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公开(公告)号:US20110155985A1
公开(公告)日:2011-06-30
申请号:US12979895
申请日:2010-12-28
申请人: Jin-Ho Oh , Jeong-Hee Park , Man-Sug Kang , Byoung-Deog Choi , Gyu-Hwan Oh , Hye-Young Park , Doo-Hwan Park
发明人: Jin-Ho Oh , Jeong-Hee Park , Man-Sug Kang , Byoung-Deog Choi , Gyu-Hwan Oh , Hye-Young Park , Doo-Hwan Park
IPC分类号: H01L45/00
CPC分类号: H01L45/1625 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1683
摘要: A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a high aspect ratio structure, and the second phase change material layer pattern may fully fill the high aspect ratio structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.
摘要翻译: 相变结构包括第一相变材料层图案和第二相变材料层图案。 第一相变材料层图案可以部分地填充高纵横比结构,并且第二相变材料层图案可以完全填充高纵横比结构。 第一相变材料层图案可以包括第一相变材料,并且第二相变材料层图案可以包括具有与第一相变材料的组成显着不同的组成的第二相变材料。
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公开(公告)号:US20060040485A1
公开(公告)日:2006-02-23
申请号:US11201421
申请日:2005-08-11
申请人: Jang-Eun Lee , Sung-Lae Cho , Jeong-Hee Park
发明人: Jang-Eun Lee , Sung-Lae Cho , Jeong-Hee Park
IPC分类号: H01L21/44
CPC分类号: H01L21/76877 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/1683
摘要: Provided are methods for forming conductive plug structures, such as via plugs, from a plurality of conductive layer patterns and methods of fabricating semiconductor devices, including semiconductor memory devices such as phase change semiconductor memory devices. An example method forms a small via structure by forming a conductive layer on a semiconductor substrate. A molding insulating layer is formed on the conductive layer and a via hole is formed through the insulating layer to expose a region of the conductive layer. A first via filling layer is formed and then partially removed to form a partial via plug. The formation and removal of the phase change material layer are then repeated as necessary to form a multilayer plug structure that substantially fills the via hole with the multilayer structure typically exhibiting reduced defects and damage than plug structures prepared by conventional methods.
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