倒M形带形成OSF区时 表示拉率。 可以提供通过CZ方法制造硅单晶晶片的方法，其中当经受热氧化或OSF的潜核心时产生的环形分布中的OSF以低密度存在，FPD，COP，L / 在稳定的制造条件下存在D，LSTD或Cu装饰检测到的缺陷。