公开(公告)号：US5705225A

公开(公告)日：1998-01-06

申请号：US619263

申请日：1996-03-18

申请人： Charles Dornfest ,  Fred C. Redeker ,  Mark Anthony Fodor ,  Craig Bercaw ,  H. Steven Tomozawa

发明人： Charles Dornfest ,  Fred C. Redeker ,  Mark Anthony Fodor ,  Craig Bercaw ,  H. Steven Tomozawa

IPC分类号： C25D11/18 ,  C23C16/28

CPC分类号： C25D11/18

摘要： Anodized aluminum coatings employed in semiconductor processing equipment are treated to reduce their sensitivity to halogenated species. The pores of the aluminum oxide surface can be filled either by a metal, such as magnesium or aluminum, forming the corresponding metal oxide that is resistant to reaction with halogens, or by filling the pores with a getter for halogens, such as hydrogen ions. The hydrogen ions adsorbed on the surface of the aluminum oxide react with halogens to form volatile hydrogen halides that can be pumped away in the exhaust system of the semiconductor processing chambers, thereby preventing or reducing reaction of the underlying aluminum oxide with the halogens.

摘要翻译： 对半导体加工设备中使用的阳极氧化铝涂层进行处理以降低其对卤化物质的敏感性。 氧化铝表面的孔可以由诸如镁或铝的金属填充，形成耐卤素反应的相应的金属氧化物，或者用用于卤素如氢离子的吸气剂填充孔。 吸附在氧化铝表面上的氢离子与卤素反应形成可在半导体处理室的排气系统中泵出的挥发性卤化氢，从而防止或减少下面的氧化铝与卤素的反应。