利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

67 条记录 (耗时 0.032 秒)

    Supercritical drying method for semiconductor substrate
    31.
    发明授权
    Supercritical drying method for semiconductor substrate 有权
    半导体衬底的超临界干燥方法

    公开(公告)号：US09437416B2

    公开(公告)日：2016-09-06

    申请号：US13231956

    申请日：2011-09-13

    申请人： Hidekazu Hayashi ,  Hiroshi Tomita ,  Yukiko Kitajima ,  Hisashi Okuchi ,  Yohei Sato

    发明人： Hidekazu Hayashi ,  Hiroshi Tomita ,  Yukiko Kitajima ,  Hisashi Okuchi ,  Yohei Sato

    IPC分类号： F26B3/00 ,  H01L21/02 ,  H01L21/67

    CPC分类号： H01L21/02101 ,  H01L21/02068 ,  H01L21/67017 ,  H01L21/67034

    摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate includes introducing a semiconductor substrate formed with a metal film into a chamber, the surface of the substrate being wet with alcohol, supplying a supercritical fluid of carbon dioxide into the chamber, setting a temperature inside the chamber to a predetermined temperature, to replace the alcohol on the semiconductor substrate with the supercritical fluid, and discharging the supercritical fluid and the alcohol from the chamber while keeping the temperature inside the chamber at the predetermined temperature, to lower a pressure inside the chamber. The predetermined temperature is not lower than 75° C. but lower than a critical temperature of the alcohol.

    摘要翻译： 根据一个实施例，半导体衬底的超临界干燥方法包括将形成有金属膜的半导体衬底引入腔室中，基底表面被醇润湿，将二氧化碳的超临界流体供应到腔室中， 在室内温度达到预定温度，用超临界流体替代半导体衬底上的醇，并且将超临界流体和醇从室中排出，同时将室内的温度保持在预定温度，以降低内部的压力 房间。 预定温度不低于75℃，但低于醇的临界温度。

    Antireflection film, optical element comprising antireflection film, stamper, process for producing stamper, and process for producing antireflection film
    33.
    发明授权
    Antireflection film, optical element comprising antireflection film, stamper, process for producing stamper, and process for producing antireflection film 有权
    防反射膜，包括抗反射膜，压模的光学元件，用于制造压模的工艺，以及制造抗反射膜的工艺

    公开(公告)号：US08758589B2

    公开(公告)日：2014-06-24

    申请号：US12992705

    申请日：2009-06-04

    申请人： Hidekazu Hayashi ,  Tokio Taguchi ,  Akiyoshi Fujii ,  Nobuaki Yamada

    发明人： Hidekazu Hayashi ,  Tokio Taguchi ,  Akiyoshi Fujii ,  Nobuaki Yamada

    IPC分类号： C25D11/12 ,  C25D11/24 ,  G02B1/11

    CPC分类号： G02B1/118 ,  C25D11/12 ,  G02B5/0215

    摘要： An antireflection film of the present invention includes a plurality of first raised portions, each of which has a two-dimensional size of not less than 1 μm and less than 100 μm when seen in a direction normal to the film, and a plurality of second raised portions, each of which has a two-dimensional size of not less than 10 nm and less than 500 nm when seen in a direction normal to the film. In at least one embodiment, the antireflection film has a first surface shape or a second surface shape that is inverse to the first surface shape relative to a film surface. In the first surface shape, the second raised portions are provided on the first raised portions and between the plurality of first raised portions, and the elevation angle α of a surface of the first raised portions relative to the film surface is about 90° or more. The antireflection film of the present invention has a more excellent antiglare function than conventional ones.

    摘要翻译： 本发明的抗反射膜包括多个第一凸起部分，当沿垂直于膜的方向观察时，其具有不小于1μm且小于100μm的二维尺寸，并且多个第二凸起部分 凸起部分，当沿垂直于膜的方向观察时，其各自具有不小于10nm且小于500nm的二维尺寸。 在至少一个实施例中，抗反射膜具有相对于膜表面与第一表面形状相反的第一表面形状或第二表面形状。 在第一表面形状中，第二凸起部分设置在第一凸起部分和多个第一凸起部分之间，并且第一凸起部分相对于膜表面的表面的仰角α为约90°或更大 。 本发明的防反射膜具有比常规的更好的防眩光功能。

    Tool batteries
    35.
    发明授权
    Tool batteries 有权
    工具电池

    公开(公告)号：US08563163B2

    公开(公告)日：2013-10-22

    申请号：US13207767

    申请日：2011-08-11

    申请人： Hidekazu Hayashi ,  Eiji Kondo ,  Hironori Ogura ,  Hideyuki Taga

    发明人： Hidekazu Hayashi ,  Eiji Kondo ,  Hironori Ogura ,  Hideyuki Taga

    IPC分类号： H01M2/00

    CPC分类号： H01M2/1055 ,  H01M2/1022

    摘要： A battery housing of a tool battery has a hook accommodation chamber and a battery cell accommodation chamber defined therein. A hook is accommodated within the hook accommodation chamber and is operable to lock and unlock the tool battery against a tool body of a power tool. Battery cells are disposed within the battery cell accommodation chamber. The hook accommodation chamber and the battery cell accommodation chamber are partitioned from each other.

    摘要翻译： 工具电池的电池壳体具有限定在其中的钩住宿室和电池单元容纳室。 钩子容纳在钩容纳室内并且可操作以将工具电池锁定和解锁抵靠电动工具的工具主体。 电池单元设置在电池单元容纳室内。 钩住宿室和电池单元容纳室彼此分隔开。

    Supercritical drying method and apparatus for semiconductor substrates
    36.
    发明授权
    Supercritical drying method and apparatus for semiconductor substrates 有权
    半导体衬底的超临界干燥方法和装置

    公开(公告)号：US08372212B2

    公开(公告)日：2013-02-12

    申请号：US13369970

    申请日：2012-02-09

    申请人： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

    发明人： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

    IPC分类号： B08B3/04

    CPC分类号： F26B3/02

    摘要： According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.

    摘要翻译： 根据一个实施方案，超临界干燥方法包括用化学溶液清洗半导体衬底，在清洁之后用纯水冲洗半导体衬底，通过供应醇将覆盖半导体衬底的表面的液体从纯水改变为醇 在冲洗后的表面上引导具有被醇润湿的表面的半导体衬底进入腔室，通过向室中供应惰性气体从室中排出氧气，通过增加室中的温度将醇置于超临界状态 醇的临界温度或排出氧后的较高温度，并且通过降低室中的压力并将醇从超临界状态改变为气态，从室中排出醇。 房间包含SUS。 对室的内壁面进行电解抛光。

    MOLD RELEASE TREATMENT METHOD, MOLD, METHOD FOR PRODUCING ANTI-REFLECTIVE FILM, MOLD RELEASE TREATMENT DEVICE, AND WASHING/DRYING DEVICE FOR MOLD
    37.
    发明申请
    MOLD RELEASE TREATMENT METHOD, MOLD, METHOD FOR PRODUCING ANTI-REFLECTIVE FILM, MOLD RELEASE TREATMENT DEVICE, AND WASHING/DRYING DEVICE FOR MOLD 有权
    模具释放处理方法，模具，生产防反射膜的方法，模具释放处理装置和用于模具的洗涤/干燥装置

    公开(公告)号：US20120308678A1

    公开(公告)日：2012-12-06

    申请号：US13579094

    申请日：2011-03-07

    申请人： Hidekazu Hayashi ,  Takao Imaoku

    发明人： Hidekazu Hayashi ,  Takao Imaoku

    IPC分类号： B28B7/38 ,  B08B5/02 ,  B08B3/02 ,  G02B1/12 ,  B05B7/00

    CPC分类号： B29C33/58 ,  B29C33/60

    摘要： A mold release treatment method of the present invention includes: the step of providing a mold releasing agent and a mold which has a porous alumina layer over its surface, the mold releasing agent containing a fluoric compound which has mold releasability and a solvent; the step of applying over the surface of the mold a solvent that is capable of dissolving the fluoric compound; and thereafter, the step of applying the mold releasing agent over the surface of the mold according to a spray coating method. According to the present invention, a mold release treatment can be performed over a surface of the mold which has the porous alumina layer over its surface, without causing uneven application.

    摘要翻译： 本发明的脱模处理方法包括：提供脱模剂和在其表面上具有多孔氧化铝层的模具的步骤，脱模剂含有具有脱模性的氟化合物和溶剂; 在模具的表面上施加能够溶解氟化合物的溶剂的步骤; 然后，按照喷涂法将脱模剂涂布在模具的表面上的工序。 根据本发明，可以在其表面上具有多孔氧化铝层的模具的表面上进行脱模处理，而不会引起不均匀的应用。