公开(公告)号：US20100018648A1

公开(公告)日：2010-01-28

申请号：US12178032

申请日：2008-07-23

申请人： KENNETH S. COLLINS ,  Douglas A. Buchberger, JR. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Hiroji Hanawa ,  Jennifer Y. Sun ,  Andrew Nguyen ,  Thorsten B. Lill ,  Meihua Shen

发明人： KENNETH S. COLLINS ,  Douglas A. Buchberger, JR. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Hiroji Hanawa ,  Jennifer Y. Sun ,  Andrew Nguyen ,  Thorsten B. Lill ,  Meihua Shen

IPC分类号： H01L21/3065

CPC分类号： H01J37/32642 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32623 ,  H01J2237/2001 ,  H01L21/6833

摘要： In an electrostatic chuck, RF bias power is separately applied to a workpiece and to a process kit collar surrounding the workpiece. At least one variable impedance element governed by a system controller adjusts the apportionment of RF bias power between the workpiece and the process kit collar, allowing dynamic adjustment of the plasma sheath electric field at the extreme edge of the workpiece, for optimum electric field uniformity under varying plasma conditions, for example.

摘要翻译： 在静电卡盘中，RF偏置功率分别施加到工件和围绕工件的处理套件套环。 由系统控制器控制的至少一个可变阻抗元件调节工件和工艺套件套环之间的RF偏置功率的分配，允许动态调整工件最末端处的等离子体护套电场，以获得最佳的电场均匀度 改变等离子体条件。

公开(公告)号：US07465478B2

公开(公告)日：2008-12-16

申请号：US11046660

申请日：2005-01-28

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

IPC分类号： C23C14/48 ,  B05D3/06 ,  H05H1/24 ,  H05H1/46 ,  H05H1/02

CPC分类号： H01J37/321 ,  H01J37/32082 ,  Y10S438/906

摘要： A method of processing a workpiece includes placing the workpiece on a workpiece support pedestal in a main chamber with a gas distribution showerhead, introducing a process gas into a remote plasma source chamber and generating a plasma in the remote plasma source chamber, transporting plasma-generated species from the remote plasma source chamber to the gas distribution showerhead so as to distribute the plasma-generated species into the main chamber through the gas distribution showerhead, and applying plasma RF power into the main chamber.

摘要翻译： 一种处理工件的方法包括将工件放置在具有气体分配喷头的主室中的工件支撑基座上，将工艺气体引入远程等离子体源室并在远程等离子体源室中产生等离子体，传输等离子体产生的 从远程等离子体源室到气体分配淋浴喷头的物质，以便通过气体分配喷头将等离子体产生的物质分配到主室中，并将等离子体RF功率施加到主室中。

公开(公告)号：US07430984B2

公开(公告)日：2008-10-07

申请号：US10285092

申请日：2002-10-30

申请人： Hiroji Hanawa ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Andrew Nguyen ,  Gonzalo Antonio Monroy

发明人： Hiroji Hanawa ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Andrew Nguyen ,  Gonzalo Antonio Monroy

IPC分类号： C23C16/00 ,  C23F1/00

CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01J37/32174

摘要： A plasma reactor for processing a workpiece, the plasma reactor comprising an enclosure, a workpiece support within the enclosure facing an overlying portion of the enclosure, the workpiece support and the overlying portion of the enclosure defining a process region therebetween extending generally across the diameter of said wafer support, the enclosure having a first and second pairs of openings therethrough, the two openings of each of the first and second pairs being near generally opposite sides of said workpiece support, a first hollow conduit outside of the process region and connected to the first pair of openings, providing a first torroidal path extending through the conduit and across the process region, a second hollow conduit outside of the process region and connected to the second pair of openings, providing a second torroidal path extending through the conduit and across the process region, first and second plasma source power applicators inductively coupled to the interiors of the first and second hollow conduits, respectively, each of the first and second plasma source power applicators being capable of maintaining a plasma in a respective one of the first and second torroidal paths, an RF power generator providing an RF output current, a current switching network connected between the RF power generator and the first and second plasma source power applicators for applying respective periodic time segments of RF output current to respective ones of said first and second plasma source power applicators.

摘要翻译： 一种用于处理工件的等离子体反应器，所述等离子体反应器包括外壳，所述外壳内的工件支撑件面向所述外壳的上部，所述工件支撑件和所述外壳的上部部分限定了其间的工艺区域， 所述晶片支撑件，所述外壳具有穿过其中的第一和第二对开口，所述第一和第二对中的每一个的两个开口靠近所述工件支撑件的大致相对的两侧，在所述工艺区域外部并连接到所述工件区域的第一中空导管 第一对开口，提供延伸穿过导管并跨过处理区域的第一环形路径，在处理区域外部的第二中空导管，并连接到第二对开口，提供延伸穿过导管并跨过管道的第二环形路径 工艺区域，第一和第二等离子体源功率施加器电感耦合到 第一和第二空心管道的裂口分别地，第一和第二等离子体源功率施加器中的每一个能够维持第一和第二环形路径中的相应一个中的等离子体，提供RF输出电流的RF发电机， 连接在RF功率发生器和第一和第二等离子体源功率施加器之间的电流开关网络，用于将RF输出电流的相应的周期性时间段施加到所述第一和第二等离子体源功率施加器中的相应的等离子体源功率施加器。

公开(公告)号：US07294563B2

公开(公告)日：2007-11-13

申请号：US11002965

申请日：2004-12-01

申请人： Amir Al-Bayati ,  Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

发明人： Amir Al-Bayati ,  Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC分类号： H01L21/44

CPC分类号： H01J37/321 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7843 ,  H01L29/785 ,  H01L29/78618

摘要： A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.

摘要翻译： 通过绝缘体上半导体结构中的三维垂直晶体管的垂直和水平表面进行保形掺杂的工艺采用RF振荡环形等离子体电流来执行保形离子注入或含掺杂剂膜的共形沉积 然后可以加热以将掺杂剂驱动到晶体管中。 一些实施例采用包含掺杂剂的膜的共形离子注入和共形沉积，并且在其中含掺杂剂的膜是纯掺杂剂的那些实施例中，可以同时执行离子注入和膜沉积。

公开(公告)号：US07291360B2

公开(公告)日：2007-11-06

申请号：US10873600

申请日：2004-06-22

申请人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

发明人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

IPC分类号： C23C16/00 ,  H05H1/24

CPC分类号： C23C16/452 ,  C23C16/402 ,  C23C16/517

摘要： A chemical vapor deposition process is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, each orifice being oriented in a non-parallel direction relative to a surface plane of the respective ion shower grid. A workpiece is placed in the process region, so that a workpiece surface of the workpiece is generally facing a surface plane of the nearest one of the ion shower grids, and a gas mixture comprising a deposition precursor species is furnished into the ion generation region. The process region is evacuated at an evacuation rate sufficient to create a pressure drop across the plural ion shower grids between the ion generation and process regions whereby the pressure in the ion generation region is several times the pressure in the process region. The process further includes applying plasma source power to generate a plasma of the deposition precursor species in the ion generation region and applying successive grid potentials to successive ones of the grids.

摘要翻译： 化学气相沉积工艺在具有一组多个并联离子淋浴网格的反应室中进行，该平行离子淋浴网将腔室分成上部离子产生区域和下部处理区域，每个离子淋浴网格具有相互配准的多个孔口 网格到网格，每个孔口相对于相应的离子喷淋网格的表面平行于非平行方向。 将工件放置在工艺区域中，使得工件的工件表面通常面向最接近的一个离子淋浴栅格的表面，并且将包含沉积前体物质的气体混合物配备到离子产生区域中。 处理区域以足以在离子产生和处理区域之间的多个离子淋浴栅格之间产生压降的抽空速率抽真空，由此离子产生区域中的压力是处理区域中压力的几倍。 该方法还包括施加等离子体源功率以在离子产生区域中产生沉积前体物质的等离子体，并将连续的栅格电势施加到连续的栅极。

公开(公告)号：US07223676B2

公开(公告)日：2007-05-29

申请号：US10838052

申请日：2004-05-03

申请人： Hiroji Hanawa ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Biagio Gallo ,  Andrew Nguyen

发明人： Hiroji Hanawa ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Biagio Gallo ,  Andrew Nguyen

IPC分类号： H01L21/44 ,  H01L21/425

CPC分类号： H01L21/02274 ,  C23C14/48 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32357 ,  H01J37/32412 ,  H01J2237/2001 ,  H01L21/02126 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/6659 ,  Y10T29/5313

摘要： A low temperature process for depositing a coating containing any of silicon, nitrogen, hydrogen or oxygen on a workpiece includes placing the workpiece in a reactor chamber facing a processing region of the chamber, introducing a process gas containing any of silicon, nitrogen, hydrogen or oxygen into the reactor chamber, generating a torroidal RF plasma current in a reentrant path through the processing region by applying RF plasma source power at an HF frequency on the order of about 10 MHz to a portion of a reentrant conduit external of the chamber and forming a portion of the reentrant path, applying RF plasma bias power at an LF frequency on the order of one or a few MHz to the workpiece, and maintaining the temperature of the workpiece under about 100 degrees C.

摘要翻译： 用于在工件上沉积含有硅，氮，氢或氧中的任何一种的涂层的低温方法包括将工件放置在面向腔室的处理区域的反应器室中，引入含有硅，氮，氢或任何硅， 氧气进入反应器室，通过将RF等离子体源功率施加在大约10MHz量级的HF频率处的RF等离子体源功率在腔室外部的折返导管的一部分上，形成通过处理区域的折返路径中的环形RF等离子体电流，并形成 可折回路径的一部分，将RF等离子体偏置功率施加到工件的一个或几MHz量级的LF频率上，并将工件的温度保持在约100摄氏度。

公开(公告)号：US07094670B2

公开(公告)日：2006-08-22

申请号：US11046661

申请日：2005-01-28

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

IPC分类号： H01L21/42 ,  H01L21/425 ,  H01L21/205

CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01L21/67109 ,  H01L21/6831

摘要： A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, includes placing the workpiece on a workpiece support in the chamber, controlling a temperature of the wafer support near a constant level, performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma while minimizing deposition and minimizing etching by holding the temperature of the workpiece within a temperature range that is above a workpiece deposition threshold temperature and below a workpiece etch threshold temperature.

摘要翻译： 在等离子体反应器室中对工件进行等离子体浸没离子注入的方法包括将工件放置在腔室中的工件支撑件上，将晶片支架的温度控制在恒定水平附近，通过在工件上进行等离子体浸没离子注入 将植入物种前体气体引入室中并产生等离子体，同时使沉积最小化并且通过将工件的温度保持在高于工件沉积阈值温度并低于工件蚀刻阈值温度的温度范围内来最小化蚀刻。

公开(公告)号：US07695590B2

公开(公告)日：2010-04-13

申请号：US10873463

申请日：2004-06-22

申请人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

发明人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/505 ,  C23C16/48 ,  C23F1/12 ,  H01L21/3065 ,  C23C16/06

CPC分类号： H01J37/32449 ,  C23C14/358 ,  C23C16/045 ,  C23C16/507 ,  H01J37/32357

摘要： A plasma reactor for processing a semiconductor workpiece includes a reactor chamber and a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower reactor region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, each orifice being oriented in a non-parallel direction relative to a surface plane of the respective ion shower grid. A workpiece support in the process region faces the lowermost one of the ion shower grids. A reactive species source furnishes into the ion generation region a chemical vapor deposition precursor species. The reactor further includes a vacuum pump coupled to the reactor region, a plasma source power applicator for generating a plasma in the ion generation region and a grid potential source coupled to the set of ion shower grids. The orifices through at least some of the ion shower grids have an aspect ratio sufficient to limit ion trajectories in the reactor region to a narrow angular range about the non-parallel direction, and a resistance to gas flow sufficient to support a pressure drop between the ion generation and reactor regions of about at least a factor of 4. The grid potential source can be capable of applying different voltages to different ones of the grids.

摘要翻译： 一种用于加工半导体工件的等离子体反应器包括反应室和一组多个并联离子淋浴网格，其将腔室分成上部离子产生区域和下部反应器区域，每个离子淋浴器网格具有相互配准的多个孔口 网格到网格，每个孔口相对于相应的离子喷淋网格的表面平行于非平行方向。 工艺区域中的工件支撑面向最下面的离子淋浴网格。 反应物种源向离子产生区域提供化学气相沉积前体物质。 反应器还包括耦合到反应器区域的真空泵，用于在离子产生区域中产生等离子体的等离子体源功率施加器和耦合到该组离子淋浴栅格的栅极电位源。 通过至少一些离子淋浴栅格的孔口具有足以将反应器区域中的离子轨迹限制在围绕非平行方向的窄角度范围的宽高比，以及足以支持压力降 离子产生和反应器区域至少约为4倍。电网电势源能够对不同的电网施加不同的电压。

公开(公告)号：US07552736B2

公开(公告)日：2009-06-30

申请号：US11685775

申请日：2007-03-14

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC分类号： C25F1/00 ,  C25F3/30 ,  C25F5/00

CPC分类号： H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

摘要： A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving at least a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the wafer front side and a lower process zone containing the wafer backside. The process also includes providing a polymer etch precursor gas underneath the backside edge of the workpiece and applying RF power to a region underlying the backside edge of the workpiece to generate a first plasma of polymer etch species concentrated in an annular ring concentric with and underneath the backside edge of the workpiece.

摘要翻译： 提供了从工件的背面除去聚合物的方法。 该方法包括在真空室的背面支撑工件，同时至少留下背面的周边环形部分。 该方法还包括将工件边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含晶片前端的上工艺区域之间的边界 侧面和下部工艺区域，其中包含晶片背面。 该方法还包括在工件的后边缘下方提供聚合物蚀刻前体气体，并将RF功率施加到工件的后边缘下方的区域，以产生聚集在一起的聚合物蚀刻物质等离子体 工件的后边缘。

公开(公告)号：US20080179290A1

公开(公告)日：2008-07-31

申请号：US11685915

申请日：2007-03-14

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC分类号： C23F1/00

CPC分类号： H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

摘要： A workpiece is supported on the backside in a vacuum chamber while leaving at least a peripheral annular portion of a backside of the workpiece exposed. The process first increases the temperature of the workpiece starting at a temperature below about 200 degrees C. The edge of the workpiece is confined so as to establish a gap at the edge on the order of about 1% of the diameter of the chamber, the gap corresponding to a boundary between an upper process zone containing the front side and a lower process zone containing the backside. Before the workpiece temperature exceeds about 200 degrees C., backside polymer is removed using a first plasma containing polymer etch species in the lower process zone. After the workpiece temperature reaches about 300 degrees C., photoresist is stripped from the workpiece front side using by-products of a second plasma containing a photoresist strip species in the upper process zone.

摘要翻译： 工件被支撑在真空室的背面，同时留下工件的后侧的周边环形部分露出。 该过程首先在低于约200℃的温度下开始增加工件的温度。工件的边缘被限制以便在边缘处建立约1％直径的间隙， 间隙对应于包含前侧的上处理区域和包含背面的下处理区域之间的边界。 在工件温度超过约200℃之前，使用在较低工艺区域中的含有聚合物蚀刻物质的第一等离子体来去除背面聚合物。 在工件温度达到约300摄氏度之后，使用在上工艺区域中含有光刻带材料的第二等离子体的副产品从工件正面剥离光致抗蚀剂。