Silicon nozzle structures and method of manufacture
    31.
    发明授权
    Silicon nozzle structures and method of manufacture 失效
    硅喷嘴结构及其制造方法

    公开(公告)号:US4733823A

    公开(公告)日:1988-03-29

    申请号:US922643

    申请日:1986-10-24

    IPC分类号: B41J2/16 A62C31/02 G01D15/18

    摘要: A nozzle structure in a crystallographically oriented, monocrystalline silicon includes a pyramidal opening anisotropically etched from the entrance side of the nozzle and truncated in a membrane having a smaller cross-section than the initial cross-section of the entrance opening. The membrane has extending therethrough a pyramidal opening etched anisotropically from the exit side. The vertical axes of both openings are substantially concentric.

    摘要翻译: 晶体学取向的单晶硅中的喷嘴结构包括从喷嘴的入口侧各向异性地蚀刻的截锥形截面,其横截面比入口的初始横截面小。 膜从其出口侧各向异性地蚀刻成金字塔形开口。 两个开口的垂直轴基本上是同心的。